Very high frequencies technologies

Study of GaN HF devices and circuits, of robust and reconfigurable MMIC circuits and of 6G emerging technologies

Study and modelling of HF GaN devices

Advanced metrology and modelling of emerging RF devices chains: development of non-invasive expert measurement techniques for the electrical analysis of defects in transistors and diodes operating at very high frequencies (LF and RF electrical noise, pulsed PIV [S] parameters measurements, NF50 and 4 noise parameter measurements, transient measurements, RF and thermal stress bench).
Analysis of failure mechanisms in GaN technologies TRL3-4 (technological process optimisation) and TRL 5-6 (analysis of SOA and V-cycle technological corrections). Case studies and reliability studies under DC and RF thermal-electrical constraints.
Development of electrical and RF noise models of GaN HEMT devices for "receivers robust to electro-magnetic aggression" applications (jamming and electronic warfare) in CW and pulsed mode, and under RF stress constraints.

New robust LNA topologies in Nitride technology, self-reconfigurable and highly integrated for conventional and AESA antennas . Simulation and design of new MMIC receiver topologies for Telecom (CW) and Radar (pulsed) applications. Prediction of operational safety areas (SOA).
Design of high spectral purity and high output power GaN hybrid and MMIC oscillators. Predictive evaluation of SOAs using simulation and modelling of noise sources during the mission.
Design of agile digitally controlled MMIC chips for controlling active antennas and decoys in electronic warfare: 11-bit broadband GaN attenuator/phase shifter corechip (differential and single-ended 30-40 GHz version).

Measurement and analysis of LF electrical noise signatures to improve HBT GaAs on Silicon technologies beyond THz (LFN noise platform, Keysight accredited European centre of expertise).
EM and HF electrical analyses of the structures hosting the active devices under test (HBTs and EB diodes) to improve the efficiency of measurements and techniques for extracting intrinsic models.
Development of HF electrical models dedicated to the electrical and structural analysis of THz heterojunction bipolar transistor technologies.

Contact: Jean-Guy TARTARIN