2025

Articles dans une revue

Nasri Said, Damien Saugnon, K. Harrouche, F Medjdoub, N. Labat, et al.. Nonlinear modeling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: analysis and hard-SOA. Microelectronics Reliability, 2025, 169, pp.115742. ⟨10.1016/j.microrel.2025.115742⟩. ⟨hal-05065556⟩

Communications dans un congrès

Jean-Guy Tartarin, Damien Saugnon. Robustness of GaAs and GaN LNAs in X-and Kuband: performances and strategies of protection under jamming or destructive signal. ICNF 2025, Jun 2025, Taormina (Sicile), Italy. ⟨hal-05354349⟩

Jean-Guy Tartarin, Damien Saugnon. Robustness of GaN LNAs under Ku-band jamming signal: understanding the weak point to design future robust LNAs. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France. ⟨hal-05323114⟩

2024

Communications dans un congrès

Jean-Guy Tartarin. Low-Frequency Noise Measurements and Applications. 102th ARFTG Microwave Measurement Symposium, Andrej Rumiantsev, Jan 2024, San Antonio (TX), United States. ⟨hal-04440695⟩

Jean-Guy Tartarin. How Future Defence Strategies are Driving Technological Advancements from Devices to Systems ?. EuMW 2024, Defence Security and Space Forum, JG Tartarin, Sep 2024, Paris ( France), France. ⟨hal-05354189⟩

N. Said, Damien Saugnon, Kathia Harrouche, F Medjdoub, Nathalie Labat, et al.. Nonlinear modelling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: analysis and hard-SOA. 35th ESREF, Sep 2024, Parma (Italie), Italy. ⟨hal-05353524⟩

N. Said, Damien Saugnon, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, et al.. RF-Robustness enhancement in AlN/GaN HEMT through AlGaN Back-Barrier: nonlinear model analysis. 19th European Microwave Integrated Circuits Conference (EuMIC 2024), Sep 2024, Paris, France. pp.2-5, ⟨10.23919/EuMIC61603.2024.10732162⟩. ⟨hal-04765521⟩

2023

Articles dans une revue

B. Pinault, Jean-Guy Tartarin, D. Saugnon, R. Leblanc. Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA. Microelectronics Reliability, 2023, Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023, 150, pp.115126. ⟨10.1016/j.microrel.2023.115126⟩. ⟨hal-04493506⟩

N. Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, et al.. Role of AlGaN back-barrier in enhancing the robustness of ultra-thin AlN/GaN HEMT for mmWave applications. Microelectronics Reliability, 2023, 150, pp.115110. ⟨10.1016/j.microrel.2023.115110⟩. ⟨hal-04278649⟩

Communications dans un congrès

Jean-Guy Tartarin, Bastien Pinault, Damien Saugnon. Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICs. IEEE International Conference on Noise and Fluctuations, Chistoforos Theodorou, Oct 2023, Grenoble, France. ⟨10.1109/ICNF57520.2023.10472740⟩. ⟨hal-04440655⟩

Nasri Said, Kathia Harrouche, F Medjdoub, N. Labat, Jean-Guy Tartarin, et al.. Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. IEEE International Reliability Physics Symposium (IRPS 2023), Mar 2023, Monterey, CA, United States. ⟨10.1109/IRPS48203.2023.10117807⟩. ⟨hal-04125371⟩

Bastien Pinault, Jean-Guy Tartarin, Damien Saugnon, Rémy Leblanc. A Self-Reconfigurable Highly Linear and Robust X-Band MMIC GaN LNA. 18th European Microwave Integrated Circuits Conference (EuMIC 2023), Sep 2023, Berlin, Germany. pp.13-16, ⟨10.23919/EuMIC58042.2023.10288807⟩. ⟨hal-04494172⟩

Pinault Bastien, Jean-Guy Tartarin, Damien Saugnon, Leblanc Rémy. A new Method for Designing Robust Low Noise Amplifier. Space Microwave Week 2023, European Space Agency (ESA), May 2023, Noordwijk, Netherlands. ⟨hal-04142799⟩

2022

Articles dans une revue

Jean-Guy Tartarin, Éric Tournier, Christophe Viallon. Evolution Trends and Paradigms of Low Noise Frequency Synthesis and Signal Conversion Using Silicon Technologies. Electronics, 2022, 11 (5), pp.684. ⟨10.3390/electronics11050684⟩. ⟨hal-03705541⟩

Pré-publications, documents de travail

Bastien Pinault, Jean-Guy Tartarin, R Leblanc, A Jourier. Méthode de Conception Agile en Tension pour Amplificateur Faible Bruit Robuste. 2022. ⟨hal-03587960⟩

Bastien Pinault, Jean-Guy Tartarin, R Leblanc, A Jourier. Design Method for Reconfigurable Low Noise or Highly linear LNA. 2022. ⟨hal-03587892⟩

2021

Articles dans une revue

Mahmoud Abou Daher, Marie Lesecq, N. Defrance, Etienne Okada, Bertrand Boudart, et al.. Electrical and thermal analysis of AlGaN/GaN HEMTs transferred onto diamond substrate through an aluminum nitride layer. Microwave and Optical Technology Letters, 2021, 63 (9), pp.2376-2380. ⟨10.1002/mop.32919⟩. ⟨hal-03249292⟩

