2026

Journal articles

Vincent Goiffon, Clémentine Durnez, Antoine Jay, Ali Jouni, Vera Kharchenkova, et al.. Gamma-Ray Induced Displacement Damage in Silicon Microvolumes: Single Defect Generation Rate and Random Telegraph Signal. IEEE Transactions on Nuclear Science, In press, pp.1-1. ⟨10.1109/TNS.2025.3648295⟩. ⟨hal-05524421⟩

Conference papers

Guilhem Almuneau, Karim Ben Saddik, Pierre Gadras, Clara Cornille, Armel Descamps-Mandine, et al.. Molecular Beam Epitaxial Growth of Monolithic VCSELs on Germanium and Silicon. 30th International Semiconductor Laser Conference, Tampere University, Jun 2026, Tampere, Finland. ⟨hal-05561728⟩

Preprints, Working Papers, ...

Karim Ben Saddik, Alexandre Arnoult, Pierre Gadras, Stéphane Calvez, Léo Bourdon, et al.. 940-nm VCSELs grown by molecular beam epitaxy on Ge(001). 2026. ⟨hal-05466020v2⟩

2025

Journal articles

Richard Monflier, Richard Daubriac, Mahmoud Haned, Toshiyuki Tabata, François Olivier, et al.. Impact of impurities on leakage current induced by High-Energy Density Pulsed Laser Annealing in Si diodes. IEEE Transactions on Electron Devices, 2025, 72 (11), pp.5860 - 5867. ⟨10.1109/TED.2025.3614566⟩. ⟨hal-04878600v2⟩

Conference papers

Rachel Grosset Darracq, Karine Isoird, Cédric Masante, Josiane Tasselli, Daniel Rouly, et al.. Fabrication et caractérisation de diodes Schottky diamant haute tension protégées par plaque de champ avec empilement Al2O3 /Si3N4. SGE 2025 - Symposium de Génie Électrique, cnrs, ups, Jul 2025, Toulouse, France. ⟨hal-05506473⟩

Other documents

Rachel Grosset Darracq, Karine Isoird, Cédric Masante, Josiane Tasselli, Daniel Rouly, et al.. Fabrication et caractérisation de diodes Schottky 1 kV avec protection par plaque de champ en Al2O3 /Si3N4. Journée Scientifique PEPR Électronique 2025, Mar 2025, Paris, France. 2025. ⟨cea-05066374⟩

2024

Journal articles

Lucien Ghizzo, Gérald Guibaud, Christophe de Nardi, François Jamin, Vanessa Chazal, et al.. Localization and Physical Analysis of Defects in Degraded Power HEMT p-GaN Transistors Stressed with DC Voltage Surge and Voltage with Switching Stress. Journal of Failure Analysis and Prevention, 2024, 24 (5), pp.2221-2231. ⟨10.1007/s11668-024-02038-x⟩. ⟨hal-04752825⟩

Benjamin Paret, Richard Monflier, Philippe Menini, Thierry Camps, Yohann Thimont, et al.. Study of the Influence of Thermal Annealing of Ga-Doped ZnO Thin Films on NO2 Sensing at ppb Level. Chemosensors, 2024, 13 (1), pp.1. ⟨10.3390/CHEMOSENSORS13010001⟩. ⟨hal-04871208⟩

Mohamed Ali Khaled, Leonardo Cancellara, Salima Fekraoui, Richard Daubriac, François Bertran, et al.. Large-Scale Epitaxial Integration of Single-Crystalline BiSb Topological Insulator on GaAs (111)A. ACS Applied Electronic Materials, 2024, 6 (5), pp.3771-3779. ⟨10.1021/acsaelm.4c00400⟩. ⟨hal-04584442⟩

Conference papers

Juan Esteban Montoya Cardona, Sylvain Joblot, Pierre Kermagoret, Grégoire Ducotey, Stéphane Hardillier, et al.. Effect of Metallic Ion Implantation on Dark Current Distributions of Silicon-Based CMOS Image Sensors. 2024 IEEE SENSORS, Oct 2024, Kobe, Japan. ⟨10.1109/SENSORS60989.2024.10784529⟩. ⟨hal-04888080⟩

