2022
Communications dans un congrès
Victor Hui, Agathe André, Alexandre Arnoult, P Besson, Christophe Dubarry, et al.. Transfer of AlGaAs/GaAs crystalline Bragg mirror from a GaAs substrate to a fused silica substrate by direct bonding. SPIE Photonics Europe, Apr 2022, Strasbourg, France. ⟨cea-03735678⟩
2021
Communications dans un congrès
Alexandre Arnoult, J Colin, C Cornille, K Louarn, L Marigo-Lombart, et al.. In-situ magnification inferred curvature measurement applied to dilute bismide growth. 21st International Conference on Molecular Beam Epitaxy (ICMBE 2021), Sep 2021, Mexico (virtual), Mexico. ⟨hal-03358732⟩
2020
Communications dans un congrès
Maxime Levillayer, Sophie Duzellier, Hélène Carrère, Inès Massiot, Thierry Nuns, et al.. Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application. 47th IEEE Photovoltaic Specialists Conference (PVSC 47), IEEE, Jun 2020, Calgary (virtual), Canada. ⟨10.1109/PVSC45281.2020.9300570⟩. ⟨hal-03012129⟩
2019
Articles dans une revue
Clara Cornille, Alexandre Arnoult, Quentin Gravelier, Chantal Fontaine. Links between bismuth incorporation and surface reconstruction for GaAsBi growth probed by in situ measurements. Journal of Applied Physics, 2019, Special Topic on Highly Mismatched Semiconductors Alloys: from Atoms to Devices, 126 (9), pp.093106. ⟨10.1063/1.5111932⟩. ⟨hal-02281696⟩
Kevin Louarn, Y Claveau, Chantal Fontaine, Alexandre Arnoult, Ludovic Marigo-Lombart, et al.. Thickness limitation of band to band tunneling process in InGaAs/GaAsSb type-II tunnel junctions designed for multijunction solar cells. ACS Applied Energy Materials, 2019, 2 (2), pp.1149-1154. ⟨10.1021/acsaem.8b01700⟩. ⟨hal-01968187⟩
Communications dans un congrès
Maxime Levillayer, Guilhem Almuneau, Inès Massiot, Alexandre Arnoult, Chantal Fontaine, et al.. Développement de sous-cellules pin InGaAsN à 1 eV pour intégration en MJSC et applications spatiales. Journées Nationales du Photovoltaïque, Dec 2019, Dourdan, France. ⟨hal-02382557⟩
2018
Articles dans une revue
Kevin Louarn, Yann Claveau, Ludovic Marigo-Lombart, Chantal Fontaine, Alexandre Arnoult, et al.. Effect of low and staggered gap quantum wells inserted in GaAs tunnel junctions. Journal of Physics D: Applied Physics, 2018, 51 (14), pp.145107. ⟨10.1088/1361-6463/aab1de⟩. ⟨hal-01761772⟩
Sawsen Azaizia, Andrea Balocchi, Simone Mazzucato, Fabian Cadiz, S Beato de Le Salle, et al.. Bismuth content dependence of the electron spin relaxation time in GaAsBi epilayers and quantum well structures. Semiconductor Science and Technology, 2018, 33 (11), pp.114013. ⟨10.1088/1361-6641/aae354⟩. ⟨hal-01944345⟩
Communications dans un congrès
Guilhem Almuneau, Stéphane Calvez, Gael Lafleur, Chantal Fontaine, Alexandre Arnoult, et al.. Selective oxidation of AlGaAs for confinement in III-V photonic devices. 16th NAMIS workshop ” Micro- and nanosystems, large area electronics and biofunctionalities towards novel integrated smart systems“, Jun 2018, Oulu, Finland. 36p. ⟨hal-01855298⟩
Autres documents
Kevin Louarn, Yann Claveau, Chantal Fontaine, Alexandre Arnoult, Ludovic Marigo-Lombart, et al.. Jonctions tunnel à très hautes performances à base d'hétérostructures de type II sur GaAs pour les cellules solaires multijonction. Jounées Nationales du Photovoltaïque (JNPV 2018), Dec 2018, Dourdan, France. 2018. ⟨hal-01980237⟩
2017
