Anne Hemeryck

Since my recruitment at LAAS-CNRS, my research has focused on the development and application of multiscale computational methods, dedicated to addressing physical and chemical problems in materials science for micro and nanotechnology applications. My primary goal is to propose predictive modeling to bridge gaps in experimental data and guide technological processes at the atomic scale through a predictive and multiscale strategy.

My research activity revolves around a major issue: understanding and controlling surfaces and interfaces. I am particularly interested in atomic diffusion at the nanoscale, a crucial process for determining the functional macroscopic properties of materials. In addition, I have a strong interest in defects in semiconductor materials, as understanding the impact of these defects on the macroscopic properties of materials and devices is essential to optimizing their performance in technological applications.

More specifically, atomic diffusion and the presence of defects play a key role in several contexts:

• During material growth, particularly in the integration of materials into microelectronic devices. When directly integrating materials, atomic diffusion and defects influence the nanostructuring of the material, thereby defining the morphology and composition of the resulting layers, especially at the interfaces.
  This topic is being addressed in collaboration with Nicolas Richard (CEA-DAM-DIF, Arpajon), Sébastien Vizzini (IM2NP, Marseille), and Normand Mousseau (Université de Montréal, Canada). Several materials are currently under study, including:
  
  • Thermal oxidation of silicon
  • Growth of copper oxide on aluminum
  • Diffusion of copper into aluminum, from surface to bulk
  • Growth of magnesium and magnesium oxide on silicon, silver, and nickel substrates

• During material use, especially in the context of detecting harmful or polluting gases. Atomic diffusion at the surface of integrated sensitive layers, along with the management of defects in these layers, controls the macroscopic electronic response. The competition between atomic-scale chemical reactions at the surface of the sensing layer determines this response.
  A current application aims to provide a fundamental description of atomic-scale reactions (physisorption, chemisorption, charge transfers) that occur during gas detection.
  Ongoing research also focuses on the effect of humidity on the sensing properties of various metal oxides (SnO2, WO3, In2O3) in collaboration with Dr. Nicolae Barsan from the University of Tübingen, Germany.

• In extreme environments, particularly in aggressive conditions. Under extreme conditions, the intrinsic properties of materials, including semiconductors, can be altered due to damage at the nanoscale, often caused by the formation of defects.
  One current application concerns embedded components for space or nuclear applications subjected to irradiation. Energetic particles can create clusters of defects, potentially rendering the components faulty. This issue is being studied in collaboration with ISAE-SUPAERO (Toulouse), CEA-DAM-DIF (Arpajon), the University of Montreal (Canada), and the University of Nova Gorica (Slovenia).