2025
Journal articles
Nasri Said, Damien Saugnon, K. Harrouche, F Medjdoub, N. Labat, et al.. Nonlinear modeling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: analysis and hard-SOA. Microelectronics Reliability, 2025, 169, pp.115742. ⟨10.1016/j.microrel.2025.115742⟩. ⟨hal-05065556⟩
Mélik Maksem, Adrien Bourgine, Kosseila Ait-Oukaci, Angélique Gillet, Thierry Leïchlé, et al.. Localized integration of iron-based nanoparticle micromagnets on planar inductors for RF applications. Journal of Magnetism and Magnetic Materials, 2025, 631, pp.173498. ⟨10.1016/j.jmmm.2025.173498⟩. ⟨hal-05249754⟩
Conference papers
Jean-Guy Tartarin, Damien Saugnon. Robustness of GaN LNAs under Ku-band jamming signal: understanding the weak point to design future robust LNAs. ESREF 2025 : 36th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 2025, Université de Bordeaux, ADERA, Oct 2025, Bordeaux, France. ⟨hal-05323114⟩
Jean-Guy Tartarin, Damien Saugnon. Robustness of GaAs and GaN LNAs in X-and Kuband: performances and strategies of protection under jamming or destructive signal. ICNF 2025, Jun 2025, Taormina (Sicile), Italy. ⟨hal-05354349⟩
2024
Conference papers
N. Said, Damien Saugnon, Kathia Harrouche, F Medjdoub, Nathalie Labat, et al.. Nonlinear modelling of AlN/GaN HEMT accounting for self-biasing effect during RF step stress: analysis and hard-SOA. 35th ESREF, Sep 2024, Parma (Italie), Italy. ⟨hal-05353524⟩
N. Said, Damien Saugnon, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, et al.. RF-Robustness enhancement in AlN/GaN HEMT through AlGaN Back-Barrier: nonlinear model analysis. 19th European Microwave Integrated Circuits Conference (EuMIC 2024), Sep 2024, Paris, France. pp.2-5, ⟨10.23919/EuMIC61603.2024.10732162⟩. ⟨hal-04765521⟩
2023
Journal articles
B. Pinault, Jean-Guy Tartarin, Damien Saugnon, R. Leblanc. Impact of RF stress on different topologies of 100 nm X-band robust GaN LNA. Microelectronics Reliability, 2023, Special issue of 34th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, ESREF 2023, 150, pp.115126. ⟨10.1016/j.microrel.2023.115126⟩. ⟨hal-04493506⟩
Conference papers
Jean-Guy Tartarin, Bastien Pinault, Damien Saugnon. Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICs. IEEE International Conference on Noise and Fluctuations, Chistoforos Theodorou, Oct 2023, Grenoble, France. ⟨10.1109/ICNF57520.2023.10472740⟩. ⟨hal-04440655⟩
Pinault Bastien, Jean-Guy Tartarin, Damien Saugnon, Leblanc Rémy. A new Method for Designing Robust Low Noise Amplifier. Space Microwave Week 2023, European Space Agency (ESA), May 2023, Noordwijk, Netherlands. ⟨hal-04142799⟩
Bastien Pinault, Jean-Guy Tartarin, Damien Saugnon, Rémy Leblanc. A Self-Reconfigurable Highly Linear and Robust X-Band MMIC GaN LNA. 18th European Microwave Integrated Circuits Conference (EuMIC 2023), Sep 2023, Berlin, Germany. pp.13-16, ⟨10.23919/EuMIC58042.2023.10288807⟩. ⟨hal-04494172⟩
2019
Journal articles
Jean-Guy Tartarin, Damien Saugnon, Laurent Bary, Jacques Graffeuil. Secured Failure Analysis Methodology for Accurate Diagnostic of Defects in GaN HEMT Technologies. International Journal of Information Science & Technology, 2019, 3 (1), pp.3-12. ⟨hal-02086969⟩
2018
Conference papers
Jean-Guy Tartarin, Damien Saugnon, Bernard Franc, H. Maher, F. Boone. Fully Automated RF-Thermal Stress Workbench with S-Parameters Tracking for GaN Reliability Analysis. 13th European Microwave Integrated Circuits Conference (EuMIC 2018), Sep 2018, Madrid, Spain. pp.17-20, ⟨10.23919/EuMIC.2018.8539919⟩. ⟨hal-02088200⟩
Jean-Guy Tartarin, Damien Saugnon, Jacques Graffeuil, Laurent Bary. Methodology for accurate diagnostic of defects in III-N HEMT technologies
Non-destructive and destructive experimental tools-electrical and T-CAD models. IEEE Mediterranean Electrotechnical Conference (IEEE MELECON), May 2018, Marrakech, Morocco. 5p. ⟨hal-01877587⟩
PhD thesis, HDR
Damien Saugnon. Contribution aux analyses de fiabilité des transistors HEMTs GaN : exploitation conjointe du modèle physique TCAD et des stress dynamiques HF pour l'analyse des mécanismes de dégradation. Electromagnétisme. Université Paul Sabatier - Toulouse III, 2018. Français. ⟨NNT : 2018TOU30164⟩. ⟨tel-01922315v2⟩
2017
Journal articles
Jean-Guy Tartarin, Oana Lazar, Damien Saugnon, B. Lambert, C. Moreau, et al.. Gate defects analysis in AlGaN/GaN devices by mean of accurate extraction of the Schottky Barrier Height, electrical modelling, T-CAD simulations and TEM imaging. Microelectronics Reliability, 2017, 76-77, pp.344-349. ⟨10.1016/j.microrel.2017.07.057⟩. ⟨hal-02088137⟩
Conference papers
Jean-Guy Tartarin, Damien Saugnon, Oana Lazar, Guillaume Maillot, Laurent Bary. Understanding traps locations and impact on AlGaN/GaN HEMT by LFN noise & transient measurements, and T-CAD simulations. 2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-4, ⟨10.1109/ICNF.2017.7985988⟩. ⟨hal-02087930⟩
Jean-Guy Tartarin, Oana Lazar, Damien Saugnon, B Lambert, C Moreau, et al.. Gate Defects Analysis in AlGaN/GaN Devices by Mean of Accurate Extraction of the Schottky Barrier Height, Electrical Modeling, T-CAD Simulations and TEM Imaging. 28th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2017), Sep 2017, Bordeaux, France. ⟨hal-02088188⟩