Articles dans une revue
Kevin Louarn, Yann Claveau, Dimitri Hapiuk, Chantal Fontaine, Alexandre Arnoult, et al.. Multiband corrections for the semi-classical simulation of interband tunneling in GaAs tunnel junctions. Journal of Physics D: Applied Physics, 2017, 50 (38), pp.385109. ⟨10.1088/1361-6463/aa804e⟩. ⟨hal-01610949⟩
Stéphane Calvez, Pierre-François Calmon, Alexandre Arnoult, Olivier Gauthier-Lafaye, Chantal Fontaine, et al.. Low-loss buried AlGaAs/AlOx waveguides using a quasi-planar process. Optics Express, 2017, 25 (16), pp.19275 - 19275. ⟨10.1364/OE.25.019275⟩. ⟨hal-01611629⟩
Filip Dybała, J. Kopaczek, M. Gladysiewicz, E.-M. Pavelescu, C. Romanitan, et al.. Electromodulation spectroscopy of heavy-hole, light-hole, and spin-orbit transitions in GaAsBi layers at hydrostatic pressure. Applied Physics Letters, 2017, 111 (19), pp.192104. ⟨10.1063/1.5002622⟩. ⟨hal-01804772⟩
Communications dans un congrès
Ömer Dönmez, K. Kara, Ayse Erol, E. Akalin, Hajer Makhloufi, et al.. Influence of chemical process on structural and optical properties of as-grown and thermal annealed GaAsBi alloys. 8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany. ⟨hal-01947272⟩
Hélène Carrère, Andrea Balocchi, Xavier Marie, Alexandre Arnoult, Chantal Fontaine. Spin properties of dilute bismide alloys. The Physics of Optoelectronic Materials and Devices, In the memory of Prof. Naci Balkan, Mar 2017, Colchester, United Kingdom. ⟨hal-01947255⟩
Sawsen Azaizia, Andrea Balocchi, Delphine Lagarde, Alexandre Arnoult, Xavier Marie, et al.. Electron spin dynamics in GaAsBi quantum wells. SPIE Photonics WEST, Jan 2017, San Francisco, United States. ⟨hal-01947450⟩
Kevin Louarn, Yann Claveau, Alexandre Arnoult, Chantal Fontaine, Jonathan Colin, et al.. Pseudomorphic and metamorphic (Al)GaAsSb/(Al)InGaAs tunnel junctions for GaAs based Multi-Junction Solar Cells. European PV Solar Energy Conference and Exhibition, Sep 2017, Amsterdam, Netherlands. ⟨hal-01617434⟩
Sawsen Azaizia, Andrea Balocchi, Delphine Lagarde, Alexandre Arnoult, Chantal Fontaine, et al.. Electron spin polarization in GaAsBi quantum wells: Temperature dependence. 8th International Workshop on Bismuth-Containing Semiconductors, Prof. Kirstin Volz, Jul 2017, Marburg, Germany. ⟨hal-01947288⟩
Inès Massiot, Kevin Louarn, Chantal Fontaine, Sawsen Azaizia, Alexandre Arnoult, et al.. Comparaison d'absorbeurs à 1 eV à base de nitrure dilué accordés en maille sur GaAs: GaInAsN, GaAsSbN et GaInAsN(Bi). Journées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. ⟨hal-01780601⟩
Kevin Louarn, Yann Claveau, Alexandre Arnoult, Chantal Fontaine, Jonathan Colin, et al.. Jonctions tunnel AlGaAsSb/AlGaInAs accordées et relaxées sur substrat GaAs pour les applications photovoltaïques. Réunion plénière du GDR PULSE 2017 ( Processus Ultimes d'épitaxie de Semiconducteurs 2017), Oct 2017, Paris, France. ⟨hal-01610933⟩
Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, Yann Claveau, Ludovic Marigo-Lombart, et al.. Tampon graduel et jonction tunnel de type II relaxés sur GaAs pour sous cellules solaires métamorphiques à 1 eV. Journées Nationales du Photovoltaïque (JNPV), Dec 2017, Dourdan, France. pp.668 - 676. ⟨hal-01780593⟩
Autres documents
