Sébastien Plissard
2025
[67]. Data-driven Azimuthal RHEED construction for in-situ crystal growth characterization
A. Khaireh-Walieh, A. Arnoult, S. Plissard, P.R. Wiecha
Submitted
[66]. Self-assembled GaAs quantum dashes for direct alignment of liquid crystals on a III–V semiconductor surface
H. Villanti, S. Plissard , J.-B. Doucet, A. Arnoult, V. Bardinal
Appl. Phys. Express 18, 027001 (2025)
2024
[65]. Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs(111)A
M.A. Khaled, L. Cancellara, S. Fekraoui, R. Daubriac, F. Bertran, C. Bigi, Q. Gravelier, R. Monflier, A. Arnoult, C. Durand, S.R. Plissard
ACS Appl. Electron. Mater. 6(5), 3771–3779 (2024)
2023
[64]. Growth of BiSb on GaAs (001) and (111)A surfaces: A joint experimental and theoretical study
D. Sadek, A. Jay, J. El Hila, Q. Gravelier, A. Arnoult, R. Demoulin, F. Cristiano, S. Plissard, A. Hémeryck
Applied Surface Science 622, 156688 (2023)
[63]. Monitoring MBE substrate deoxidation via RHEED Image-Sequence Analysis by Deep Learning
A. Khaireh-Walieh, A. Arnoult, S. Plissard, Peter R. Wiecha
Crystal Growth & Design 23(2), 892–898 (2023)
2022
[62]. Self-catalyzed InAs nanowires grown on Si: the key role of kinetics on their morphology
D.S. Dhungana, N. Mallet, P.-F. Fazzini, G. Larrieu, F. Cristiano, S. Plissard
Nanotechnology 33, 485601 (2022)
[61]. Structural and Electrical Characterizations of BiSb TI Layers Epitaxially Integrated on GaAs
D. Sadek, R. Daubriac, C. Durand, R. Monflier, Q. Gravelier, A. Proietti, F. Cristiano, A. Arnoult, S.R. Plissard
Crystal Growth & Design 22, 5081-5091 (2022)
2021
[60]. Integration of the Rhombohedral BiSb Topological Insulator on a Cubic GaAs Substrate
D. Sadek, D.S. Dhungana, R. Coratger, C. Durand, A. Proietti, Q. Gravelier, B. Reig, E. Daran, P.F. Fazzini, F. Cristiano, A. Arnoult, S.R. Plissard
ACS Appl. Mater. Interfaces 13, 36492−36498 (2021)
2020
[59]. Erasing odd-parity states in semiconductor quantum dots coupled to superconductor
Z. Su, R. Žitko, P. Zhang, H. Wu, D. Car, S. R. Plissard, S. Gazibegovic, G. Badawy, M. Hocevar,J. Chen, E. P. A. M. Bakkers, S. M. Frolov
Phys. Rev. B 101, 235315 (2020).
2019
[58]. Iuliacumite: A Novel Chemical Short-Range Order in a Two-Dimensional Wurtzite Single Monolayer InAs1–xSbx Shell on InAs Nanowire
M. Schnedler, T. Xu, I. Lefebvre, J.-P. Nys, S.R. Plissard, M. Berthe, H. Eisele, R.E. Dunin-Borkowski, Ph. Ebert, B. Grandidier
Nano Letters 19(12), 8801-8805 (2019).
[57]. Ubiquitous Non-Majorana Zero-Bias Conductance Peaks in Nanowire Devices
J. Chen, B.D. Woods, P. Yu, M. Hocevar, D. Car, S.R. Plissard, E.P.A.M. Bakkers, T.D. Stanescu, S.M. Frolov
Physical Review Letters 123, 107703 (2019).
[56]. Magnetic-Field-Resilient Superconducting Coplanar-Waveguide Resonators for Hybrid Circuit Quantum Electrodynamics Experiments
J.G. Kroll, F. Borsoi, K.L. van der Enden, W. Uilhoorn, D. de Jong, M. Quintero-Pérez,D.J. van Woerkom, A. Bruno, S.R. Plissard, D. Car, E.P.A.M. Bakkers, M.C. Cassidy, L.P. Kouwenhoven
Physical Review Applied 11, 064053 (2019).
[55]. Importance of point defect reactions for the atomic-scale roughness of III–V nanowire sidewalls
A.D. Álvarez, N. Peric, N.A.F. Vergel, J.-P. Nys, M. Berthe, G. Patriarche, J.-C. Harmand,P. Caroff, S. Plissard, P. Ebert, T. Xu, B. Grandidier
Nanotechnology 30, 324002 (2019).
