Members

Head of the group


Mail: cristiano.fuccio@laas.fr
Room : D14 - Building : D
Phone : (+33) 5 61 33 62 54

Dr. Filadelfo Cristiano received the B.Sc. degree in physics from the University of Catania, Italy, in 1991 and the Ph.D. degree from the University of Surrey, U.K., in 1998. From 1998 to 2000, he worked in the CEMES/CNRS laboratory of Toulouse, France. In 2000, he joined the LAAS/CNRS laboratory of Toulouse. His research interests concern the investigation of defect formation and evolution in ion implanted semiconductors and their impact on dopant diffusion and activation. His recent work addresses in particular the defects’ role on the electrical activation of dopants, especially after ultra-rapid thermal processes, including millisecond Flash and nanosecond Laser anneals. Dr Cristiano has contributed to several European projects and organised three symposia at E-MRS. From 2012 to 2015, he has managed the LAAS research team “Materials and Processes for Nanoelectronics”. He has authored or coauthored about 120 papers in scientific journals and over 50 papers in international conferences, including several invited presentations on Ion Beam Induced Defects in Silicon.

 

 

CNRS researchers


Mail : elena.bedel@laas.fr
Room : D15 - Building : D
Phone : (+33)5 61 33 64 32

Dr. Elena Bedel-Pereira is a physicist, she received her PhD degree from the University of Toulouse in 1984. Then, she worked at LAAS/CNRS laboratory, Toulouse France, as permanent scientist (CR-CNRS) since 1986. From 1986 to 2005, her research included the growth and characterization of III/V semiconductor materials; the materials developed were aimed at designing and producing components for optoelectronics. Since 2006, she has worked in the field of materials for nano-electronics, and in particular on electrical and transport characterization to study diffusion and activation phenomena in silicon and silicon-based materials. Recently, she enlarged its field of competence with the study of components based on organic materials. Her research interest can be summarized as advanced characterization for devices optimization. She has authored and coauthored over 90 papers in referred international journals and over 60 papers in international conferences. 

 

Mail : sebastien.plissard@laas.fr
Room : D12 - Building : D
Phone : (+33) 5 61 33 69 70
Homepage

Dr. Sébastien Plissard received his Ph.D. degree in Micro & Nano Electronics from the Grenoble Institute of Technologies, France, in 2007. In the last 10 years his research has revolved around the development of high mobility 2D heterostructures, the growth of III-V materials, and their characterizations: X-ray diffraction, SEM, TEM, photoluminescence and Hall Effect measurements. Resulting from these studies, a new semiconductor optical amplifier at 1.7 micron was developed in collaboration with Thales and an original process of III-V integration on silicon was reported. In October 2010, he joined the Photonics and Semiconductor Nanophysics (PSN) group at TU/ Eindhoven to develop in collaboration with researchers from TU/ Delft high mobility nanowires grown by metal organic vapour phase epitaxy. These InSb nanowires used in qubits and Majorana devices allowed the measurements of first signatures of Majorana fermions (Science 2012). Finally, in December 2013, he was hired by the LAAS‐CNRS laboratory in Toulouse as a senior independent scientist (CR2 CNRS) and contributed the growth of low bandgap III-V nanowires integrated on silicon.

 

 


Mail : emmanuel.scheid@laas.fr
Room : D1 - Building : D
Phone : (+33) 5 61 33 64 85

Dr. Emmanuel Scheid received his Ph.D. degree in Electronics from the Institut National Polytechnique de Grenoble, France, in 1987.  In 1990, he joined the LAAS/CNRS laboratory of Toulouse, as a senior independent scientist (CR CNRS). His first subjects of research concerned the processes of deposition of layers entering in the fabrication in a Silicon MOS transistor. Particularly, he studied the process of Low Pressure Chemical Vapor Deposition (LPCVD) of polysilicon, Silicon dioxide and Silicon Nitride. His approach was to develop a vertical approach, using chemistry and physics, of optimization of working properties (physical, electrical, sometimes optical) through fundamental studies of the correlation between the process parameters and these properties. Through the years, the domain of application of this studies extended to sensor devices and power devices, always based on Silicon. Between 1998 and 2005, he developed an original concept of reactor for the deposition of thick (2-12µm) B-doped polysilicon layers dedicated to these applications, tackling the quasi-definitive problem of the stress in deposited layers. Since 2012, his field of interest moved to Atomic Layer Deposition (ALD) for deposition of metallic oxides, such as Al2O3, HfO2, SrTiO3, TiO2... The same approach of understanding the exact chemistry of deposition, in order to optimize mainly the insulating properties of these oxide for their use in MOS fabrication, either on Silicon or III-V materials.

