2024

Communications dans un congrès

Jean-Guy Tartarin. Low-Frequency Noise Measurements and Applications: Low-Frequency Noise Metrology For The Development of High-Frequency Technologies and For High Purity Signal Generation. 102th ARFTG Microwave Measurement Symposium, Andrej Rumiantsev, Jan 2024, San Antonio (TX), United States. ⟨hal-04440695⟩

2023

Articles dans une revue

B. Pinault, Jean-Guy Tartarin, D. Saugnon, R. Leblanc. Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA. Microelectronics Reliability, 2023, Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023, 150, pp.115126. ⟨10.1016/j.microrel.2023.115126⟩. ⟨hal-04493506⟩

N. Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, et al.. Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications. Microelectronics Reliability, 2023, 150, pp.115110. ⟨10.1016/j.microrel.2023.115110⟩. ⟨hal-04278649⟩

Communications dans un congrès

Pinault Bastien, Jean-Guy Tartarin, Damien Saugnon, Leblanc Rémy. A new Method for Designing Robust Low Noise Amplifier. Space Microwave Week 2023, European Space Agency (ESA), May 2023, Noordwijk, Netherlands. ⟨hal-04142799⟩

Nasri Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, et al.. Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. IEEE International Reliability Physics Symposium (IRPS 2023), Mar 2023, Monterey, CA, United States. ⟨10.1109/IRPS48203.2023.10117807⟩. ⟨hal-04125371⟩

Jean-Guy Tartarin, Bastien Pinault, Damien Saugnon. Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICs. IEEE International Conference on Noise and Fluctuations, Chistoforos Theodorou, Oct 2023, Grenoble, France. ⟨hal-04440655⟩

Bastien Pinault, Jean-Guy Tartarin, Damien Saugnon, Rémy Leblanc. A Self-Reconfigurable Highly Linear and Robust X-Band MMIC GaN LNA. 18th European Microwave Integrated Circuits Conference (EuMIC 2023), Sep 2023, Berlin, Germany. pp.13-16, ⟨10.23919/EuMIC58042.2023.10288807⟩. ⟨hal-04494172⟩

2022

Articles dans une revue

Jean-Guy Tartarin, Éric Tournier, Christophe Viallon. Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies. Electronics, 2022, 11 (5), pp.684. ⟨10.3390/electronics11050684⟩. ⟨hal-03705541⟩

Pré-publications, documents de travail

Bastien Pinault, Jean-Guy Tartarin, R Leblanc, A Jourier. Design Method for Reconfigurable Low Noise or Highly linear LNA. 2022. ⟨hal-03587892⟩

Bastien Pinault, Jean-Guy Tartarin, R Leblanc, A Jourier. Méthode de Conception Agile en Tension pour Amplificateur Faible Bruit Robuste. 2022. ⟨hal-03587960⟩

2021

Articles dans une revue

Mahmoud Abou Daher, Marie Lesecq, N. Defrance, Etienne Okada, Bertrand Boudart, et al.. Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer. Microwave and Optical Technology Letters, 2021, 63 (9), pp.2376-2380. ⟨10.1002/mop.32919⟩. ⟨hal-03249292⟩

2020

Articles dans une revue

Mahmoud Abou Daher, Marie Lesecq, Pascal Tilmant, N. Defrance, Michel Rousseau, et al.. AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (3), pp.033201. ⟨10.1116/1.5143418⟩. ⟨hal-02929037⟩

Jean-Guy Tartarin, Oana Lazar, Axel Rumeau, Bernard Franc, Laurent Bary, et al.. Analysis Of Drain Current Transient Stability Of AlGaN/GaN HEMT stressed under HTOL & HTRB, By Random Telegraph Noise And Low Frequency Noise Characterizations. Microelectronics Reliability, 2020, 114, pp.113895. ⟨10.1016/j.microrel.2020.113895⟩. ⟨hal-03180595⟩

2019

Articles dans une revue

Jacques Graffeuil, Laurent Escotte, Jean-Guy Tartarin. Impact of the Frequency Dependence of the Parasitic Admittance on the Diffusion Noise of a Diode Junction at Low Bias. IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩. ⟨hal-02388640⟩

Jean-Guy Tartarin, Damien Saugnon, Laurent Bary, Jacques Graffeuil. Secured Failure Analysis Methodology for Accurate Diagnostic of Defects in GaN HEMT Technologies. International Journal of Information Science & Technology, 2019, 3 (1), pp.3-12. ⟨hal-02086969⟩

Mohamed-Reda Irekti, Marie Lesecq, N. Defrance, Etienne Okada, Eric Frayssinet, et al.. 2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩. ⟨hal-02929065⟩

Jean-Guy Tartarin. Non-destructive techniques for evaluating the reliability of high frequency active devices. Microelectronics Reliability, 2019, 100-101, pp.113359. ⟨10.1016/j.microrel.2019.06.051⟩. ⟨hal-02388674⟩

Communications dans un congrès

Boris Berthelot, Jean-Guy Tartarin, Christophe Viallon, Remy Leblanc, Hassan Maher, et al.. GaN MMIC Differential Multi-function Chip for Ka-Band Applications. 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019, Jun 2019, Boston, United States. pp.1399-1402, ⟨10.1109/MWSYM.2019.8701085⟩. ⟨hal-02315126⟩

