121documents trouvés
Activation électrique et mobilité des porteurs en présence de défauts d'implantation dans les jonctions ultra-minces
F.SEVERAC, F.CRISTIANO, E.BEDEL-PEREIRA
M2D
Manifestation avec acte : 11e Journées Nationales du Réseau Doctoral en Microélectronique (JNRDM), Bordeaux (France), 14-16 Mai 2008, 5p. , N° 08261
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113935Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements
F.SEVERAC, F.CRISTIANO, E.BEDEL-PEREIRA, W.LERCH, S.PAUL, H.KHEYRANDISH
M2D, Mattson, CSMA
Manifestation avec acte : E-MRS Spring Meeting 2008, Strasbourg (France), 26-30 Mai 2008, 12p. , N° 08265
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Abstract
Current fabrication processes of MOS source/drain ultra-shallow junctions (dopant implantation in a preamorphised substrate, followed by ultra-rapid anneals at high temperature) generate defects which can degrade their electrical properties. The understanding of the physical phenomena responsible for this degradation is essential for the optimization of the fabrication processes. Among these phenomena, the impact of Boron Interstitial Clusters (BICs) on the carrier mobility has not yet been clearly understood. In this work, we present an empirical method for the self-consistent interpretation of SIMS and Hall effect measurements of boron doped ultra-shallow junctions that allows to estimate the activation level of the doped layers (maximum active dopant concentration, active dose fraction) and, for the case of partially activated structures, to assess whether or not the carrier mobility is affected by the electrically inactive BICs. Both epitaxial and implanted structures were studied. We found that, depending on the fabrication conditions, the maximum active dopant concentrations extracted from the studied samples may differ from the boron solid solubility at the process temperature. In addition, for the partially electrically active structures, a degradation of the drift mobility due to the presence of BICs is shown, which is experimentally confirmed by low temperature Hall effect measurements, indicating the existence of an additional Coulomb-type scattering mechanism.
Mots-Clés / Keywords
Ultra shallow junctions; Hole mobility; Hall effect; Boron interstitial clusters; SIMS;
Anomalous low-temperature photoluminescence behaviour of silicon nanocrystals
K.KOUKOS, G.SAUNIER, E.BEDEL-PEREIRA, O.GAUTHIER-LAFAYE, E.SCHEID, G.SARRABAYROUSE, F.LOZES-DUPUY
PH, M2D
Manifestation avec acte : E-MRS Spring Meeting 2008, Strasbourg (France), 26-30 Mai 2008, 1p. (Résumé) , N° 08575
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115553Effect of annealing conditions on photoluminescence properties of low-pressure chemical vapour deposition-grown silicon nanocrystals
K.KOUKOS, E.BEDEL-PEREIRA, O.GAUTHIER-LAFAYE, E.SCHEID, L.BOUSCAYROL, B.FRANC, P.ARGUEL, S.BONNEFONT, F.LOZES-DUPUY, G.SARRABAYROUSE
M2D, PH, TEAM, 2I
Revue Scientifique : Japanese Journal of Applied Physics, Vol.47, N°1, pp.130-132, Janvier 2008 , N° 07654
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Abstract
The photoluminescence properties of silicon nanocrystals in SiO2, prepared by low-pressure chemical vapour deposition and subsequent annealing have been studied. A comprehensive range of combinations of film compositions and annealing conditions were tested. The use of two-step annealing (a rapid annealing, followed by a conventional one) used instead of the common one-step conventional annealing, enhances emission. Annealing conditions are key to the photoluminescence and structural properties of the obtained film and have been investigated in detail. Film composition is also an important parameter, which allows tuning of the emission in a wide spectral range in the near infrared.
Mots-Clés / Keywords
LPCVD; Silicon nanocrystals; Photoluminescence; SiOx; Rapid Thermal Annealing (RTA);
Luminescence des nanocristaux de silicium déposés par LPCVD : effet des traitements thermiques
K.KOUKOS, G.SAUNIER, E.BEDEL-PEREIRA, C.BONAFOS, S.SCHAMM, L.BOUSCAYROL, E.SCHEID, O.GAUTHIER-LAFAYE, S.BONNEFONT, G.SARRABAYROUSE, F.LOZES-DUPUY
PH, M2D, CEMES/CNRS, TEAM
Manifestation avec acte : Optique. Journées Nationales des Cristaux pour l'Optique (JNCO), Grenoble (France), 2-5 Juillet 2007, pp.134-135 , N° 07313
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110690Light emission from LPCVD silicon nanocrystals: the effect of composition and annealing
K.KOUKOS, E.BEDEL-PEREIRA, L.BOUSCAYROL, E.SCHEID, O.GAUTHIER-LAFAYE, S.BONNEFONT, G.SARRABAYROUSE, F.LOZES-DUPUY
TEAM, M2D, PH
Manifestation avec acte : Conference on Lasers and Electro-Optics. International Quantum Electronics Conference (CLEO/Europe - IQEC 2007), Munich (Allemagne), 17-22 Juin 2007 , N° 07165
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110699Jonctions ultra-minces pour MOS "ultimes": caractérisation électrique pour l'étude des anomalies d'activation des dopants
F.SEVERAC, F.CRISTIANO, E.BEDEL-PEREIRA
M2D
Manifestation avec acte : 10ème Journées Nationales du Réseau Doctoral en Microélectronique, Lille (France), 14-16 Mai 2007, 4p. , N° 07809
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113994Temperature dependence of photoluminescence and photoreflectance spectra of dilute GaAsN alloys
J.PLAZA, J.L.CASTANO, B.J.GARCIA, H.CARRERE, E.BEDEL-PEREIRA
PH, Madrid
Revue Scientifique : Applied Physics Letters, Vol.86, N°12, pp.121918-1-121918-3, Mars 2005 , N° 05043
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Abstract
The temperature dependence of photoluminescence (PL) and photoreflectance (PR) spectra of GaAs1xNx unrelaxed layers (0x<0.05) grown on GaAs (100) substrates is studied and compared. The energy gap deduced from PR measurements and its temperature dependence are in good agreement with predictions of the band anticrossing model. The main PL peak follows a different temperature dependence, being lower in energy than the energy gap obtained by PR. The observed energy difference between PR and PL is much larger than the typical exciton binding energy, increasing with N content. This result agrees with other works, suggesting that low temperature PL recombination in GaAs1xNx involves electrons trapped in potential fluctuations due to N concentration inhomogeneities.
Thermally detected optical absorption and photoluminescence studies of InGaAsN/GaAs quantum wells
T.BOURAGBA, M.MIHAILOVIC, H.CARRERE, P.DISSEIX, A.VASSON, J.LEYMARIE, E.BEDEL-PEREIRA, A.ARNOULT, C.FONTAINE
LASMEA, INSA-LPMC, PH, TEAM
Revue Scientifique : IEE Proceedings in Optoelectronics, Vol.151, N°5, pp.309-312, Octobre 2004 , N° 04693
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103066Influence of RF plasma cell conditions on the incorporation of nitrogen into GaAsN and GalnAsN
H.CARRERE, A.ARNOULT, A.RICARD, E.BEDEL-PEREIRA
PH, CPAT-UPS, TEAM
Revue Scientifique : Journal of Vacuum Science and Technology B, Issue 5, Vol.22, pp.2448-2453, Septembre 2004 , N° 02279
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