Kevin Louarn, Yann Claveau, Chantal Fontaine, Alexandre Arnoult, François Piquemal, et al.. Modélisation semiclassique du courant tunnel interbandes dans les jonctions tunnel GaAs. Journées Nationales du Photovoltaïque (JNPV 2017), Dec 2017, Dourdan, France. 1p., 2017. ⟨hal-01780605⟩
Stéphane Calvez, Alexandre Arnoult, Pierre-François Calmon, Aurélie Lecestre, Chantal Fontaine, et al.. Buried Waveguides using a Quasi-Planar Process. European Conference on Integrated Optics, Apr 2017, Eindhoven, Netherlands. 2017. ⟨hal-01768376⟩
2016
Articles dans une revue
Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, François Olivie, Guy Lacoste, et al.. Modelling of interband transitions in GaAs tunnel diode. Semiconductor Science and Technology, 2016, 31 (6), pp.06LT01. ⟨10.1088/0268-1242/31/6/06LT01⟩. ⟨hal-01857640⟩
Omer Donmez, Kamuran Kara, Ayse Erol, Elif Akalin, Hajer Makhloufi, et al.. Thermal annealing effects on optical and structural properties of GaBiAs epilayers: Origin of the thermal annealing-induced redshift in GaBiAs. Journal of Alloys and Compounds, 2016, 686, pp.976-981. ⟨10.1016/j.jallcom.2016.05.326⟩. ⟨hal-01943084⟩
Sawsen Azaizia, Andrea Balocchi, Hélène Carrère, Pierre Renucci, Thierry Amand, et al.. Control of the electron spin relaxation by the built-in piezoelectric field in InGaAs quantum wells. Applied Physics Letters, 2016, 108 (8), pp.082103. ⟨10.1063/1.4942600⟩. ⟨hal-01943076⟩
Communications dans un congrès
Sawsen Azaizia, Andrea Balocchi, Delphine Lagarde, Alexandre Arnoult, Xavier Marie, et al.. Carrier dynamics in GaAsBi quantum wells. 11th IEEE Nanotechnology Materials and Devices Conference (NMDC), Dr. K. Makasheva; Dr. C. Bonafos, Oct 2016, Toulouse, France. ⟨hal-01947430⟩
Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, Dimitri Hapiuk, Christophe Licitra, et al.. Type II heterojunction tunnel diodes based on GaAs for multi-junction solar cells: Fabrication, characterization and simulation. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.7777108, ⟨10.1109/NMDC.2016.7777108⟩. ⟨hal-01436488⟩
Stéphane Calvez, Alexandre Arnoult, Pierre-François Calmon, Aurélie Lecestre, Chantal Fontaine, et al.. Réalisation de guides d’onde enterrés avec un procédé quasi-planaire. Journées Nationales de l'Optique Guidée (JNOG), Jul 2016, Bordeaux, France. 3p. ⟨hal-01768308⟩
Sawsen Azaizia, Andrea Balocchi, Delphine Lagarde, Alexandre Arnoult, Xavier Marie, et al.. Carrier dynamics in GaAsBi quantum wells. International Workshop on Bismuth-Containing Semiconductors, Prof. Shumin Wang, Jul 2016, Shanghai, China. ⟨hal-01947423⟩
Chantal Fontaine, Sawsen Azaizia, Andrea Balocchi, Delphine Lagarde, Xavier Marie, et al.. Dilute Bismides for Optoelectronic Applications. The 8th International Workshop on Advanced Materials Science and Nanotechnology (IWAMSN2016), Dr Le Si Dang (IN, France); Prof. Kazuhito Hashimoto (NIMS, Japan); Prof. Nguyen Quang Liem (IMS, Vietnam), Nov 2016, Halong City, Vietnam. ⟨hal-01947444⟩
Andrea Balocchi, Sawsen Azaizia, Hélène Carrère, Thierry Amand, Alexandre Arnoult, et al.. Electrical control of the electron spin relaxation in (In)GaAs-based quantum wells. 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), Oct 2016, Toulouse, France. pp.1-2. ⟨hal-02052796⟩
Autres documents
Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, François Olivie, François Piquemal, et al.. Fabrication, caractérisation et simulation d’hétérojonctions tunnel et d’un absorbeur à 1eV à base de semiconducteurs III-V pour les cellules solaires multijonctions à haut rendement. 15eme Journees Nano, Micro et Optoelectronique (JNMO), May 2016, Les Issambres, France. 2016. ⟨hal-01857637⟩