Jacques Graffeuil, Laurent Escotte, Jean-Guy Tartarin. Low Frequency Noise Deviation from Schottky theory in p-n junctions. IEEE International Conference on Noise and Fluctuation (ICNF 2019), Jun 2019, Neuchatel, Switzerland. https://icnf2019.epfl.ch/wp-content/uploads/2019/10/ICNF2019_Proceedings.pdf. ⟨hal-02315085⟩

2018

Communications dans un congrès

Jean-Guy Tartarin, Damien Saugnon, Bernard Franc, H. Maher, F. Boone. Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.17-20, ⟨10.23919/EuMIC.2018.8539919⟩. ⟨hal-02088200⟩

Jean-Guy Tartarin, Damien Saugnon, Jacques Graffeuil, Laurent Bary. Methodology for accurate diagnostic of defects in III-N HEMT technologies Non-destructive and destructive experimental tools-electrical and T-CAD models. IEEE Mediterranean Electrotechnical Conference (IEEE MELECON), May 2018, Marrakech, Morocco. 5p. ⟨hal-01877587⟩

2017

Articles dans une revue

Jean-Guy Tartarin, Oana Lazar, Damien Saugnon, B. Lambert, C. Moreau, et al.. Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. Microelectronics Reliability, 2017, 76-77, pp.344-349. ⟨10.1016/j.microrel.2017.07.057⟩. ⟨hal-02088137⟩

Communications dans un congrès

Jean-Guy Tartarin, Oana Lazar, Damien Saugnon, B Lambert, C Moreau, et al.. Gate Defects Analysis in AlGaN/GaN Devices by Mean of Accurate Extraction of the Schottky Barrier Height, Electrical Modeling, T-CAD Simulations and TEM Imaging. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France. ⟨hal-02088188⟩

Jean-Guy Tartarin, Damien Saugnon, Oana Lazar, Guillaume Maillot, Laurent Bary. Understanding traps locations and impact on AlGaN/GaN HEMT by LFN noise & transient measurements, and T-CAD simulations. 2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-4, ⟨10.1109/ICNF.2017.7985988⟩. ⟨hal-02087930⟩

2016

Communications dans un congrès

Jean-Guy Tartarin. GaN Technologies: From The Improvement Of Device Reliability To The Design Of Robust High Frequency Circuits. World Congress of Advanced Materials (WCAM 2016 5th BIT congress), Jun 2016, Chongqing, China. ⟨hal-02088233⟩

Jean-Guy Tartarin, Séraphin Dieudonné Nsele, S Piotrowitcz, S Delage. Self-Biasing Effects Induced by RF Step-Stress in Ka-Band LNAs based on InAlN/GaN HEMT Technology. 11th European Microwave Integrated Circuits Conference (EuMIC 2016), Oct 2016, Londres, United Kingdom. ⟨10.1109/EuMIC.2016.7777596⟩. ⟨hal-02088210⟩

2015

Articles dans une revue

Oana Lazar, Jean-Guy Tartarin, B Lambert, C Moreau, Jean-Luc Roux. Correlation between transient evolutions of the gate and drain currents in AlGaN/GaN technologies. Microelectronics Reliability, 2015, 55 (9-10), pp.1714-1718. ⟨10.1016/j.microrel.2015.06.122⟩. ⟨hal-01234080⟩

Communications dans un congrès

Jean-Guy Tartarin, Laurent Bary, Alexandre Rumeau, Bernard Franc, Laurent Escotte, et al.. METHODES ET OUTILS EXPERIMENTAUX DEDIES A L'ANALYSE COMPORTEMENTALE DES DISPOSITIFS ACTIFS DES HAUTES FREQUENCES. TELECOM & JFMMA 2015, May 2015, Meknes, Maroc. ⟨hal-02088182⟩

Séraphin Dieudonné Nsele, Jean-Guy Tartarin, Laurent Escotte, S Piotrowicz, S Delage. InAlN/GaN HEMT technology for robust HF receivers: An overview of the HF and LF noise performances. International Conference on Noise and Fluctuations, Jun 2015, X'IAN, China. ⟨10.1109/ICNF.2015.7288538⟩. ⟨hal-01234023⟩

Oana Lazar, Jean-Guy Tartarin, B Lambert, C Moreau, J.L. Roux, et al.. New approach for an accurate Schottky Barrier Height's extraction by I-V-T measurements. International Microwave Symposium (IMS 2015), May 2015, Phoenix, AZ, United States. pp.1-4, ⟨10.1109/MWSYM.2015.7166789⟩. ⟨hal-01343966⟩

Arnaud Fernandez, Amadou Gadio, F Destic, Julien Sommer, A Rissons, et al.. The NIMPH Project. 7th CubeSat Symposium , von Karman Institute for Fluid Dynamics, University of Liege, Sep 2015, Liège, Belgium. ⟨hal-01274184⟩

Séraphin Dieudonné Nsele, Charles Robin, Jean-Guy Tartarin, Laurent Escotte, S Piotrowicz, et al.. Ka-band low noise amplifiers based on InAlN/GaN technologies. International Conference on Noise and Fluctuations, Jun 2015, X'IAN, China. 4p., ⟨10.1109/ICNF.2015.7288577⟩. ⟨hal-01234061⟩

2014

Articles dans une revue

Séraphin Dieudonné Nsele, Laurent Escotte, Jean-Guy Tartarin, S. Piotrowicz, S. L Delage. Low-frequency noise in reverse-biased Schottky barriers on InAlN/AlN/GaN heterostructures. Applied Physics Letters, 2014, 105 (19), pp.192105. ⟨10.1063/1.4901906⟩. ⟨hal-02088149⟩