137documents trouvés
Distributed modeling approach applied IGBT
P.AUSTIN
ISGE
Ouvrage (contribution) : Power/HV MOS Devices Compact Mondeling, Springer, 2010, N°ISBN 978-90-481-3045-0, Octobre 2010, pp.149-182 , N° 10644
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122874A brief over view of silicon active and passive power devices technologies: potentialities of evolving towards 3D heterogeneous functional integration
J.L.SANCHEZ, A.BOURENNANE, M.BREIL, P.AUSTIN, M.BRUNET, J.P.LAUR, F.MORANCHO
ISGE
Conférence invitée : International Seminar on Power Semiconductors (ISPS'10), Prague (République Tchèque), 1-3 Septembre 2010, pp.27-36 , N° 10475
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122356Sensitive volume and triggering criteria of SEB in classic planar VDMOS
A.LUU, P.AUSTIN, N. BUARD, T.CARRIERE, P.POIROT, R.GAILLARD, M.BAFLEUR, G.SARRABAYROUSE
ISGE, EADS, INFODUC SARL, M2D
Revue Scientifique : IEEE Transactions on Nuclear Science, Vol.57, N°4, pp.1900-1907, Août 2010 , N° 09710
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122515Rapport intermédiaire EPOPE. Deliverable L1.1, L1.2 et L1.6
M.ZERARKA, P.AUSTIN, M.BAFLEUR
ISGE
Rapport de Contrat : Contrat EADS, LAAS-CNRS, Juillet 2010, 41p. , N° 10405
Diffusion restreinte
1220003D Heterogeneous Functional Integration an Alternative Way to Develop New Power Integrated Functions
J.L.SANCHEZ, A.BOURENNANE, M.BREIL, P.AUSTIN, M.BRUNET, J.P.LAUR
ISGE
Manifestation avec acte : XV International Workshop on the Physics of Semiconductor Devices (IWPSD 2009), New Delhi (Inde), 15-19 Décembre 2009, pp.159-171 , N° 09797
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120102Sensitive volume and triggering criteria of SEB in classic planar VDMOS
A.LUU, P.AUSTIN, N. BUARD, T.CARRIERE, P.POIROT, R.GAILLARD, M.BAFLEUR, G.SARRABAYROUSE
ISGE, EADS, INFODUC SARL, M2D
Manifestation avec acte : European Conference on Radiation and Its Effects on Components and Systems (RADECS 2009), Bruges (Belgique), 14-18 Septembre 2009, pp.552-558 , N° 09710
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122514New self-controlled and self-protected IGBT based integrated switch
F.CAPY, J.P.LAUR, M.BREIL, F.RICHARDEAU, M.BRUNET, E.IMBERNON, A.BOURENNANE, C.CARAMEL, P.AUSTIN, J.L.SANCHEZ
ISGE, LAPLACE, TEAM
Manifestation avec acte : 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD'09), Barcelone (Espagne), 14-17 Juin 2009, pp.243-246 , N° 09079
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Abstract
In this paper, we present the realization of a new self-controlled integrated power switch dedicated to selfswitching mode power converters. To achieve this function, an original topology based on an IGBT is proposed. Its operating modes are analyzed using 2D physical simulation. To realize this new power switch, a technological process compatible with the IGBT process and with 3D capacitors realization is proposed.
Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications
J.L.FOCK SUI TOO, B.CHAUCHAT, P.AUSTIN, P.TOUNSI, M.MERMET-GUYENNET, R.MEURET
ISGE, PEARL, HISPANO-SUIZA
Revue Scientifique : Microelectronics Reliability, Vol.48, N°8-9, pp.1453-1458, Novembre 2008 , N° 08589
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Abstract
As for railway traction applications, aeronautical power electronics implies high power density handling. Moreover typical aeronautical applications impose a harsh thermal environment. SiC technology has recently emerged for high power and high temperature application, but is not yet mature enough. Consequently it is still important to push the silicon devices temperature limits in order to increase the amount of switched power. Device ageing is accelerated and there exists the risk of catastrophic failure by thermal runaway. In order to design correctly high temperature power systems, knowing the IGBT characteristics at extended temperature ranges becomes essential. This paper describes an experimental setup and test procedure conceived to experiment with different available IGBT technologies at temperatures beyond the limits rated by manufacturers (-55 °C, +175 °C). The aim is to characterize the devices for a better understanding and optimized safe application. This will ease prototyping for future development of IGBT modules in aircraft.
Mots-Clés / Keywords
Aeronautic; High temperature; Low temperature; Experimental setup; IGBT; Reliability;
Experimental study of power IGBT technologies at large range temperature
J.L.FOCK SUI TOO, B.CHAUCHAT, S.NICOLAU, F.MADRID-LOZANO, P.AUSTIN, P.TOUNSI, M.MERMET-GUYENNET
ISGE, PEARL
Rapport LAAS N°08527, Octobre 2008, 18p.
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115252Development of a self-protected and self-controlled integrated power switch: comparison of two circuit architectures
F.CAPY, J.LE GAL, M.BREIL, F.RICHARDEAU, J.P.LAUR, P.AUSTIN, J.L.SANCHEZ
ISGE, LAPLACE
Manifestation avec acte : BIPOLAR/BiCMOS Circuits and Technology Meeting (BCTM), Monterey (USA), 13-15 Octobre 2008, pp.49-52 , N° 08390
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Abstract
In this paper, two topologies are proposed to develop a new self-controlled and selfprotected integrated power switch. Their operation mode is analyzed using 2D physical simulation and compared.