People

Karine Isoird

Karine Isoird

Research team

ISGE : Power Management System Integration

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Latest publications

2023

Conference papers

Daniel Rouly, Josiane Tasselli, Patrick Austin, Yvon Cordier, Aimeric Courville, et al.. Epitaxie localisée de P-GaN par EJM pour la fabrication de HEMTs AlGaN/GaN normally-off. Symposium de génie électrique SGE 2023, Université de Lille, Jul 2023, Lille, France. ⟨hal-04127127⟩

Raid Gourad, Ralph Makhoul, Karine Isoird, Josiane Tasselli, Alain Cazarré, et al.. Développement de la gravure plasma O2 pour la réalisation de composants de puissance diamant. Sysmpsoium de Génie électrique SGE 2023, Université de Lille, Jul 2023, LILLE, France. ⟨hal-04127068⟩

M.A. Pinault-Thaury, Mohamed Bouras, Rémi Gillet, Ingrid Stenger, François Jomard, et al.. Vertical pin diodes on large freestanding (100) diamond film. 2023 EUROPEAN MATERIALS RESEARCH SOCIETY Spring Meeting, EUROPEAN MATERIALS RESEARCH SOCIETY, May 2023, Strasbourg, France. ⟨hal-04219862⟩

Autres documents

Florent Sevely, Josiane Tasselli, Karine Isoird, Luong Viêt Phung, Camille Sonneville, et al.. Realization and characterization of vertical PIN diode on 100 diamond. 33rd International Conference on Diamond and Carbon Materials, Sep 2023, Palma, Spain. , 2023. ⟨hal-04193251⟩

Mohamed Bouras, Raid Gourad, Karine Isoird, Fuccio Cristiano, Josiane Tasselli, et al.. Locally Ion Implantation and Annealing Effects in Diamond. Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium. ⟨hal-04396208⟩

Mohamed Bouras, Raid Gourad, Karine Isoird, Fuccio Cristiano, Josiane Tasselli, et al.. Locally Ion Implantation and Annealing Effects in Diamond. Hasselt Diamond Workshop 2023 - SBDD XXVII, Mar 2023, Hässelt, Belgium. ⟨hal-04269992⟩

M.A. Pinault-Thaury, Mohamed Bouras, Raid Gourad, Karine Isoird, Fuccio Cristiano, et al.. Locally Ion Implantation and Annealing Effects in Diamond. 3rd MOMENTOM INTERNATIONAL CONGRESS, Mar 2023, Gif-sur-yvette, France. 2023. ⟨hal-04271407⟩

Daniel Rouly, Josiane Tasselli, Patrick Austin, Karine Isoird, Frédéric Morancho. Design and Fabrication of AlGaN/GaN normally-off HEMTs. 10th IRP NextPV International workshop, Jan 2023, Toulouse, France. ⟨hal-03934236⟩

2022

Journal articles

Atse Julien Eric N’dohi, Camille Sonneville, Luong Viet Phung, Thi Huong Ngo, Philippe de Mierry, et al.. Micro-Raman characterization of homo-epitaxial n doped GaN layers for vertical device applications. AIP Advances, 2022, 12 (2), pp.025126. ⟨10.1063/5.0082860⟩. ⟨hal-03582833⟩

P. Vigneshwara Raja, Christophe Raynaud, Camille Sonneville, Atse Julien Eric N’dohi, Hervé Morel, et al.. Comprehensive characterization of vertical GaN-on-GaN Schottky barrier diodes. Microelectronics Journal, 2022, 128, pp.105575. ⟨10.1016/j.mejo.2022.105575⟩. ⟨hal-03826217⟩

Conference papers

Zahraa Zaidan, Nedal Al Taradeh, Christophe Rodriguez, Abdelatif Jaouad, Ali Soltani, et al.. Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices. Conférence Euro-méditerranéenne Organisé par Matériaux, Composants et Systèmes (EMCMDS), Nov 2022, Fez, Morocco. ⟨hal-04303675⟩

Camille Sonneville, Atse Julien Eric N’dohi, S Saidi, T H Ngo, P. de Mierry, et al.. Caractérisation par spectroscopie micro-Raman de diodes GaN Schottky. Conférence Internationale Matériaux, Oct 2022, Lille, France. ⟨hal-03844887⟩

