Spin-cross over materials for MEMS transduction
The goal of this project is to integrate spin crossover (SCO) thin films into MEMS/NEMS devices for their use as transducing elements but also with the aim to better characterize their mechanical properties. SCO are known to display a reversible switching between their low spin (LS) and high spin (HS) electronic configurations, which can be induced by different physical and chemical stimuli (temperature, pressure, light irradiation, etc.). This electronic switching is associated with a significant change in molecular volume (up to 15%), which can be harnessed to produce useful mechanical work. We have achieved the integration of ≈200 nm thick [Fe(H2B(pz)2)2(phen)] films deposited by thermal evaporation onto freestanding silicon bridges and cantilevers. The light-induced excited spin-state trapping was demonstrated by tracking the MEMS resonance frequency using piezoresistive detection.
- A. Bousseksou, G. Molnár, LCC, Toulouse
Selective list of publications:
- M. D. Manrique-Juarez, S. Rat, F. Mathieu, D. Saya, I. Séguy, T. Leïchlé, L. Nicu, L. Salmon, G. Molnár, and A. Bousseksou, "Microelectromechanical systems integrating molecular spin crossover actuators", Applied Physics Letters, 109, 061903 (2016)
M. D. Manrique-Juarez, F. Mathieu, V. Shalabaeva, J. Cacheux, S. Rat, L. Nicu, T. Leïchlé, L. Salmon, G. Molnár, and A. Bousseksou, "A Bistable Microelectromechanical System Actuated by Spin Crossover Molecules", Angewandte Chemie International Edition, 56, 8074-8078 (2017)