2024

Articles dans une revue

L. Ghizzo, David Trémouilles, Frédéric Richardeau, G. Guibaud. Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements. Solid-State Electronics, 2024, 214, pp.108868. ⟨10.1016/j.sse.2024.108868⟩. ⟨hal-04446838⟩

2023

Articles dans une revue

Hassan Hamad, Dominique Tournier, Jean-Michel Reynes, Olivier Perrotin, David Trémouilles, et al.. First results on 1.2 kV SiC MOSFET body diode robustness tests. Microelectronics Reliability, 2023, 151, pp.115264. ⟨10.1016/j.microrel.2023.115264⟩. ⟨hal-04282544⟩

L. Ghizzo, David Trémouilles, Frédéric Richardeau, S. Vinnac, F. Jamin, et al.. Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches. Microelectronics Reliability, 2023, 150, pp.115172. ⟨10.1016/j.microrel.2023.115172⟩. ⟨hal-04242294⟩

L. Ghizzo, David Trémouilles, Frédéric Richardeau, S. Vinnac, Lucas Moreau, et al.. Preconditioning of p-GaN power HEMT for reproducible V measurements. Microelectronics Reliability, 2023, 144, pp.114955. ⟨10.1016/j.microrel.2023.114955⟩. ⟨hal-04049626⟩

Communications dans un congrès

Gaëtan Toulon, Cristina Miccoli, David Trémouilles, Frédéric Morancho, Maria-Eloisa Castagna, et al.. Dynamic RDS-on degradation analysis on power GaN HEMT by means of TCAD simulations and experimental measurement. WOCSDICE - EXMATEC 2023 6th Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe 17th Expert Evaluation and Control of Compound Semiconductor Materials and Technologies, May 2023, Palerme, Italy. ⟨hal-04128305⟩

Lucien Ghizzo, David Trémouilles, Frédéric Richardeau. Méthode de préconditionnement du HEMT GaN pour une mesure reproductible de Vth. SYMPOSIUM DE GENIE ELECTRIQUE (SGE 2023), Jul 2023, Lille, France. https://sge2023.sciencesconf.org/resource/page/id/35. ⟨hal-04157673⟩

Ludovic Roche, David Trémouilles, Emmanuel Marcault, Corinne Alonso. Study of GaN HEMTs Robustness to Application-Like, Software-Controlled Overshoots Emulating Different Gate Routings in Original 50 Ohms Environment. Workshop on Wide Bandgap Power Devices & Applications (WiPDA) 2023, Dec 2023, Charlotte (North Carolina), United States. ⟨10.1109/WiPDA58524.2023.10382216⟩. ⟨hal-04239100⟩

L. Ghizzo, G. Guibaud, C. de Nardi, F. Jamin, V. Chazal, et al.. Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes. 49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩. ⟨hal-04307540⟩

Lucien Ghizzo, David Trémouilles, Frédéric Richardeau, Sébastien Vinnac, François Jamin, et al.. Over-Voltage and Cross-Conduction Hard Switching Stress on Schottky Gate-Type p-GaN HEMT in Half-Bridge Operation Experimental and Physical Approaches [ESREF'23]. 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Oct 2023, Toulouse, France. ⟨10.1016/j.microrel.2023.115172⟩. ⟨hal-04252379⟩

2022

Pré-publications, documents de travail

Ludovic Roche, David Trémouilles, Emmanuel Marcault, Corinne Alonso. Driving of GaN HEMT. 2022. ⟨hal-03874986⟩

2021

Communications dans un congrès

Alonso Gutierrez Galeano, Emmanuel Marcault, Corinne Alonso, David Trémouilles. Transmission Line Approach for the PCB Gate Interconnection Design in GaN-Based High-Frequency Power Converters. PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2021, on line, France. ⟨hal-03370453⟩

2020

Chapitres d’ouvrages

A. Gutiérrez, Emmanuel Marcault, Corinne Alonso, Jean Paul Laur, David Trémouilles. Parseval’s Theorem Used for the Inductor Analysis in High-Frequency Boost Converters. ELECTRIMACS 2019 Selected Papers, pp.347-362, 2020, 978-3-030-56970-9. ⟨10.1007/978-3-030-56970-9_26⟩. ⟨hal-03100915⟩