Juan Esteban Montoya Cardona, Sylvain Joblot, Richard Monflier, Éric Imbernon, Aubin Antonsanti, et al.. Detection of Neutron Irradiation-Induced Crystal Defects in Silicon with Photoluminescence, Deep Level Transient Spectroscopy and Dark Current Measurements on CMOS Image Sensors. RADiation Effects on Components and Systems, Sep 2024, Maspalomas, Spain. ⟨hal-04931209⟩

Salima Fekraoui, Ali Khaled Mohamed, Richard Daubriac, Quentin Gravelier, Richard Monflier, et al.. Characterization of epitaxial Bi1-xSbx topological insulator thin films on GaAs(111) substrates. Journées de la Matière Condensée 2024, Société Française de Physique, Oct 2024, Marseille, France. ⟨hal-04946094⟩

2023

Journal articles

P.L. Julliard, A. Johnsson, N. Zographos, R. Demoulin, Richard Monflier, et al.. Prediction of the evolution of defects induced by the heated implantation process: Contribution of kinetic Monte Carlo in a multi-scale modeling framework. Solid-State Electronics, 2023, 200, pp.108521. ⟨10.1016/j.sse.2022.108521⟩. ⟨hal-03867418⟩

Conference papers

Vidushi Singh, Richard Monflier, Nicolas Mauran, Alain Estève, Carole Rossi. Self-Propagating Reaction Mechanisms in TiB2 Integrated Al/CuO Nanothermites. 2023 MRS Fall Meeting & Exhibit, Materials Research Society, Nov 2023, Boston (MA), United States. ⟨hal-04493934⟩

L. Ghizzo, G. Guibaud, C. de Nardi, F. Jamin, V. Chazal, et al.. Backside Fault Localization and Defect Physical Analysis of Degraded Power HEMT p-GaN Transistors Stressed in DC and AC Switching Modes. 49th International Symposium for Testing and Failure Analysis ISTFA 2023), Nov 2023, Phoenix, United States. pp.491-499, ⟨10.31399/asm.cp.istfa2023p0491⟩. ⟨hal-04307540⟩

Marina Ruggeri, Patrick Calenzo, Frédéric Morancho, Lia Masoero, Rosalia Germana, et al.. Investigation of BV dss instability in trench power MOSFET through DLTS, electrical characterization and TCAD simulations. 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD 2023), May 2023, Hong Kong, China. pp.36-39, ⟨10.1109/ISPSD57135.2023.10147489⟩. ⟨hal-04141241⟩

2022

Journal articles

Dima Sadek, Richard Daubriac, Corentin Durand, Richard Monflier, Quentin Gravelier, et al.. Structural and Electrical Characterizations of BiSb Topological Insulator Layers Epitaxially Integrated on GaAs. Crystal Growth & Design, 2022, 22 (8), pp.5081-5091. ⟨10.1021/acs.cgd.2c00585⟩. ⟨hal-03775836⟩

Nicolas Chery, Meiling Zhang, Nicolas Mallet, Grégory Seine, Vincent Paillard, et al.. Study of recrystallization and activation processes in thin and highly doped silicon-on-insulator layers by nanosecond laser thermal annealing. Journal of Applied Physics, 2022, 131 (6), pp.014008. ⟨10.1063/5.0073827⟩. ⟨hal-04236606⟩

Eléna Bedel-Pereira, Julien Bassaler, Hugo Laval, J Holec, Richard Monflier, et al.. Benzohexacene guide in accurate determination of field effect carrier mobilities in long acenes. RSC Advances, 2022, 12 (2), pp.671 - 680. ⟨10.1039/d1ra07808a⟩. ⟨hal-03529654⟩

2021

Journal articles

Richard Monflier, Toshiyuki Tabata, Hiba Rizk, Julien Roul, Karim Huet, et al.. Investigation of oxygen penetration during UV Nanosecond Laser Annealing of Silicon at high energy densities. Applied Surface Science, 2021, 536, pp.149071. ⟨10.1016/j.apsusc.2021.149071⟩. ⟨hal-03098053⟩

Jean-Marie Poumirol, Clément Majorel, Nicolas Chery, Christian Girard, Peter Wiecha, et al.. Hyper-doped silicon nanoantennas and metasurfaces for tunable infrared plasmonics. ACS photonics, 2021, 8 (5), pp.1393-1399. ⟨10.1021/acsphotonics.1c00019⟩. ⟨hal-03040170⟩

