132documents trouvés
A temperature-dependent power MOSFET model for switching application
H.DIA, J.B.SAUVEPLANE, P.TOUNSI, J.M.DORKEL
ISGE
Manifestation avec acte : THERMINIC 2009, Louvain (Belgique), 7-9 Octobre 2009, pp.87-90 , N° 09861
Diffusable
120342Adaptive multiple cooling surfaces compact thermal model (CTM) and boundary condition independent multiple heat sources CTM
P.TOUNSI, J.B.SAUVEPLANE, J.NOWAKOWSKI, F.MADRID-LOZANO, J.M.DORKEL
ISGE
Rapport LAAS N°09330, Juin 2009, 7p.
Diffusable
117994Potentialities of silicon piezoresistivity for mechanical state monitoring of VDMOS transistors
E.MARCAULT, M.BREIL, P.TOUNSI, J.M.DORKEL, A.BOURENNANE, J.B.SAUVEPLANE
ISGE
Manifestation avec acte : MIXDES 2009, Lodz (Pologne), 25-27 Juin 2009, 5p. , N° 09167
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117983Electro-thermal co-simulation with REBECA-3D
H.FERAL, J.P.FRADIN, P.TOUNSI, J.M.DORKEL, J.B.SAUVEPLANE
EPSILON, ISGE
Manifestation avec acte : 3rd International Conference on Automotive Power Electronics, Paris (France), 25-26 Mars 2009, 3p. , N° 09361
Diffusable
118142Nonlinear thermal resistance control equations for adaptive multiple cooling surface CTM, and boundary condition independent multiple heatsources CTM
P.TOUNSI, F.MADRID-LOZANO, J.NOWAKOWSKI
ISGE
Manifestation avec acte : 2nd International Conference on Thermal Issues in Emerging Technologies, Theory and Applicattions (ThETA2 2008), Le Caire (Egypte), 17-20 Décembre 2008, 7p. , N° 08855
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118134Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications
J.L.FOCK SUI TOO, B.CHAUCHAT, P.AUSTIN, P.TOUNSI, M.MERMET-GUYENNET, R.MEURET
ISGE, PEARL, HISPANO-SUIZA
Revue Scientifique : Microelectronics Reliability, Vol.48, N°8-9, pp.1453-1458, Novembre 2008 , N° 08589
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Abstract
As for railway traction applications, aeronautical power electronics implies high power density handling. Moreover typical aeronautical applications impose a harsh thermal environment. SiC technology has recently emerged for high power and high temperature application, but is not yet mature enough. Consequently it is still important to push the silicon devices temperature limits in order to increase the amount of switched power. Device ageing is accelerated and there exists the risk of catastrophic failure by thermal runaway. In order to design correctly high temperature power systems, knowing the IGBT characteristics at extended temperature ranges becomes essential. This paper describes an experimental setup and test procedure conceived to experiment with different available IGBT technologies at temperatures beyond the limits rated by manufacturers (-55 °C, +175 °C). The aim is to characterize the devices for a better understanding and optimized safe application. This will ease prototyping for future development of IGBT modules in aircraft.
Mots-Clés / Keywords
Aeronautic; High temperature; Low temperature; Experimental setup; IGBT; Reliability;
Modélisation comportementale Spice d'un circuit intégré de puissance pour systèmes automobiles embarqués
P.TOUNSI, L.GUILLOT, J.B.SAUVEPLANE
ISGE, FREESCALE
Manifestation avec acte : 10es Journées Pédagogiques du CNFM (JPCNFM'2008), Saint Malo (France), 26-28 Novembre 2008, 3p. , N° 08856
Diffusable
118136Experimental study of power IGBT technologies at large range temperature
J.L.FOCK SUI TOO, B.CHAUCHAT, S.NICOLAU, F.MADRID-LOZANO, P.AUSTIN, P.TOUNSI, M.MERMET-GUYENNET
ISGE, PEARL
Rapport LAAS N°08527, Octobre 2008, 18p.
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1152523D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET
J.B.SAUVEPLANE, P.TOUNSI, E.SCHEID, A.DERAM
ISGE, M2D, FREESCALE
Manifestation avec acte : 19th European Symposium Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2008), Maastricht (Pays Bas), 29 Septembre - 2 Octobre 2008, 10p. , N° 08559
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Abstract
This paper presents a methodology and tool based on 3D electro-thermal finite elements modeling intended to analyze the sequence of the events after emergence of defects in automotive power MOSFETs. Finite element modeling of power device and its nearby environment is detailed. The effects of delamination and bonding wire lift off on device transient electro-thermal behavior are investigated during a short circuit mode. Thus it helps to quantify the electro-thermal impact of the damages. Such modeling is useful for optimization of structure design to guarantee a longer lifespan.
Mots-Clés / Keywords
Power electronics; MOSFET; finite element modelling; Electro-thermal coupling; Device reliability;
3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET
J.B.SAUVEPLANE, P.TOUNSI, E.SCHEID, A.DERAM
ISGE, M2D, FREESCALE
Revue Scientifique : Microelectronics Reliability, Vol.48, N°8-9, pp.1464-1467, Septembre 2008 , N° 08559
Diffusable
Plus d'informations
Abstract
This paper presents a methodology and tool based on 3D electro-thermal finite elements modeling intended to analyze the sequence of the events after emergence of defects in automotive power MOSFETs. Finite element modeling of power device and its nearby environment is detailed. The effects of delamination and bonding wire lift off on device transient electro-thermal behavior are investigated during a short circuit mode. Thus it helps to quantify the electro-thermal impact of the damages. Such modeling is useful for optimization of structure design to guarantee a longer lifespan.
Mots-Clés / Keywords
Power electronics; MOSFET; finite element modelling; Electro-thermal coupling; Device reliability;