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18089
09/05/2018

A power management system using reconfigurable storage scheme for batteryless wireless sensor nodes

A.SISKOS, F.EL MAHBOUBI, V.BOITIER, M.BAFLEUR, T.LAOPOULOS

ESE, Thessaloniki

Manifestation avec acte : International Conference on Modern Circuits and Systems Technologies (MOCAST) on Electronics and Commuications ( MOCAST ) 2018 du 07 mai au 09 mai 2018, Thessaliniki (Grèce), Mai 2018 , N° 18089

Lien : https://hal.laas.fr/hal-01753877

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Abstract

The expanding network of wireless sensors nodes for IoT applications requires autonomous and low power systems. Supercapacitors (SCs) and energy harvesters manage to replace batteries, offering power autonomy and lifetime. In this work, it is presented a power management system that uses a reconfigurable SC scheme as storage media that is capable to store sufficient energy, while presenting a rapid initial charging. The system is implemented in CMOS 0.35μm AMS technology and consists of a reconfigurable bank of SCs, which is the power source of the node, a control unit and a LDO providing constant output voltage for the wireless sensor node (WSN).

143233
18091
09/05/2018

Energy-Harvesting Powered Variable Storage Topology For Battery-Free Wireless Sensors

F.EL MAHBOUBI, M.BAFLEUR, V.BOITIER, J.M.DILHAC

ESE

Manifestation avec acte : International Conference on Modern Circuits and Systems Technologies (MOCAST) on Electronics and Commuications ( MOCAST ) 2018 du 07 mai au 09 mai 2018, Thessaliniki (Grèce), Mai 2018 , N° 18091

Lien : https://hal.laas.fr/hal-01747946

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Abstract

This paper presents a novel energy storage architecture aimed at providing the energy autonomy of battery-free wireless sensors powered by energy harvesting. It is based on a concept of adaptive storage using ultra-capacitors and allows meeting contradictory compromises: fast initial startup (small capacitance value) to be able to supply the load as quickly as possible, storage of a large amount of energy (big capacitance value) to increase the energy autonomy of the load and providing a pre-regulated voltage. Compared to previously published structures, the proposed architecture is much less complex and exhibits 92% energy utilization efficiency.

143237
18077
22/03/2018

A High Efficiency and Power Density, High Step-Up, Non-isolated DC-DC Converter Based on Multicell Approach

A.ANDRETA, T.LAMORELLE, Y.LEMBEYE, L.KERACHEV, F.S.ARDEBILI, L.LAVADO VILLA

G2Elab, ISGE

Manifestation avec acte : International Conference on Integrated Power Electronics Systems ( CIPS ) 2018 du 20 mars au 22 mars 2018, Stuttgart (Allemagne), Mars 2018 , N° 18077

Lien : https://hal.archives-ouvertes.fr/hal-01744905

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143032
18049
13/03/2018

Méthodologies de protection ESD : du composant au système

M.BAFLEUR, F.CAIGNET, N.NOLHIER

ESE

Ouvrage (auteur) : Méthodologies de protection ESD : du composant au système, ISTE Editions, N°ISBN 9781784053260, N°280, Mars 2018 , N° 18049

Lien : https://hal.laas.fr/hal-01702094

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Résumé

Les défaillances induites par les décharges électrostatiques (ESD) constituent un problème majeur de fiabilité et de robustesse des circuits intégrés et des systèmes électroniques. Dans certaines applications comme celles de l’automobile, ce pourcentage peut être proche de 20 %. Les problèmes de défaillance catastrophiques induits par des décharges électrostatiques n’ont commencé à être sérieusement pris en compte qu’avec l’avènement des technologies microélectroniques et la large diffusion de leurs applications dans notre vie quotidienne. Cet ouvrage examine les diverses méthodologies de protection ESD et montre par le biais de cas concrets que la meilleure approche en termes de robustesse et de coût consiste à mettre en oeuvre une stratégie globale de protection ESD. Cette approche est déclinée du composant au système pour proposer des techniques d’investigation et des méthodologies de simulation prédictive associées, validées sur différents cas d’étude.

142773
18028
02/03/2018

Engineering of Al/CuO reactive multilayer thin films for tunable initiation and actuation

C.ROSSI

NEO

Rapport LAAS N°18028, Mars 2018

Lien : https://hal.laas.fr/hal-01701972

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Abstract

Sputter-deposited Al/CuO multilayers represent the state-of-the-art of energetic nanomaterials. As such, they offer an opportunity for tunable ignition and actuation because their theoretical energy densities are significantly higher than most conventional secondary explosives while being less sensitive to undesired initiation. Both the sensitivity and combustion properties (temperature, rate and products released) can be manipulated via the layering, reactant spacing and stoichiometry of the multilayer and, to a lesser extent, via interface engineering. In this article, we first describe the technology of deposition of Al/CuO multilayers focusing on direct current sputter deposition followed by a comprehensive review of the materials structural characteristics. Next, experimental and theoretical works performed on these reactive multilayered materials to date is presented in terms of methods used, the results acquired on ignition and combustion properties, and conclusions drawn. Emphasis is placed on several studies elucidating the fundamental processes that underlie propagating combustion reactions. We examine the influence of the « ceiling » temperature that traduces the multilayer disintegration when reaching high temperatures (e.g., vaporization temperatures). This paper provides a good support for engineers to safely propose Al/CuO multilayers structure to regulate the energy release rates and ignition threshold in order to manufacture high performance and tunable initiator devices.

