We employ atomic-scale modeling and simulation to assess the long-term reliability of devices and ensure their performance in real operational conditions. The longevity of transistors and other components, such as image sensors, can be compromised by impurities and point defects inherent in semiconductor materials. These defects significantly disrupt the crystalline structure, acting as charge traps and altering electrical properties, leading to a gradual degradation in material performance. We investigate defects formed during manufacturing processes and under irradiation for nuclear and space applications.

Using atomic-scale numerical methods like ab initio calculations and molecular dynamics, we characterize the structure and stability of semiconductor materials and defects, understanding their impact on electronic properties. This integrated approach provides in-depth insights into the underlying mechanisms of long-term reliability in electronic components, paving the way for continuous advancements in this strategic field

Collaborations

CEA-DAM - Formation of defects and their characterization in Si, Ge, SiGe, GaN

STMicroelectronics, Tours - Data collection for the parametrization of TCAD codes for GaN