Zahraa Zaidan, Nedal Al Taradeh, Christophe Rodriguez, Abdelatif Jaouad, Ali Soltani, et al.. Toward an Innovative Monolithic Integration of Vertical and Lateral GaN Devices. Conférence Euro-méditerranéenne Matériaux, Composants et Systèmes EMCM-DS, Oct 2022, Fes, Morocco. ⟨hal-03946187⟩

Atse Julien Eric N’dohi, Camille Sonneville, Soufiane Saidi, Thi Huong Ngo, P. de Mierry, et al.. Multiphysics Characterizations of Vertical GaN Schottky Diodes. 2022 Compound Semiconductor Week (CSW), Jun 2022, Ann Arbor, United States. pp.1-2, ⟨10.1109/CSW55288.2022.9930447⟩. ⟨hal-03844585⟩

Daniel Rouly, Patrick Austin, Josiane Tasselli, Frédéric Morancho, Karine Isoird, et al.. Normally-Off AlGaN/GaN HEMTs based on selective area regrowth of a P-GaN gate in nanostructured patterns. EMRS-2022 Fall Meeting European Materials Research Society, Sep 2022, Varsovie, Poland. ⟨hal-03697766⟩

Karine Isoird, Josiane Tasselli, Yohann Spiegel, Raid. Gourad, Fuccio Cristiano, et al.. Locally Ion Implantation and Annealing Effects in Diamond. E-MRS 2022 Fall Meeting., Sep 2022, Warsaw, Poland. ⟨hal-03766749⟩

Daniel Rouly, Josiane Tasselli, Patrick Austin, Chaymaa Haloui, Karine Isoird, et al.. Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs. 29th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES 2022), Jun 2022, Wroclaw, Poland. ⟨10.23919/MIXDES55591.2022.9838389⟩. ⟨hal-03697713⟩

Autres documents

Daniel Rouly, Josiane Tasselli, Patrick Austin, Karine Isoird, Frédéric Morancho, et al.. Conception et réalisation technologique de structures HEMTs AlGaN/GaN normally-off à grille P-GaN. JEP 2022: Journées des Electroniques de Puissance, Mar 2022, Grenoble, France. ⟨hal-03621863⟩

2021

Conference papers

Ralph Makhoul, Karine Isoird, Luong Viet Phung, Dominique Planson. Conception de diodes TMBS haute tension (6kV) en diamant. SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France. ⟨hal-03355128⟩

Lya Fontaine, Karine Isoird, Josiane Tasselli, Patrick Austin, Emmanuel Scheid, et al.. Développement de briques technologiques pour la fabrication de composants MOS diamant : contacts ohmiques et capacités MIS sur diamant de type P. SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France. ⟨hal-02918490v2⟩

Lya Fontaine, Karine Isoird, Josiane Tasselli, Emmanuel Scheid, Patrick Austin, et al.. Fabrication and characterization of Si3N4-MIS structures on p-type diamond. 31st International Conference on Diamond and Carbon Materials, Sep 2021, On line, Spain. ⟨hal-03445543⟩

Ralph Makhoul, Karine Isoird, Luong Viet Phung, Dominique Planson. High voltage (6kV) diamond TMBS diode design. 31st International Conference On Diamond and Carbon Materials, Sep 2021, Palma, Mallorca, Spain. ⟨hal-03715580⟩

Autres documents

Josiane Tasselli, Lya Fontaine, Karine Isoird, Emmanuel Scheid, Patrick Austin, et al.. Study of Ti/Pt/Au ohmic contacts on P-type boron doped (100) diamond with linear and circular TLM structures. 31st International Conference on Diamond and Carbon Materials, Sep 2021, ONLINE, Spain. 2021. ⟨hal-03445531⟩

Josiane Tasselli, Lya Fontaine, Karine Isoird, Patrick Austin. Ohmic contacts by phosphorous ion implantation on (111) N-type CVD Diamond. 31st International Conference on Diamond and Carbon Materials, Sep 2021, ONLINE, Spain. , 2021. ⟨hal-03445509⟩

2020

Conference papers

Chaymaa Haloui, Gaëtan Toulon, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, et al.. Développement technologique d'un HEMT normally- off avec une grille à barrière P-GaN. SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2020), Jul 2021, Nantes, France. ⟨hal-02918372v2⟩