Communications dans un congrès

A Gutierrez, E Marcault, Corinne Alonso, David Trémouilles. Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter. 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (virtuel), France. ⟨10.23919/EPE20ECCEEurope43536.2020.9215645⟩. ⟨hal-02987332⟩

A Gutierrez, E Marcault, Corinne Alonso, David Trémouilles. Experimental Comparison of Discrete Cascode GaN-GaN and Single e-GaN in High-Frequency Power Converter. PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, Jul 2020, Nuremberg (Virtual), Germany. ⟨hal-02998007⟩

2019

Articles dans une revue

François Boige, David Trémouilles, Frédéric Richardeau. Physical origin of the gate current surge during short-circuit operation of SiC MOSFET. IEEE Electron Device Letters, 2019, 40 (5), pp.666-669. ⟨10.1109/led.2019.2896939⟩. ⟨hal-02020275⟩

Communications dans un congrès

Chaymaa Haloui, Josiane Tasselli, Karine Isoird, David Trémouilles, Patrick Austin, et al.. Développement technologique d'un HEMT normally-off avec une grille à barrière P-GaN. Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM), Jun 2019, Montpellier, France. ⟨hal-02278808⟩

2018

Articles dans une revue

Tanguy Phulpin, Karine Isoird, David Trémouilles, Patrick Austin, X. Perpinya, et al.. Contribution to Silicon-Carbide-MESFET ESD robustness analysis. IEEE Transactions on Device and Materials Reliability, 2018, 18 (2), pp.214-223. ⟨10.1109/TDMR.2018.2817255⟩. ⟨hal-01740513⟩

Vincent Mortet, A. Taylor, M. Davydova, L. Fekete, Z. Vlčková Živcová, et al.. Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond. MRS Advances, 2018, 3 (33), pp.1931-1935. ⟨10.1557/adv.2018.39⟩. ⟨hal-01956851⟩

V. Mortet, A. Taylor, Z. Vlčková Živcová, D. Machon, O. Frank, et al.. Analysis of heavily boron-doped diamond Raman spectrum. Diamond and Related Materials, 2018, 88, pp.163-166. ⟨10.1016/j.diamond.2018.07.013⟩. ⟨hal-01956849⟩

Dany Hachem, David Trémouilles, Frédéric Morancho, Gaëtan Toulon. A new electro-optical transmission-line measurement-method revealing a possible contribution of source and drain contact resistances to GaN HEMT dynamic on-resistance. Microelectronics Reliability, 2018, 88-90, pp.406-410. ⟨10.1016/j.microrel.2018.07.119⟩. ⟨hal-01893190⟩

M. Davydova, A. Taylor, P. Hubík, L. Fekete, L. Klimša, et al.. Characteristics of zirconium and niobium contacts on boron-doped diamond. Diamond and Related Materials, 2018, 83, pp.184-189. ⟨10.1016/j.diamond.2018.02.009⟩. ⟨hal-01956850⟩

Communications dans un congrès

Dany Hachem, David Trémouilles, Frédéric Morancho, Gaëtan Toulon. Variation de la résistance de contact métal/semi-conducteur dans une structure HEMT GaN sous illumination UV. Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. 4p. ⟨hal-02981923v2⟩

Audrey Chapelle, Éric Frayssinet, Yvon Cordier, Yohann Spiegel, Leïla Benmosfeta, et al.. Première démonstration expérimentale d’un interrupteur HEMT normally-off en GaN avec une région P-GaN enterrée. Symposium de Génie Electrique (SGE 2018), Université de Lorraine [UL], Jul 2018, Nancy, France. pp.3 - 5. ⟨hal-02981903v2⟩

2017

Articles dans une revue

Mouna Mahane, David Trémouilles, Marise Bafleur, Benjamin Thon, Marianne Diatta, et al.. New triggering-speed-characterization method for diode-triggered SCR using TLP. Microelectronics Reliability, 2017, 76-77, pp.692 - 697. ⟨10.1016/j.microrel.2017.07.063⟩. ⟨hal-01643028⟩