[54]. Spin-orbit protection of induced superconductivity in Majorana nanowires
J.D.S. Bommer, H. Zhang, Ö. Gül, B. Nijholt, M. Wimmer, F.N. Rybakov, J. Garaud, D. Rodic, E. Babaev, M. Troyer, D. Car, S.R. Plissard, E.P.A.M. Bakkers, K. Watanabe, T. Taniguchi, L.P. Kouwenhoven
Physical Review Letters 122, 187702 (2019).
[53]. Composition modulation by twinning in InAsSb nanowires
M. Schnedler, T. Xu, V. Portz, J.-P. Nys, S.R. Plissard, M. Berthe, H. Eisele,R.E. Dunin-Borkowski, Ph. Ebert, B. Grandidier
Nanotechnology 30, 324005, (2019).
[52]. Insight of surface treatments for CMOS compatibility of InAs nanowires
D.S. Dhungana, A. Hemeryck, N. Sartori, P.-F. Fazzini, F. Cristiano, S.R. Plissard
Nano Research 12(3), 581-586 (2019).
2018
[51]. Mirage Andreev Spectra Generated by Mesoscopic Leads in Nanowire Quantum Dots
Z. Su, A. Zarassi, J.-F. Hsu, P. San-Jose, E. Prada, R. Aguado, E.J.H. Lee, S. Gazibegovic,R.L.M. Op het Veld, D. Car, S.R. Plissard, M. Hocevar, M. Pendharkar, J. S. Lee, J.A. Logan, C.J. Palmstrøm, E.P.A.M. Bakkers, S.M. Frolov
Physical Review Letters 121, 127705 (2018).
[50]. Split-Channel Ballistic Transport in an InSb Nanowire
J.C. Estrada Saldaña, Y.-M. Niquet, J.-P. Cleuziou, E.J.H. Lee, D. Car, S.R. Plissard, E.P.A.M. Bakkers,S. De Franceschi
Nano Letters 18(4), 2282-2287 (2018).
[49]. Ballistic Majorana nanowire devices
Ö. Gül, H. Zhang, J.D.S. Bommer, M.W.A. de Moor, D. Car, S.R. Plissard, E.P.A.M. Bakkers, A. Geresdi, K. Watanabe, T. Taniguchi L.P. Kouwenhoven
Nature Nanotechnology 13, 192-197 (2018).
2017
[48]. Supercurrent Interference in Few-Mode Nanowire Josephson Junctions
K. Zuo, V. Mourik, D.B. Szombati, B. Nijholt, D.J. van Woerkom, A. Geresdi, J. Chen, V.P. Ostroukh, A.R. Akhmerov, S.R. Plissard, D. Car, E.P.A.M. Bakkers, D.I. Pikulin, L.P. Kouwenhoven, S.M. Frolov
Physical Review Letters 119, 187704 (2017).
[47]. Observation of Conductance Quantization in InSb Nanowire Networks
E.M.T. Fadaly, H. Zhang, S. Conesa-Boj, D. Car, Ö. Gül, S.R. Plissard, R.L.M. Op het Veld, S. Kölling, L.P. Kouwenhoven, E.P.A.M. Bakkers
Nano Letters 17, 6511-6515 (2017).
[46]. Andreev molecules in semiconductor nanowire double quantum dots
Z. Su, A.B. Tacla, M. Hocevar, D. Car, S.R. Plissard, E.P.A.M. Bakkers, A.J. Daley, D. Pekker, S.M. Frolov
Nature Communications 8, 585 (2017).
[45]. Josephson radiation and shot noise of a semiconductor nanowire junction
D.J. van Woerkom, A. Proutski, R.J.J. van Gulik, T. Kriváchy, D. Car, S.R. Plissard, E.P.A.M. Bakkers, L.P. Kouwenhoven, A. Geresdi
Physical Review B 96, 094508 (2017).
[44]. Experimental phase diagram of zero-bias conductance peaks in superconductor/semiconductor nanowire devices
J. Chen,P. Yu, J. Stenger, M. Hocevar, D. Car, S.R. Plissard, E.P.A.M. Bakkers, T.D. Stanescu, S.M. Frolov
Science Advances 3(9), e1701476 (2017).
[43]. Conductance through a helical state in an indium antimonide nanowire
J. Kammhuber, M.C. Cassidy, F. Pei, M.P. Nowak, A. Vuik, Ö. Gül, D. Car, S.R. Plissard, E.P.A.M. Bakkers, M. Wimmer, L.P. Kouwenhoven
Nature Communications 8, 478 (2017).
