Doping engineering in advanced MOS
- Reseach activities
The last decade has seen the appearance of new MOS device architectures that have been proposed to enable the required device miniaturisation as well as the integration of new functionalities.
Each one of them poses specific doping challenges not only in the source/drain region but also in other parts of the device. This has resulted in the development of new implant and annealing process solutions for which, in several cases, a considerable amount of knowledge is still missing.
The major problems related to the use of ion implantation are the formation of extended defects and their interaction with dopants during annealing, leading to dopant diffusion/activation anomalies and to unwanted high leakage currents.
Our research activity in this field has addressed the following issues:
Defects electrical impact