Chaymaa Haloui, Toulon Gaëtan, Josiane Tasselli, Yvon Cordier, Éric Frayssinet, et al.. Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs. 28 International Conference MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, Jun 2020, Wroclow, Poland. ⟨hal-02922723⟩

2019

Conference papers

Lya Fontaine, Karine Isoird, Josiane Tasselli, Alain Cazarré, Patrick Austin, et al.. Optimisation des techniques de microfabrication sur diamant. Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2019), Jun 2019, Montpellier, France. pp.691 - 697. ⟨halshs-02329822⟩

Chaymaa Haloui, Josiane Tasselli, Karine Isoird, David Trémouilles, Patrick Austin, et al.. Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaN. Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France. ⟨hal-02278808⟩

Lya Fontaine, Karine Isoird, Josiane Tasselli, Alain Cazarré, Patrick Austin, et al.. Développement de briques technologiques pour la réalisation de composants de puissance sur diamant. Conférence des Jeunes Chercheurs en Génie Electrique (JCGE 2019), Jun 2019, Oléron, France. ⟨hal-02324807⟩

Lya Fontaine, Karine Isoird, Josiane Tasselli, Patrick Austin, Alain Cazarré, et al.. Ohmic contacts study of P + N diodes on (111) and (100) diamond. 13th IEEE International Conference on Power Electronics and Drive Systems (PEDS 2019), Jul 2019, Toulouse, France. ⟨hal-02324743⟩

2018

Journal articles

Tanguy Phulpin, Karine Isoird, David Trémouilles, Patrick Austin, X. Perpinya, et al.. Contribution to Silicon-Carbide-MESFET ESD robustness analysis. IEEE Transactions on Device and Materials Reliability, 2018, 18 (2), pp.214-223. ⟨10.1109/TDMR.2018.2817255⟩. ⟨hal-01740513⟩

Conference papers

Audrey Chapelle, Éric Frayssinet, Yvon Cordier, Yohann Spiegel, Leïla Benmosfeta, et al.. Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée. Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5. ⟨hal-02981903v2⟩

2017

Journal articles

Richard Monflier, Karine Isoird, Alain Cazarré, Josiane Tasselli, Alexandra Servel, et al.. Diamond Schottky diodes operating at 473 K. EPE Journal - European Power Electronics and Drives, 2017, 27 (3), pp.118-124. ⟨10.1080/09398368.2017.1388625⟩. ⟨hal-01618095⟩

2016

Conference papers

Tanguy Phulpin, David Trémouilles, Karine Isoird, Patrick Austin, M Vellvehi, et al.. Robustesse de MESFET SiC face aux décharges électrostatiques. SGE Symposium de Génie Electrique, Jun 2016, Grenoble, France. ⟨hal-01310299⟩

Richard Monflier, Karine Isoird, Alain Cazarré, Josiane Tasselli, Alexandra Servel, et al.. Diodes Schottky diamant fonctionnant à 200°C. Symposium de Génie Electrique, G2Elab, Jun 2016, Grenoble, France. ⟨hal-01245628v2⟩

Emmanuel Marcault, David Trémouilles, Karine Isoird, Frédéric Morancho, Mathieu Gavelle. Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading. 18th European Conference on Power Electronics and Applications (EPE'2016), Sep 2016, Karlsruhe, Germany. ⟨10.1109/EPE.2016.7695492⟩. ⟨hal-01556254⟩

Tanguy Phulpin, Karine Isoird, David Trémouilles, Patrick Austin, Javier Leon, et al.. Fiabilité de MESFET SiC face aux décharges électrostatiques. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361658⟩

Emmanuel Marcault, David Trémouilles, Karine Isoird, Gaëtan Toulon, Frédéric Morancho, et al.. Mesure de résistance dynamique de HEMT en GaN à l'échelle de la centaine de nanosecondes. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361669⟩

2015

Journal articles

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Failure Analysis of ESD-stressed SiC MESFET. Microelectronics Reliability, 2015, 55 (9-10), pp.1542-1548. ⟨10.1016/j.microrel.2015.06.121⟩. ⟨hal-01176674⟩

Houssam Arbess, Karine Isoird, Moustafa Zerarka, Henri Schneider, Marie-Laure Locatelli, et al.. High termination efficiency using polyimide trench for high voltage diamond Schottky diode. Diamond and Related Materials, 2015, 58, pp.149-154. ⟨10.1016/j.diamond.2015.07.006⟩. ⟨hal-01218796⟩