[42]. Ballistic superconductivity in semiconductor nanowires
H. Zhang, Ö. Gül, S. Conesa-Boj, M.P. Nowak, M. Wimmer, K. Zuo, V. Mourik, F.K. de Vries, J. van Veen, M.W.A. de Moor, J.D.S. Bommer, D.J. van Woerkom, D. Car, S.R. Plissard, E.P.A.M. Bakkers, M. Quintero-Pérez, M.C. Cassidy, S. Koelling, S. Goswami, K. Watanabe, T. Taniguchi, L.P. Kouwenhoven
Nature Communications 8, 16025 (2017).
[41]. Hard Superconducting Gap in InSb Nanowires
Ö. Gül, H. Zhang, F.K. de Vries, J. van Veen, K. Zuo, V. Mourik, S. Conesa-Boj, M.P. Nowak, D.J. van Woerkom, M. Quintero-Pérez, M.C. Cassidy, A. Geresdi, S. Koelling, D. Car, S.R. Plissard, E.P.A.M. Bakkers, L.P. Kouwenhoven
Nano Letters 17(4), 2690-2696 (2017).
[40]. InSb Nanowires with Built-In GaxIn1–xSb Tunnel Barriers for Majorana Devices
D. Car, S. Conesa-Boj, H. Zhang, R.L.M. Op het Veld, M.W.A. de Moor, E.M.T. Fadaly, Ö. Gül, S. Kölling,S.R. Plissard, V. Toresen, M.T. Wimmer, K. Watanabe, T. Taniguchi, L.P. Kouwenhoven, E.P.A.M. Bakkers
Nano Letters 17(2), 721-727 (2017).
2016
[39]. Revealing the band structure of InSb NWs by high-field magnetotransport in the quasiballistic regime
F. Vigneau, Ö. Gül, Y.-M. Niquet, D. Car, S.R. Plissard, W. Escoffier, E.P.A.M. Bakkers, I. Duchemin,B. Raquet, M. Goiran
Physical Review B 94, 235303 (2016).
[38]. Lazarevicite-type short-range ordering in ternary III-V nanowires
M. Schnedler, I. Lefebvre, T. Xu, V. Portz, G. Patriarche, J.P. Nys, S.R. Plissard, P. Caroff, M. Berthe,H. Eisele, R.E. Dunin-Borkowski, Ph. Ebert, B. Grandidier
Physical Review B 94, 195306 (2016).
[37]. Influence of growth conditions on the performance of InP nanowire solar cells
A. Cavalli, Y. Cui, S. Kölling, M.A. Verheijen, S.R. Plissard, J. Wang, P.M. Koenraad, J.E.M. Haverkort, E.P.A.M. Bakkers
Nanotechnology 27(45), 454003 (2016).
[36]. Conductance Quantization at Zero Magnetic Field in InSb Nanowires
J. Kammhuber, M.C. Cassidy, H. Zhang, Ö. Gül, F. Pei, M.W.A. de Moor, B. Nijholt, K. Watanabe, T. Taniguchi,D. Car, S.R. Plissard, E.P.A.M. Bakkers, L.P. Kouwenhoven
Nano Letters 16(6), 3482-3486 (2016).
[35]. Josephson ϕ0-junction in nanowire quantum dots
D.B. Szombati, S. Nadj-Perge, D. Car, S.R. Plissard, E.P.A.M. Bakkers, L.P. Kouwenhoven
Nature Physics 12, 568-572 (2016).
[34]. High-Yield Growth and Characterization of <100> InP p−n Diode
A. Cavalli, J. Wang, I.E. Zadeh, M.E. Reimer, M.A. Verheijen, M. Soini,S.R. Plissard, V. Zwiller, J.E.M. Haverkort, E.P.A.M. Bakkers
Nano Letters 16(5), 3071-3077 (2016).
[33]. Twin-Induced InSb Nanosails: A Convenient High Mobility Quantum System
M. de la Mata, R. Leturcq, S.R. Plissard, C. Rolland, C. Magén, J. Arbiol, P. Caroff
Nano Letters 16(2), 825-833 (2016).
2015
[32]. Exploring Crystal Phase Switching in GaP Nanowires
S. Assali, L. Gagliano, D.S. Oliveira, M.A. Verheijen, S.R. Plissard, L.F. Feiner, E. P. A. M. Bakkers
Nano Letters 15(12), 8062-8069 (2015).
[31]. Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires
T. Xu, M.J. Wei, P. Capiod, A. Díaz Álvarez, X.L. Han, D. Troadec, J.P. Nys, M. Berthe, I. Lefebvre, G. Patriarche, S.R. Plissard, P. Caroff, Ph. Ebert, B. Grandidier
Applied Physics Letters 107, 112102 (2015).