 

 

PostDoc researchers

Dr. Nicolas Mallet

Dr. Richard Monflier 


Mail : nicolas.mallet@laas.fr
Room : F2 - Building : F
Phone : (+33) 5 61 33 78 73

 


Mail : richard.monflier@laas.fr
Room : F5 - Building : F
Phone : (+33) 05 61 33 78 34

 

 

PhD students

Amélie Abdellaoui   Lea Dagault   Gabriela Herrero-Saboya 

Mail : amelie.abdellaoui@laas.fr
Room : F5 - Building : F
Phone : (+33) 5 61 33 63 58

 
 

Mail : lea.dagault@laas.fr
Room : C011 - Building : C
Phone : (+33) 5 61 33 78 69

 

Mail : gabriela.herrero-saboya@laas.fr
Room : D19 - Building : D
Phone : (+33) 5 61 33 78 53

 

Mail : abhishek.kumar@laas.fr
Room : F5 - Building : F
Phone : (+33) 5 61 33 78 34


Mail : adelin.patoux@laas.fr
Room : F2 - Building : F
Phone : (+33) 5 61 33 79 48


Mail : dima.sadek@laas.fr
Room : D7 - Building : D
Phone : (+33) 5 61 33 63 88

 
 

Mail : luca.bettamin@laas.fr
Room : F2 - Building : F
Phone : (+33) 5 61 55 87 89

 
 

 

Master students

   

Mail : 
Room :  - Building : 
Phone : (+33) 5 61 33 


Mail : 
Room :  - Building : 
Phone : (+33) 5 61 33 

 

Affiliated Researcher


Mail : guilhem.larrieu@laas.fr
Room : D11 - Building : D
Phone : (+33) 5 61 33 79 84

Dr Guilhem Larrieu, CR1-HDR CNRS researcher (LAAS), received the B.Sc. degree in material science and the Ph.D. degree in Electronics from the University of Lille, France, in 2000 and 2004, respectively. In 2005, he was a Post-doctoral fellow at University of Texas at Arlington (UTA), USA. At the end of 2005, he was hired by the IEMN-CNRS laboratory in Lille as a senior independent scientist and contributed to the metallic S/D FET topic by developing the dopant segregation technology. Finally, in 2010, he moved to LAAS-CNRS in Toulouse to establish in this laboratory a new research axis dealing with nanowire arrays for electronics and sensing applications. He is head of “Materials and Processes for nanoelectronics” group. His current research on nanowire-based devices includes silicon and III–V-based nanostructures and nanodevices ranging from material investigation (chemical/ physical properties) to processing, integration, and characterization of the related devices. Recently, they demonstrated the possibility to integrate vertical NW based 3D-transistors for ultimate nanoelectronics. Working in collaboration with bio related groups, he is developing innovative biosensing platforms based on nanoscale structures. He has regularly participated to or coordinated research proposals in response to local, national or European calls for projects (2 STREPs, 2 NoE, 1 coordination action). In addition to the several technical and management reports, his activity has involved the supervision of the research activities of 5 master students, 7 Ph.D. students and 2 Post-Doc researchers. He served in several international conferences as TPC co-chair (IEEE NMDC 2016) or as TPC member (IEDM2016/2017, DATE2017, EMRS2017). He is the author or co-author of more than 50 papers in scientific journals and holds 9 patents as principal investigator.

 

Alumni

2018 - Dr. Daya Sagar Dhungana, currently Post Doc at University of Milan, Italia
2018 - Dr. Richard Daubriac, currently Post Doc at CEA-LETI in Grenoble, France
2017 - Dr. Julien Pezard, currently Post Doc at University of Sherbrook, Canada
2017 - Dr. Brieux Durand, currently Post Doc at the IIS university of Tokyo, Japan
2016 - Nicolo Sartori, currently PhD student at TU Delft, The Netherlands 
2016 - Cyril Corbon, currently working at EVS Broadcast Equipment in Toulouse, France
2015 - Dr. Youssouf Guerfi, Post Doc at CEA-LETI in Grenoble, France
2015 - Dr. Naïara Klein, Post Doc at the University PUC in Rio de Janeiro, Brazil 
2013 - Dr. Maeva Collet, Prag. at IUT Toulouse, France