Annuaire - LAAS-CNRS

Laurent Bary

Laurent Bary

Support team

I2C : Instrumentation design and Characterization

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Publications

Latest publications

2020

Journal articles

Jean-Guy Tartarin, Oana Lazar, Axel Rumeau, Bernard Franc, Laurent Bary, et al.. Analysis Of Drain Current Transient Stability Of AlGaN/GaN HEMT stressed under HTOL & HTRB, By Random Telegraph Noise And Low Frequency Noise Characterizations. Microelectronics Reliability, 2020, 114, pp.113895. ⟨10.1016/j.microrel.2020.113895⟩. ⟨hal-03180595⟩

2019

Journal articles

Jean-Guy Tartarin, Damien Saugnon, Laurent Bary, Jacques Graffeuil. Secured Failure Analysis Methodology for Accurate Diagnostic of Defects in GaN HEMT Technologies. International Journal of Information Science & Technology, 2019, 3 (1), pp.3-12. ⟨hal-02086969⟩

2018

Conference papers

Jean-Guy Tartarin, Damien Saugnon, Jacques Graffeuil, Laurent Bary. Methodology for accurate diagnostic of defects in III-N HEMT technologies Non-destructive and destructive experimental tools-electrical and T-CAD models. IEEE Mediterranean Electrotechnical Conference (IEEE MELECON), May 2018, Marrakech, Morocco. 5p. ⟨hal-01877587⟩

2017

Conference papers

Jean-Guy Tartarin, Damien Saugnon, Oana Lazar, Guillaume Maillot, Laurent Bary. Understanding traps locations and impact on AlGaN/GaN HEMT by LFN noise & transient measurements, and T-CAD simulations. 2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-4, ⟨10.1109/ICNF.2017.7985988⟩. ⟨hal-02087930⟩

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