Maxime Levillayer, Sophie Duzellier, I. Massiot, Thierry Nuns, Christophe Inguimbert, et al.. Degradation study of InGaAsN PIN solar cell under 1 MeV electrons irradiation. IEEE Transactions on Nuclear Science, 2021, 68 (8), pp.1694 - 1700. ⟨10.1109/TNS.2021.3068044⟩. ⟨hal-03012605⟩

Conference papers

Fuccio Cristiano, Richard Monflier, Richard Daubriac, Rémi Demoulin, Emmanuel Scheid, et al.. Stress relaxation and dopant activation in nsec laser annealed SiGe. IWJT - International Workshop on Junction Technology, Jun 2021, Kyoto (on line), Japan. ⟨10.23919/IWJT52818.2021.9609361⟩. ⟨hal-03449341⟩

2019

Journal articles

Richard Monflier, Mathieu Thene, Ludovic Salvagnac, Bernard Franc, Eléna Bedel-Pereira, et al.. Magnetic Field Effects in X-Ray Damaged NPB and MADN OLEDs. IEEE Transactions on Magnetics, 2019, 55 (2), pp.1-4. ⟨10.1109/TMAG.2018.2856590⟩. ⟨hal-04709565⟩

PhD thesis, HDR

Richard Monflier. Etude des défauts induits par recuit laser excimère dans le silicium. Micro et nanotechnologies/Microélectronique. Université Paul Sabatier - Toulouse III, 2019. Français. ⟨NNT : 2019TOU30067⟩. ⟨tel-02162058v2⟩

2018

Journal articles

Richard Daubriac, Emmanuel Scheid, Hiba Rizk, Richard Monflier, Sylvain Joblot, et al.. A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si 1− x Ge x and Si layers. Beilstein Journal of Nanotechnology, 2018, 9, pp.1926 - 1939. ⟨10.3762/bjnano.9.184⟩. ⟨hal-01921179⟩

Conference papers

Richard Monflier, Hiba Rizk, Toshiyuki Tabata, Julien Roul, Simona Boninelli, et al.. Defects Investigation in Nanosecond laser Annealed Crystalline Silicon: Identification and Localization. 22nd International Conference on Ion Implantation Technology, Sep 2018, Würzburg, Germany. pp.4, ⟨10.1109/IIT.2018.8807933⟩. ⟨hal-01803955v2⟩

Jean-François Bobo, Richard Monflier, Ludovic Salvagnac, Eléna Bedel-Pereira, Isabelle Séguy. Influence of in-situ x-ray exposure on the magnetotransport properties of NPB and MADN based blue OLED structures. 14th International Conference on Organic Electronics (ICOE 2018), Jun 2018, Bordeaux, France. ⟨hal-02140836⟩

2017

Journal articles

Richard Monflier, Karine Isoird, Alain Cazarré, Josiane Tasselli, Alexandra Servel, et al.. Diamond Schottky diodes operating at 473 K. EPE Journal - European Power Electronics and Drives, 2017, 27 (3), pp.118-124. ⟨10.1080/09398368.2017.1388625⟩. ⟨hal-01618095⟩

Conference papers

Richard Monflier, Toshiyuki Tabata, Mégane Turpin, Amin Benyoucef, Fuccio Cristiano, et al.. Evaluating depth distribution of excimer laser induced defects in silicon using micro-photoluminescence spectroscopy. MRS Fall Meeting , MRS, Nov 2017, Boston, United States. ⟨hal-01555348⟩

Richard Monflier, Amin Benyoucef, Mégane Turpin, Fuccio Cristiano, Eléna Bedel-Pereira. Etude des défauts induits par recuit laser excimer sur silicium. 20èmes Journées Nationales du Réseau Doctoral en Micro-nanoélectronique (JNRDM 2017), Nov 2017, Strasbourg, France. 1p. ⟨hal-01690886⟩

2016

Conference papers

Richard Monflier, Toshiyuki Tabata, Fuccio Cristiano, Inès Toque-Tresonne, Fulvio Mazzamuto, et al.. Defect investigation of excimer laser annealed silicon. IEEE Nanotechnology Materials and Devices Conference, Oct 2016, Toulouse, France. ⟨hal-01343978v3⟩

Richard Monflier, Karine Isoird, Alain Cazarré, Josiane Tasselli, Alexandra Servel, et al.. Diodes Schottky diamant fonctionnant à 200°C. Symposium de Génie Electrique, G2Elab, Jun 2016, Grenoble, France. ⟨hal-01245628v2⟩