Molecular Beam Epitaxy

Technical staff

  • Alexandre ARNOULT (IR - Area responsible)
  • Guy LACOSTE (IE)

    The MBE area includes means of elaboration of GaAs based materials III/V.
    The two frames of molecular beam epitaxy, connected by ultra high vacuum, and the means of characterization dedicated, are integrated into a class 10000 - ISO7 room .


    Bâti RIBER 2300

    Effusion cells :
    Ga, In, Al
    H plasma c
    RHEED 20kV                           
    Spectromètre de masse                                            
    Ionic pump
    Turbo pump







    Bâti RIBER 32P 

    Effusion cells : 
    Ga, In, 2xAl 
    As (cracker) 
    Si, Be 
    N plasma cell 
    RHEED 10kV                        
    Mass spectrometer 
    Dynamic accordable interferometry  Low temperature pyrometer     
    Ionic pump
    Cryo pump

    Bâti RIBER MBE 412 
    (new equipment since 2012) 


    Effusion cells :  
    2xGa, 2xAl, 2xIn 
    2x(As) cracker 
    Sb, Si, C (CBr4)  
    Valved N plasma cell               
    RHEED 12kV + KSA400   
    KSA BandiT 
    Mass spectrometer 
    Ionic pump 
    Cryo pump 

    Cluter robot : 
    Load / unload
    High temperature degasss

    Dedicated characterization equipments

    Auger Riber under UHV

    Ambiant temperature photoluminescence

    High Resolution X-Ray diffractometer
    BRUKER D8 Discover (Da Vinci  design)

    Know how

    Epitaxy of Photonic components : 

    • Lasers quantum well GaAs/AlGaAS, GaInAs–alinas / GaAs, GaInAsN/GaAs
    • Lasers emitting surface (VCSEL)
    • Lasers Photonic crystals

    Epitaxy on surfaces (100), (111) A, (111) B, (110)
    Epitaxy of nitrided alloys on surfaces of different orientations. 
    Epitaxy of quantum boxes SK InAs/GaAs
    Surface decontamination and recovery of epitaxy