142567
17481
19/01/2018

ESD Protection Methodologies: From Component to System

M.BAFLEUR, F.CAIGNET, N.NOLHIER

ESE

Ouvrage (auteur) : ESD Protection Methodologies: From Component to System, Elsevier, N°ISBN 9781785481222, Janvier 2018, 284p. , N° 17481

Lien : https://hal.laas.fr/hal-01613901

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Abstract

Failures caused by electrostatic discharges (ESD) constitute a major problem concerning the reliability and robustness of integrated circuits and electronic systems. This book summarizes the many diverse methodologies aimed at ESD protection and shows, through a number of concrete studies, that the best approach in terms of robustness and cost-effectiveness consists of implementing a global strategy of ESD protection. ESD Protection Methodologies begins by exploring the various normalized test techniques that are used to qualify ESD robustness as well as characterization and defect localization methods aimed at implementing corrective measures. Due to the increasing complexity of integrated circuits, it is important to be able to provide a simulation in which the implemented ESD protection strategy provides the desired protection, while not harming the performance levels of the circuit. Therefore, the main features and difficulties related to the different types of simulation, finite element, SPICE-type and behavioral, are then studied. To conclude, several case studies are presented which provide real-life examples of the approaches explained in the previous chapters and validate a number of the strategies from component to system level.

142061
17568
13/12/2017

A solution for channel electron migration in normally-off MIS-HEMT with buried fluorine ions

F.MORANCHO, S.HAMADY, B.BEYDOUN

ISGE, LPM Liban

Manifestation avec acte : International Conference on Microelectronics ( ICM ) 2017 du 10 décembre au 13 décembre 2017, Beyrouth (Liban), Décembre 2017 , N° 17568

Lien : https://hal.archives-ouvertes.fr/hal-01710524

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Abstract

High electron mobility transistors based on Gallium Nitride are promising devices for high frequency and high-power applications. While switching applications demand normally-off operation, conventional HEMTs possess a channel populated with electrons at zero gate voltage making them normally-on. By implanting fluorine below the channel, normally-off operation can be achieved. However, at high gate voltages, a drop in the transconductance is obtained due to electron migration from the AlGaN/GaN interface to the insulator/AlGaN interface. In this work, to recover the drop in the transconductance and hence increase the current density, an AlN interlayer is introduced between the AlGaN and GaN layers to block electron migration

142638
17589
12/12/2017

ADREAM : Energy Consumption Optimization through Dynamic Simulations for the development of a platform of Intelligent Energy Management

I.PAPAS, C.ECREPONT, C.ALONSO, B.ESTIBALS

ISGE, IDEA

Affiche/Poster : LIA NextPV annual workshop ( ) 2017 du 11 décembre au 12 décembre 2017, Tokyo (Japon), Décembre 2017, 1p. , N° 17589

Lien : https://hal.laas.fr/hal-01703407

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142755
17553
12/12/2017

Distributed DC/DC architecture for an LVDC hydrogen production microgrid based on concentrated photovoltaïc sources

K.NEUHAUS, C.ALONSO

ISGE

Affiche/Poster : LIA NextPV annual workshop ( ) 2017 du 11 décembre au 12 décembre 2017, Tokyo (Japon), Décembre 2017, 1p. , N° 17553

Lien : https://hal.archives-ouvertes.fr/hal-01702956

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Abstract

In the context of the decrease of fossil fuels and ecological transition, hydrogen production has been identified as a solution for storage consuption of renewable energies. High efficiency solar cells can be used in conjunction with solar concentration to further push the limits of photovoltaïc energy production. In order to maximize this production, high precision solar tracking in addition to optimized conversion devices are needed. In this study, a distributed DC/DC architecture is proposed with a Low Voltage DC microgrid, aiming to optimize energy flows between high efficiency concentrated

142574
17137
11/12/2017

Role of Trimethylaluminum (TMA) in low temperature atomic layer deposition of silicon nitride

A.DANGERFIELD, C.E.NANAYAKKARA, A.MALLIKARJUNAN, X.LEI, R.M.PEARLSTEIN, A.DERECSKEI-KOVACS, J.CURE, A.ESTEVE, Y.J.CHABAL

University of Texas, Versum Materials Inc, NEO

Revue Scientifique : Chemistry of Materials, Vol.29, N°14, pp.6022-6029, Décembre 2017, DOI: 10.1021/acs.chemmater.7b01816 , N° 17137

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Abstract

Aminosilanes are attractive precursors for atomic layer deposition of silicon oxides and nitrides because they are halide-free and more reactive than chlorosilanes. However, the deposition of silicon nitride on oxide substrates still requires relatively high temperatures. We show here that for a process involving disec-butylaminosilane and hydrazine, the insertion of Al from trimethyl aluminum allows the deposition of silicon nitride films at relatively low temperatures (250 °C). First-principles calculations reveal that the presence of Al increases the binding of molecular hydrazine, thereby effectively enhancing the reactivity of hydrazine with the silicon precursor during the atomic layer deposition process, which leads to nitrogen incorporation into silicon. However, the range of this enhancement is limited to ∼1 nm, requiring additional trimethylaluminum exposures to continue the Si3N4 deposition.

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