2020

Articles dans une revue

Mahmoud Abou Daher, Marie Lesecq, Pascal Tilmant, N. Defrance, Michel Rousseau, et al.. AlGaN/GaN high electron mobility transistors on diamond substrate obtained through aluminum nitride bonding technology. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 2020, 38 (3), pp.033201. ⟨10.1116/1.5143418⟩. ⟨hal-02929037⟩

Jean-Guy Tartarin, Oana Lazar, Axel Rumeau, Bernard Franc, Laurent Bary, et al.. Analysis Of Drain Current Transient Stability Of AlGaN/GaN HEMT stressed under HTOL & HTRB, By Random Telegraph Noise And Low Frequency Noise Characterizations. Microelectronics Reliability, 2020, 114, pp.113895. ⟨10.1016/j.microrel.2020.113895⟩. ⟨hal-03180595⟩

2019

Articles dans une revue

Jean-Guy Tartarin. Non-destructive techniques for evaluating the reliability of high frequency active devices. Microelectronics Reliability, 2019, 100-101, pp.113359. ⟨10.1016/j.microrel.2019.06.051⟩. ⟨hal-02388674⟩

Mohamed-Reda Irekti, Marie Lesecq, N. Defrance, Etienne Okada, Eric Frayssinet, et al.. 2 W / mm power density of an AlGaN/GaN HEMT grown on free-standing GaN substrate at 40 GHz. Semiconductor Science and Technology, 2019, 34 (12), pp.12LT01. ⟨10.1088/1361-6641/ab4e74⟩. ⟨hal-02929065⟩

Jacques Graffeuil, Laurent Escotte, Jean-Guy Tartarin. Impact of the Frequency Dependence of the Parasitic Admittance on the Diffusion Noise of a Diode Junction at Low Bias. IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5289-5294. ⟨10.1109/TED.2019.2947693⟩. ⟨hal-02388640⟩

Jean-Guy Tartarin, Damien Saugnon, Laurent Bary, Jacques Graffeuil. Secured Failure Analysis Methodology for Accurate Diagnostic of Defects in GaN HEMT Technologies. International Journal of Information Science & Technology, 2019, 3 (1), pp.3-12. ⟨hal-02086969⟩

Communications dans un congrès

Boris Berthelot, Jean-Guy Tartarin, Christophe Viallon, Remy Leblanc, Hassan Maher, et al.. GaN MMIC Differential Multi-function Chip for Ka-Band Applications. 2019 IEEE/MTT-S International Microwave Symposium - IMS 2019, Jun 2019, Boston, United States. pp.1399-1402, ⟨10.1109/MWSYM.2019.8701085⟩. ⟨hal-02315126⟩

Jacques Graffeuil, Laurent Escotte, Jean-Guy Tartarin. Low Frequency Noise Deviation from Schottky theory in p-n junctions. IEEE International Conference on Noise and Fluctuation (ICNF 2019), Jun 2019, Neuchatel, Switzerland. https://icnf2019.epfl.ch/wp-content/uploads/2019/10/ICNF2019_Proceedings.pdf. ⟨hal-02315085⟩

2018

Communications dans un congrès

Jean-Guy Tartarin, Damien Saugnon, Bernard Franc, H. Maher, F. Boone. Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.17-20, ⟨10.23919/EuMIC.2018.8539919⟩. ⟨hal-02088200⟩

Jean-Guy Tartarin, Damien Saugnon, Jacques Graffeuil, Laurent Bary. Methodology for accurate diagnostic of defects in III-N HEMT technologies Non-destructive and destructive experimental tools-electrical and T-CAD models. IEEE Mediterranean Electrotechnical Conference (IEEE MELECON), May 2018, Marrakech, Morocco. 5p. ⟨hal-01877587⟩

2017

Articles dans une revue

Jean-Guy Tartarin, Oana Lazar, Damien Saugnon, B. Lambert, C. Moreau, et al.. Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. Microelectronics Reliability, 2017, 76-77, pp.344-349. ⟨10.1016/j.microrel.2017.07.057⟩. ⟨hal-02088137⟩

Communications dans un congrès

Jean-Guy Tartarin, Damien Saugnon, Oana Lazar, Guillaume Maillot, Laurent Bary. Understanding traps locations and impact on AlGaN/GaN HEMT by LFN noise & transient measurements, and T-CAD simulations. 2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-4, ⟨10.1109/ICNF.2017.7985988⟩. ⟨hal-02087930⟩

Jean-Guy Tartarin, Oana Lazar, Damien Saugnon, B Lambert, C Moreau, et al.. Gate Defects Analysis in AlGaN/GaN Devices by Mean of Accurate Extraction of the Schottky Barrier Height, Electrical Modeling, T-CAD Simulations and TEM Imaging. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France. ⟨hal-02088188⟩

2016

Communications dans un congrès

Jean-Guy Tartarin. GaN Technologies: From The Improvement Of Device Reliability To The Design Of Robust High Frequency Circuits. World Congress of Advanced Materials (WCAM 2016 5th BIT congress), Jun 2016, Chongqing, China. ⟨hal-02088233⟩

Jean-Guy Tartarin, Séraphin Dieudonné Nsele, S Piotrowitcz, S Delage. Self-Biasing Effects Induced by RF Step-Stress in Ka-Band LNAs based on InAlN/GaN HEMT Technology. 11th European Microwave Integrated Circuits Conference (EuMIC 2016), Oct 2016, Londres, United Kingdom. ⟨10.1109/EuMIC.2016.7777596⟩. ⟨hal-02088210⟩