[30]. Realization of microwave quantum circuits using hybrid superconducting-semiconducting nanowire Josephson element
G. de Lange, B. van Heck, A. Bruno, D.J. van Woerkom, A. Geresdi, S.R. Plissard, E.P.A.M. Bakkers, A.R. Akhmerov, L. DiCarlo
Physical Review Letters 115, 127002 (2015).
[29]. Self-equilibration of the diameter of Ga-catalyzed GaAs nanowires
V.G. Dubrovskii, T. Xu, A. Díaz Álvarez, S.R. Plissard, P. Caroff, F. Glas, B. Grandidier
Nano Letters 15(8), 5580-5584 (2015).
[28]. Spin-Orbit interaction in InSb
I. van Weperen, B. Tarasinski, D. Eeltink, V.S. Pribiag, S.R. Plissard, E.P.A.M. Bakkers, L.P. Kouwenhoven, M. Wimmer
Physical Review B 91, 201413(R) (2015).
[27]. Toward high mobility InSb nanowire devices
Ö. Gül, D.J. van Woerkom, I. van Weperen, D. Car, S.R. Plissard, E.P.A.M. Bakkers, L.P. Kouwenhoven
Nanotechnology 26, 215202 (2015).
2014
[26]. Rationally designed single-crystalline nanowire networks
D. Car, J. Wang, M.A. Verheijen, E.P.A.M. Bakkers, S.R. Plissard
Advanced Materials 26(28), 4875-4879 (2014).
[25]. Gold-free ternary III–V antimonide nanowire arrays on silicon: Twin-free down to the first bilayer
S. Conesa-Boj, D. Kriegner, X.-L. Han, S.R. Plissard, X. Wallart, J. Stangl, A.F.I. Morral, P. Caroff
Nano Letters 14(1), 326-332 (2014).
2013
[24]. Formation and electronic properties of InSb nanocrosses
S.R. Plissard, I. van Weperen, D. Car, M.A. Verheijen, G.W.G. Immink, J. Kammhuber, L.J. Cornelissen, D.B. Szombati, A. Geresdi, S.M. Frolov, L.P. Kouwenhoven, E.P.A.M. Bakkers
Nature Nanotechnology 8, 859-864 (2013).
[23]. Quantum computing based on semiconductor nanowires
S.M. Frolov, S.R. Plissard, S. Nadj-Perge, L.P. Kouwenhoven, E.P.A.M. Bakkers
MRS Bulletin 38 (10), 809-815 (2013).
[22]. Efficiency enhancement of InP nanowire solar cells by surface cleaning
Y. Cui, J. Wang, S.R. Plissard, A. Cavalli, T.T.T. Vu, R.P.J. van Veldhoven, L. Gao, M. Trainor, M.A. Verheijen, J.E.M. Haverkort, E.P.A.M. Bakkers
Nano Letters 13(9), 4113-4117 (2013).
[21]. Reversible switching of InP nanowire growth direction by catalyst engineering
J. Wang, S.R. Plissard, M.A. Verheijen, L.-F. Feiner, A. Cavalli, E.P.A.M. Bakkers
Nano Letters 13(8), 3802-3806 (2013).
[20]. Direct band gap Wurtzite Gallium Phosphide nanowires
S. Assali, I. Zardo, S.R. Plissard, D. Kriegner, M.A. Verheijen, G. Bauer, A. Meijerink, A. Belabbes, F. Bechstedt, J.E.M. Haverkort, E.P.A.M. Bakkers
Nano Letters 13(4), 1559-1563 (2013).
[19]. High optical quality single crystal phase Wurtzite and Zincblende InP nanowires
T.T.T. Vu, T. Zehender, M.A. Verheijen, S.R. Plissard, G.W.G. Immink, J.E.M. Haverkort, E.P.A.M. Bakkers
Nanotechnology 24, 115705 (2013).
[18]. Electrical control over single hole spins in nanowire quantum dots
V.S. Pribiag, S. Nadj-Perge, S.M. Frolov, J.W.G. van den Berg, I. van Weperen, S.R. Plissard, E.P.A.M. Bakkers, L.P. Kouwenhoven
Nature Nanotechnology 8, 170-174 (2013).
[17]. Quantized conductance in an InSb nanowires
I. van Weperen, S.R. Plissard, E.P.A.M. Bakkers, S.M. Frolov, L.P. Kouwenhoven
Nano Letters 13(2), 387-391 (2013).