Sylvain Noblecourt, Josiane Tasselli, Frédéric Morancho, Karine Isoird, Patrick Austin, et al.. Design and realisation of deep trench superjunction diode dor 600 V applications. European Journal of Electrical Engineering, 2015, ⟨10.3166/EJEE.17.345-361⟩. ⟨hal-01280199⟩

Sylvain Noblecourt, Frédéric Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli. Design optimisation of the deep trench termination for superjunction power devices. International Journal of Microelectronics and Computer Science, 2015, 6 (4), pp.117-123. ⟨hal-01955656⟩

Houssam Arbess, Karine Isoird, Saleem Hamady, Moustafa Zerarka, Dominique Planson. Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode. IEEE Transactions on Electron Devices, 2015, 62 (9), pp. 2945-2951. ⟨10.1109/TED.2015.2456073⟩. ⟨hal-01218835⟩

Conference papers

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Analyse du mécanisme d'un défaut ESD sur un MESFET en SiC. Journées Nationales du Réseau de Doctorants en Microélectronique, Jun 2015, Bordeaux, France. ⟨hal-01339803⟩

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. An Electrostatic-Discharge-Protection Solution for Silicon-Carbide MESFET. EOS/ESD Symposium, Sep 2015, Reno, United States. ⟨hal-01178266⟩

Sylvain Noblecourt, Frédéric Morancho, Karine Isoird, Patrick Austin, Josiane Tasselli. An improved junction termination design using deep trenches for superjunction power devices. International Conference Mixed Design of Integrated Circuits and Systems (MIXDES 2015), Jun 2015, Torùn, Poland. ⟨10.1109/MIXDES.2015.7208583⟩. ⟨hal-01191234⟩

Autres documents

Tanguy Phulpin, Karine Isoird, David Trémouilles, Patrick Austin. Protection ESD pour MESFET SiC. Journées Intégration et Systèmes de Puissance 3D (ISP3D), Mar 2015, Tours, France. 2015. ⟨hal-01339804⟩

2014

Journal articles

Sylvain Noblecourt, Josiane Tasselli, Frédéric Morancho, Karine Isoird, Patrick Austin, et al.. Optimisation de la diode à Superjonction à tranchées profondes pour des applications à 600V. European Journal of Electrical Engineering, 2014, 17 (5-6), pp.345-361. ⟨10.3166/ejee.17.345-361⟩. ⟨hal-01955633⟩

Moustafa Zerarka, Patrick Austin, Frédéric Morancho, Karine Isoird, Houssam Arbess, et al.. Analysis Study of Sensitive Volume and Triggering Criteria of SEB in Super-Junction MOSFETs. IET Circuits, Devices & Systems, 2014, 8 (3), pp.197-204. ⟨hal-01005966⟩

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Analysis of an ESD failure mechanism on a SiC MESFET. Microelectronics Reliability, 2014, pp.MR11331. ⟨10.1016/j.microrel.2014.07.134⟩. ⟨hal-01059962⟩

Conference papers

Dominique Planson, Pierre Brosselard, Karine Isoird, Mihai Lazar, Luong Viêt Phung, et al.. Wide bandgap semiconductors for ultra high voltage devices. Design and characterization aspects. CAS, Oct 2014, Sinaia, Romania. pp.35 - 40, ⟨10.1109/SMICND.2014.6966383⟩. ⟨hal-01388002⟩

Moustafa Zerarka, Patrick Austin, Frédéric Morancho, Karine Isoird, Josiane Tasselli, et al.. Durcissement des IGBT planar contre le déclenchement de " Single-Event Burnout ". Symposium de Génie Électrique 2014, Jul 2014, Cachan, France. ⟨hal-01065194⟩

Sylvain Noblecourt, Josiane Tasselli, Frédéric Morancho, Karine Isoird, Patrick Austin, et al.. Optimisation de la diode à Superjonction à tranchées profondes pour des applications à 600V. Symposium de Génie Electrique 2014, Jul 2014, Cachan, France. ⟨hal-01102974⟩

Houssam Arbess, Karine Isoird, Dominique Planson, Luong Viet Phung. Optimisation de la terminaison d'une diode Schottky diamant haute tension. Symposium de Génie Electrique (SGE'14), Jul 2014, Cachan, France. ⟨hal-01065274⟩