Research activity





Guilhem Larrieu received the B.Sc. degree in material science and the Ph.D. degree in electronics from the University of Lille, Villeneuve d’Ascq, France, in 2000 and 2004, respectively. In 2005, he was a Postdoctoral Fellow with the University of Texas, Arlington. At the end of 2005, he was hired by a laboratory at the Institute for Electronics, Microelectronics and Nanotechnology, Centre National de la Recherche Scientifique (CNRS), Lille, France, as a Senior Independent Scientist (CR CNRS), working on dopant segregation technology for metallic source/drain field-effect transistors. Finally, in 2010, he moved to the Laboratory for Analysis and Architecture of Systems, CNRS, Université de Toulouse, Toulouse, France where he established a new research axis on nanowire arrays for electronics and sensing applications, which includes silicon- and III–V-based nanostructures and nanodevices ranging from the material investigation (chemical/ physical properties) to the processing, integration, and characterization of the related devices.


Sébastien Plissard studied physics at the Grenoble Institute of Technology in France and obtained a PhD degree from CEA-LETI in 2007. After a postdoctoral term in the Institute of Electronics, Microelectronics and Nanotechnology (CNRS), he moved to TU/ Eindhoven and TU/ Delft in 2010. End of 2013, he was hired at the Laboratory for Analysis and Architecture of Systems (CNRS) in Toulouse (France), as a Senior Independent Scientist (CR CNRS), working on nanoscale semiconductor epitaxy. His interests focus mainly on crystal growth and characterization of III–V and II–VI semiconductors: 2D and nanowires for nanoelectronic and optoelectronic applications.



Youssouf Guerfi

Naiara Klein (international thesis with CBPF - Rio Janeiro)

Adrien Casanova (Co-supervised with NBS)

Brieux Durand (Co-supervised with MICA)



Maéva Collet, PhD 2013, now Assistant professor at IUT Toulon.

Xiang-Lei Han, PhD. 2011 (IEMN) now R&D Engineer at HUAWEI


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