[16]. Fast Spin-Orbit qubit in an indium antimonide nanowire
J.W.G. van den Berg, S. Nadj-Perge, V.S. Pribiag, S.R. Plissard, E.P.A.M. Bakkers, S.M. Frolov, L.P. Kouwenhoven
Physical Review Letters 110(6), 066806 (2013).
2012
[15]. Electrical properties of InAs1−xSbx and InSb nanowires grown by molecular beam epitaxy
C. Thelander, P. Caroff, S. Plissard, K.A. Dick
Applied Physics Letters 110(6), 066806 (2012).
[14]. Signatures of Majorana fermions in hybrid Superconductor-Semiconductor nanowire devices
V. Mourik, K. Zuo, S.M. Frolov, S.R. Plissard, E.P.A.M. Bakkers, L.P. Kouwenhoven
Science 336(6084), 1003-1007 (2012).
[13]. Spectroscopy of Spin-Orbit quantum bits in indium antimonide nanowire
S. Nadj-Perge, V.S. Pribiag, J.W.G. van den Berg, K. Zuo, S.R. Plissard, E.P.A.M. Bakkers, S.M. Frolov, L.P. Kouwenhoven
Physical Review Letters 108, 166801 (2012).
[12]. From InSb nanowires to nanocubes: Looking for the sweet spot
S.R. Plissard, D.R. Slapak, M.A. Verheijen, M. Hocevar, G.W.G. Immink, I. van Weperen, S. Nadj-Perge,S.M. Frolov, L.P. Kouwenhoven, E.P.A.M. Bakkers
Nano Letters 12(4), 1794-1798 (2012).
[11]. Faceting, composition and crystal phase evolution in III/V antimonide nanowire heterostructures revealed by combining microscopy techniques
T. Xu, K.A. Dick, S. Plissard, T.H. Nguyen, Y. Makoudi, M. Berthe, J.-P. Nys, X. Wallart, B. Grandidier, P. Caroff
Nanotechnology 23, 095702 (2012).
[10]. Position-controlled [100] InP nanowire arrays
J. Wang, S. Plissard, M. Hocevar, T.T.T. Vu, T. Zehender, G. G.W. Immink, M.A. Verheijen, J. Haverkort, E.P.A.M. Bakkers
Applied Physics Letters 100, 053107 (2012).
2011
[09]. High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning
S. Plissard, G. Larrieu, X. Wallart, P. Caroff
Nanotechnology 22(27), 275602 (2011).
[08]. Effects of crystal phase mixing on the electrical properties of InAs nanowires
C. Thelander, P. Caroff, S. Plissard, K.A. Dick
Nano Letters 11(6), 2424-2429 (2011).
2010
[07]. Gold-free growth of GaAs nanowires on silicon: arrays and polytypism
S. Plissard, K.A. Dick, G. Larrieu, S. Godey, A. Addad, X. Wallart, P. Caroff
Nanotechnology 21(38), 385602 (2010).
[06]. Electronic properties of the high electron mobility Al0.56In0.44Sb/Ga0.5In0.5Sb heterostructure
L. Desplanque, D. Vignaud, S. Godey, E. Cadio, S. Plissard, X. Wallart, P. Liu, H. Sellier
Journal of Applied Physics 108(4), 043704 (2010).
[05]. Picosecond carrier lifetime in Low-Temperature-grown GaAsSb
X. Wallart, C. Coinon, S. Plissard, S. Godey, O. Offranc, Y. Androussi, V. Magnin, J.F. Lampin
Applied Physics Express 3(11), 111202 (2010).
[04]. Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
S. Plissard, K.A. Dick, X. Wallart, P. Caroff
Applied Physics Letters 96(12), 121901 (2010).
[03]. Fully relaxed low-mismatched InAlAs layer on an InP substrate by using a two step buffer
S. Plissard, C. Coinon, Y. Androussi, X. Wallart
Journal of Applied Physics 107(1), 016102 (2010).
2007
[02]. Extended X-ray absorption fine structure study of arsenic in HgCdTe
S. Plissard, G. Giusti, B. Polge, P. Ballet, A. Million, X. Biquard, E. Molva, J.P. Barnes, P. Holliger
Journal of Electronic Materials 36(8), 919-924 (2007).
2004
[01]. Dual-band infrared detectors made on high-quality HgCdTe epilayers grown by molecular beam epitaxy on CdZnTe or CdTe/Ge substrates
P. Ballet, F. Noel, F. Pottier, S. Plissard, J.P. Zanatta, J. Baylet, O. Gravrand, E. De Borniol, S. Martin, P. Castelein, J.P. Chamonal, A. Million, G. Destefanis
Journal of Electronic Materials 33(6), 667-672 (2004).
