Description

The ambitious aim of the MOVeToDiam project is to create breakthrough by developing crucial Diamond technological steps to design and fabricate the next generation of power devices operating at 300°C as :

  • vertical p-channel MOSFET U gate  : Diam-UpMOSFET exhibiting a low on-resistance (< 75 mW) together with a breakdown voltage (BV) in the 600V – 1200V range
  • very high voltage diamond TMBS diode (Trench MOS Barrier Schottky) : Diam-pTMBS with both JF ≥ 2000 A/cm2 and BV ≥ 6kV.

Demonstration of the feasibility of Diam-UpMOSFET and Diam-pTMBS, requires basic research with high potential for disruptive technologies :

  • mastery of p and n stacking layers growth with control of width and doping concentration,
  • low resistive ohmic contacts both on n and p-type Diamond: to date no team has demonstrated ohmic contact on n-type,
  • control of a perfect verticality and surface state of the trench sidewall obtained by RIE etching process,
  • find the gate dielectric material offering the good dielectric properties and a diamond/dielectric interface electronically stable, adapted to achieve inversion mode (MOS effect),
  • design and realization of junction termination for device periphery by combining several classic technics to ensure targeted high breakdown voltage.