Simulation of processes and formation of interface layers
The main objective of these activities is to understand the formation of interface layers in growth processes. We explore the relationships between material composition and structure, and the technological parameters of the processes used.
Simulation of Technological Deposition Processes
Atomic-scale modeling of technological processes is crucial for optimizing material performance, preventing defects during manufacturing, and accelerating the development of new technologies. Providing a detailed understanding of atomic interactions, this approach guides precise electronic component design, facilitates the discovery of new materials, and opens innovative perspectives, especially in the fields of nanotechnology.
Methodological Developments/Tools
- Multi-physics Kinetic Monte Carlo
- Coupling of atomistic methodologies: DFT/ARTn
- Off-lattice atome resolved kMC
- Self-learning Kinetic Monte Carlo
Collaborations
Normand MOUSSEAU, Université de Montréal, Montréal, Canada
Layla MARTIN SAMOS, CNR-IOM, Trieste, Italie
Miha GUNDE, Ruđer Bošković Institute, Zagreb, Croatie
STMicroelectronics, Crolles
