10th International Workshop on Bismuth-Containing Semiconductors
The 10th International Workshop on Bismuth-Containing Semiconductors will be held in Toulouse, France, from July 21 to July 24, 2019 at LAAS-CNRS.
This workshop will focus on the new classes of semiconductors, thermoelectric materials and topological insulators, all containing bismuth, and will treat theory, epitaxial growth, characterization (optical, electrical and structural) of these novel materials, as well as their devices devoted to applications such as low power and energy efficient photonics, electronics, photovoltaics, thermoelectrics, and spintronics.
The goal of this workshop is to address the issues and boost the development of these emerging compounds taking benefit from the properties of bismuth. This interdisciplinary meeting gathers physicists, chemists, materials scientists, and engineers, to address this very active research area, in a condensed three-day workshop.
The International Workshop on Bismuth-Containing Semiconductors is an informal workshop meeting. Founded by the participants of the Materials World Network “III-V Bismide Materials for IR and Mid IR Semiconductors”, this workshop is organized mid-July every year. The founders have continued to serve as the steering committee to guide the workshop.