The growth of vertical-cavity surface-emitting lasers (VCSELs) via molecular beam epitaxy (MBE) requires layer thickness tolerances of less than one percent in order to ensure optimal optoelectronic performance. Drifts in MBE growth parameters—which are frequent and difficult to predict—compromise the reproducibility and performance of the components. To address these challenges, we have developed an in-situ control method combining measurements of reflectivity and atomic absorption. This approach enables real-time monitoring and dynamic adjustment of growth parameters to significantly reduce the number of calibration growths and compensate for drifts. Here, we demonstrate the effectiveness of a control system for VCSEL growth without prior calibration of growth rates. This method opens up prospects for more robust fabrication that can be extended to complex photonic devices.