Vincent Mortet, Z. Vlčková Živcová, A. Taylor, O. Frank, P. Hubík, et al.. Insight into boron-doped diamond Raman spectra characteristic features. Carbon, 2017, 115, pp.279 - 284. ⟨10.1016/j.carbon.2017.01.022⟩. ⟨hal-01643027⟩

François Boige, Frédéric Richardeau, David Trémouilles, Stéphane Lefebvre, G. Guibaud. Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation. Microelectronics Reliability, 2017, 76-77, pp.500 - 506. ⟨10.1016/j.microrel.2017.06.085⟩. ⟨hal-01643030⟩

Communications dans un congrès

François Boige, Frédéric Richardeau, D. Trémouilles, S. Lefebvre, G. Guibaud. Investigation on damaged planar-oxide of 1200V SiC Power Mosfets in non-destructive short-circuit operation. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sept. 25-28, 2017, Bordeaux (FRANCE), 2017, Bordeaux, France. ⟨hal-03937651⟩

2016

Articles dans une revue

V. Mortet, David Trémouilles, J. Bulíř, P. Hubík, L. Heller, et al.. Peculiarities of high electric field conduction in p-type diamond. Applied Physics Letters, 2016, 108 (15), pp.152106. ⟨10.1063/1.4946853⟩. ⟨hal-01411427⟩

Communications dans un congrès

Emmanuel Marcault, David Trémouilles, Karine Isoird, Frédéric Morancho, Mathieu Gavelle. Dynamic of power-GaN-HEMT electrical parameters: Why DC characterization might be misleading. 18th European Conference on Power Electronics and Applications (EPE'2016), Sep 2016, Karlsruhe, Germany. ⟨10.1109/EPE.2016.7695492⟩. ⟨hal-01556254⟩

Tanguy Phulpin, David Trémouilles, Karine Isoird, Patrick Austin, M Vellvehi, et al.. Robustesse de MESFET SiC face aux décharges électrostatiques. SGE Symposium de Génie Electrique, Jun 2016, Grenoble, France. ⟨hal-01310299⟩

Emmanuel Marcault, David Trémouilles, Karine Isoird, Gaëtan Toulon, Frédéric Morancho, et al.. Mesure de résistance dynamique de HEMT en GaN à l'échelle de la centaine de nanosecondes. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361669⟩

Tanguy Phulpin, Karine Isoird, David Trémouilles, Patrick Austin, Javier Leon, et al.. Fiabilité de MESFET SiC face aux décharges électrostatiques. Symposium de Genie Electrique, Jun 2016, Grenoble, France. ⟨hal-01361658⟩

2015

Articles dans une revue

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Failure Analysis of ESD-stressed SiC MESFET. Microelectronics Reliability, 2015, 55 (9-10), pp.1542-1548. ⟨10.1016/j.microrel.2015.06.121⟩. ⟨hal-01176674⟩

Houssam Arbess, Marise Bafleur, David Trémouilles, Moustafa Zerarka. Optimization of a MOS–IGBT–SCR ESD protection component in smart power SOI technology. Microelectronics Reliability, 2015, 55 (9-10), pp.1476-1480. ⟨10.1016/j.microrel.2015.06.138⟩. ⟨hal-01238569⟩

Communications dans un congrès

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Analyse du mécanisme d'un défaut ESD sur un MESFET en SiC. Journées Nationales du Réseau de Doctorants en Microélectronique, Jun 2015, Bordeaux, France. ⟨hal-01339803⟩

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. An Electrostatic-Discharge-Protection Solution for Silicon-Carbide MESFET. EOS/ESD Symposium, Sep 2015, Reno, United States. ⟨hal-01178266⟩

Autres documents

Tanguy Phulpin, Karine Isoird, David Trémouilles, Patrick Austin. Protection ESD pour MESFET SiC. Journées Intégration et Systèmes de Puissance 3D (ISP3D), Mar 2015, Tours, France. 2015. ⟨hal-01339804⟩

2014

Articles dans une revue

Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, et al.. Analysis of an ESD failure mechanism on a SiC MESFET. Microelectronics Reliability, 2014, pp.MR11331. ⟨10.1016/j.microrel.2014.07.134⟩. ⟨hal-01059962⟩