Chantal Fontaine, Alexandre Arnoult, Fuccio Cristiano, Hélène Carrère, Sawsen Azaizia, et al.. Growth and properties of GaAsBi thin layers by molecular beam epitaxy. International Workshop on Bismuth-Containing Semiconductors, Jul 2016, Shanghai, China. 2016. ⟨hal-01947425⟩
Kevin Louarn, Chantal Fontaine, Alexandre Arnoult, François Olivie, Guy Lacoste, et al.. Fabrication, characterization and simulation of MBE-grown GaAs-based tunnel diodes with type I and type II heterojunctions for multijunction solar cells. 19th International Conference on Molecular Beam Epitaxy (MBE 2016), Sep 2016, Montpellier, France. 2p., 2016. ⟨hal-01857639⟩
2015
Articles dans une revue
O Donmez, A Erol, A Arikan, M Makhloufi, Alexandre Arnoult, et al.. Optical properties of GaBiAs single quantum well structures grown by MBE. Semiconductor Science and Technology, 2015, 30 (9), pp.094016. ⟨10.1088/0268-1242/30/9/094016⟩. ⟨hal-01943068⟩
Communications dans un congrès
Stéphane Calvez, Guilhem Almuneau, Youness Laaroussi, Fares Chouchane, Gael Lafleur, et al.. Technological Solutions for Embedded Oxide-based Confinement in New Photonic III-V Device Architectures. Asia Communications and Photonics Conference, Nov 2015, Hong Kong, China. ⟨10.1364/ACPC.2015.ASu1A.3⟩. ⟨hal-01768275⟩
Hélène Carrère, Aurélien Kuck, Hajer Makhloufi, Poonyasiri Boonpeng, Alexandre Arnoult, et al.. Experimental and Theoretical Determination of Electron g- Factor in GaAsBi Alloys. 6th international workshop on bismuth−containing semiconductors, Prof. Susan Babcock, Jul 2015, Madison, United States. ⟨hal-01947411⟩
Kevin Louarn, Alexandre Bounouh, Chantal Fontaine, François Olivie, Guillaume Libaude, et al.. III-V based Heterojunction Tunnel for Multijunction Solar Cells. PULSE summer school : Epitaxy promises and updates, Sep 2015, Porquerolles, France. ⟨hal-01857568⟩
Kevin Louarn, Alexandre Bounouh, Chantal Fontaine, François Olivie, Guillaume Libaude, et al.. Jonctions tunnels à base d'hétérostructures à semiconducteurs III-V pour les cellules solaires multi-jonctions à haut rendement. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. ⟨hal-01857570⟩
Autres documents
Alexandre Arnoult, Aurélien Kuck, Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, et al.. Spin properties of dilute bismides. 18th EuroMBE, Mar 2015, Canazei, Italy. 2015. ⟨hal-01947398⟩
Chantal Fontaine, Alexandre Arnoult, Patchareewan Prongjit, Simone Mazzucato, Hélène Carrère, et al.. Structural, optical and spin properties of GaAsBi alloys grown on (001)GaAs substrates by molecular beam epitaxy. 18th EuroMBE, Mar 2015, Canazei, Italy. 2015. ⟨hal-01947381⟩
2014
Articles dans une revue
Christopher Broderick, Simone Mazzucato, Hélène Carrère, Thierry Amand, Hajer Makhloufi, et al.. Anisotropic electron g factor as a probe of the electronic structure of GaBi x As 1 − x / GaAs epilayers. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2014, 90 (19), ⟨10.1103/PhysRevB.90.195301⟩. ⟨hal-02050898v2⟩
Fahrettin Sarcan, Ömer Dönmez, Kamuran Kara, Ayse Erol, Elif Akalin, et al.. Bismuth-induced effects on optical, lattice vibrational, and structural properties of bulk GaAsBi alloys. Nanoscale Research Letters, 2014, 9 (1), pp.119. ⟨10.1186/1556-276X-9-119⟩. ⟨hal-01946769⟩
Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, Julien Nicolaï, Alexandre Arnoult, et al.. Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing. Nanoscale Research Letters, 2014, 9 (1), pp.123. ⟨10.1186/1556-276X-9-123⟩. ⟨hal-01723509⟩
Simone Mazzucato, Henri Lehec, Hélène Carrère, Hajer Makhloufi, Alexandre Arnoult, et al.. Low-temperature photoluminescence study of exciton recombination in bulk GaAsBi. Nanoscale Research Letters, 2014, 9 (19), ⟨10.1186/1556-276X-9-19⟩. ⟨hal-01943032⟩
Fares Chouchane, Guilhem Almuneau, Nikolay Cherkashin, Alexandre Arnoult, Guy Lacoste, et al.. Local stress-induced effects on AlGaAs/AlOx oxidation front shape. Applied Physics Letters, 2014, 105 (4), pp.41909 - 41909. ⟨10.1063/1.4892094⟩. ⟨hal-01721161⟩
Fares Chouchane, Hajer Makhloufi, Stéphane Calvez, Chantal Fontaine, Guilhem Almuneau. Photoluminescence from InGaAs/GaAs quantum well regrown on a buried patterned oxidized AlAs layer. Applied Physics Letters, 2014, 104 (6), pp.061912. ⟨10.1063/1.4865419⟩. ⟨hal-01857529⟩
Communications dans un congrès
Simone Mazzucato, Henri Lehec, Hélène Carrère, Tiantian Zhang, Delphine Lagarde, et al.. Carrier localization and electron spin relaxation dynamics in GaAsBi. 5th International Workshop on Bismuth-Containing Semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland. ⟨hal-01947332⟩
Guilhem Almuneau, Fares Chouchane, Youness Laaroussi, Stéphane Calvez, Olivier Gauthier-Lafaye, et al.. Technological solutions for embedded oxide-based confinement for new VCSELs architectures. Colloque du GDR Oxyfun 2014, Jun 2014, Autrans, France. ⟨hal-01857531⟩
Guilhem Almuneau, Fares Chouchane, Stéphane Calvez, Chantal Fontaine. Solutions technologiques planaires pour un confinement par oxyde enterré pour de nouvelles architectures VCSEL. Colloque du GdR Nanofils et GdR Pulse, Oct 2014, Toulouse, France. ⟨hal-01857522⟩
Guilhem Almuneau, Fares Chouchane, Stéphane Calvez, Chantal Fontaine. Planar technological solutions for emmbedded oxide-based confinement for new VCSELs architectures. European VCSEL Day, May 2014, Rennes, France. pp.1-2. ⟨hal-01857530⟩
Alexandre Arnoult, Aurélien Kuck, Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, et al.. On the Bi diffusion from (001) GaAsBi−GaAs quantum wells during high temperature annealing. 5th international workshop on bismuth−containing semiconductors, Prof. Eoin O' Reilly, Jul 2014, Cork, Ireland. ⟨hal-01947318⟩
Simone Mazzucato, Henri Lehec, Tiantian Zhang, Hélène Carrère, Delphine Lagarde, et al.. Electron g-factor in strained bulk GaAsBi epilayers. Compound Semiconductor Week 2014, May 2014, Montpellier, France. ⟨hal-01947298⟩
Autres documents
Hajer Makhloufi, Poonyasiri Boonpeng, Simone Mazzucato, Hélène Carrère, Tiantian Zhang, et al.. Structural and optical properties of GaAsBi thin layers and quantum wells grown by molecular beam epitaxy (poster). 18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014. ⟨hal-01947354⟩
Poonyasiri Boonpeng, Alexandre Arnoult, Aurélien Kuck, Guy Lacoste, Chantal Fontaine. Bi-assisted nucleation of GaAs grown on 5°off (001) silicon substrates by molecular beam epitaxy. 18th International Conference on Molecular Beam Epitaxy, Sep 2014, Flagstaff, United States. 2014. ⟨hal-01947368⟩
