Laboratoire d’Analyse et d’Architecture des Systèmes
A.MARCATI, L.PRAT, C.SERRA, J.TASSELLI, P.DUBREUIL
LGC, INPT, EXT, LIPHT, N2IS, TEAM
Revue Scientifique : Chemical Engineering and Technology, Vol.32, N°11, pp.1823-1830, Novembre 2009 , N° 09736
Diffusable
119794F.RACHEDI, R.GUILET, P.COGNET, J.TASSELLI, A.MARTY, P.DUBREUIL
LGC, N2IS, TEAM
Revue Scientifique : Chemical Engineering and Technology , Vol.32, N°11, pp.1766-1773, 12 Octobre 2009 , N° 09697
Diffusable
119594S.MOUMDJI, A.LARRUE, D.BELHARET, P.DUBREUIL, S.BONNEFONT, O.GAUTHIER-LAFAYE
PH, TEAM
Manifestation sans acte : European Semiconductor Laser Workshop (ESLW 2009), Vienne (Autriche), 25-26 Septembre 2009, p.13 (Résumé) , N° 09568
Diffusable
119075M.BRUNET, P.KLEIMANN, E.DARAN, F.CARCENAC, L.JALABERT, P.DUBREUIL
ISGE, INL, TEAM
Manifestation avec acte : 20th MicroMechanics europe Workshop (MME 2009), Toulouse (France), 20-22 Septembre 2009, 4p. , N° 09825
Non diffusable
120231M.BRUNET, P.DUBREUIL, H.E.DKOTB MAHFOZ, A.GOUANTES, A.M.DORTHE
TEAM, ISM, ENSCPB, ISGE
Revue Scientifique : Microsystem Technologies, Vol.15, N°9, pp.1449-1457, Septembre 2009 , N° 08634
Diffusable
Plus d'informations
A reliable factorial experimental design was applied to DRIE for specifically producing high-aspect ratio trenches. These trenches are to be used in power electronics applications such as active devices: deep trench superjunction MOSFET (DT-SJMOSFET) and passive devices: 3D integrated capacitors. Analytical expressions of the silicon etch rate, the verticality of the profiles, the selectivity of the mask and the critical loss dimension were extracted versus the process parameters. The influence of oxygen in the passivation plasma step was observed and explained. Finally, the analytical expressions were applied to the devices objectives. A perfectly vertical trench 100-¼m deep was obtained for DT-SJMOSFET. Optimum conditions for reaching high-aspect ratio structures were determined in the case of high-density 3D capacitors.
D.BELHARET, P.DUBREUIL, D.COLIN, L.MAZENQ, H.GRANIER
TEAM
Manifestation avec acte : European Microelectronics and Packaging Conference (EMPC 2009, Rimini (Italie), 15-18 Juin 2009, 7p. , N° 09411
Diffusable
118334A.ALLOUCH, Y.VIERO, M.GODDEFROY, J.C.MILLET, P.DUBREUIL, A.BANCAUD, P.JOSEPH, A.M.GUE, P.ABGRALL, N-T.NGUYEN
N2IS, TEAM, Singapore
Manifestation avec acte : 1st European Conference on Microfluidics (MicroFlu'08), Bologne (Italie), 10-12 Décembre 2008, 8p. , N° 08700
Diffusable
Plus d'informations
A.LARRUE, O.BOUCHARD, A.MONMAYRANT, O.GAUTHIER-LAFAYE, S.BONNEFONT, A.ARNOULT, P.DUBREUIL, F.LOZES-DUPUY
PH, TEAM
Revue Scientifique : IEEE Photonics Technology Letters, Vol.20, N°24, pp.2120-2122, Décembre 2008 , N° 08797
Diffusion restreinte
Plus d'informations
We have developed integrated distributed-feedback laser arrays using photonic crystal waveguide on a membrane. They exhibit stable single-mode emission. Using both different lattice constants and a method called affine deformation of the crystal, we obtained extended control over the lasing wavelength. Laser arrays with laser-to-laser wavelength shifts as small as 0.3 nm are achieved.
Y.VIERO, A.ALLOUCH, M.GODDEFROY, J.C.MILLET, P.DUBREUIL, A.M.GUE, A.BANCAUD, P.JOSEPH, P.ABGRALL, N-T. NGUYEN
N2IS, TEAM, NTU, Nanyang
Manifestation sans acte : GDR Micro Nano Systèmes, Montpellier (France), 3 Décembre 2008, 1p. , N° 08835
Diffusable
117918A.LARRUE, P.DUBREUIL, D.BELHARET, F.CARCENAC, S.BONNEFONT, O.GAUTHIER-LAFAYE, F.LOZES-DUPUY
PH, TEAM
Manifestation avec acte : Journées Nationales sur les Technologies Emergentes en Micro-Nanofabrication, Toulouse (France), 19-21 Novembre 2008, 2p. , N° 08738
Diffusable
Plus d'informations
We develop a method of masking to improve the aspect ratio of GaAs-based Photonic Crystals (PhC). The masking consists of the combination of Cr layer with SiO2 layer. A study on the PhC patterning in Cr is performed as well as the optimization of the SiO2 etching for holes ranging from 150 to 250nm.