121documents trouvés
Spin-polarized transport in NiFe/PTCTE/Co organic spin valves
M.PALOSSE, M.FISICHELLA, E.BEDEL-PEREIRA, I.SEGUY, C.VILLENEUVE, B.WAROT-FONROSE, J.F.BOBO
M2D, MINC, ONERA
Manifestation avec acte : Magnetism and Magnetic Materials Conference (MMM 2010), Atlanta (USA), 14-18 Novembre 2010, 8p. , N° 10636
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124239Diffusion de porteurs polarisés en spin dans un semi-conducteur organique
I.SEGUY, C.VILLENEUVE, E.BEDEL-PEREIRA, M.PALOSSE, J.F.BOBO, B.WAROT-FONROSE
M2D, MINC, ONERA
Manifestation sans acte : Dispositifs Electroniques Organiques (DIELOR 2010), Giens (France), 11-13 Octobre 2010, 1p. (Résumé) , N° 10635
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122862Structural, Magnetic end Magnetoresistive properties of PTCTE Based Organic Spin Valves
J.F.BOBO, B.WAROT-FONROSE, C.VILLENEUVE, E.BEDEL-PEREIRA, I.SEGUY
ONERA, MINC, M2D, LGET
Revue Scientifique : IEEE Transactions on Magnetics, Vol.46, N°6, pp.2090-2093, Juillet 2010 , N° 09756
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121976End-of-range defects in germanium and their role in boron deactivation
F.PANCIERA, P.F.FAZZINI, M.COLLET, J.BOUCHER, E.BEDEL-PEREIRA, F.CRISTIANO
IM2NP, M2D
Revue Scientifique : Applied Physics Letters, Vol.97, N°1, pp.012105-1-012105-3, 7 Juillet 2010 , N° 10502
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122386Influence of Boron-Interstitials Clusters on hole mobility degradation in high dose boron-implanted ultra-shallow junctions
F.SEVERAC, F.CRISTIANO, E.BEDEL-PEREIRA, P.F.FAZZINI, J.BOUCHER, W.LERCH, S.HAMM
N2IS, M2D, Centrotherm, Mattson Thermal
Revue Scientifique : Journal of Applied Physics, Vol.107, N°12, 123711p., 15 Juin 2010 , N° 10421
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122382Perylene-based organic spin valves: influence of the Co deposision process on transport properties
J.F.BOBO, B.WAROT-FONROSE, C.VILLENEUVE, E.BEDEL-PEREIRA, I.SEGUY
CEMES/CNRS, MINC, M2D
Manifestation avec acte : E-MRS Fall Meeting 2009, Varsovie (Pologne), 14-18 Septembre 2009, 3p. , N° 09950
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126781Study of 12-300K photoluminescence of LPCVD grown silicon nanocrystals : effect of excitation energy
K.KOUKOS, E.BEDEL-PEREIRA, G.SARRABAYROUSE, T.C.TSAI, C.T.LEE
PH, M2D, Univ. de Tainan City
Manifestation sans acte : Symposium commemorating the 10th anniversary of the Taiwan-France Scientific Prize, Taipei (Taiwan), 2-3 Septembre 2009, 1p. (Résumé) , N° 09709
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121742Impact of boron-interstitial clusters on Hall scattering factor in high dose boron-implanted ultra-shallow junctions
F.SEVERAC, F.CRISTIANO, E.BEDEL-PEREIRA, P.F.FAZZINI, W.LERCH, S.PAUL
M2D, Mattson
Revue Scientifique : Journal of Applied Physics, Vol.105, N°4, pp.043711-1-043711-6, Février 2009 , N° 09026
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117749Evidence of the carrier mobility degradation in highly B-doped ultra-shallow junctions by Hall effect measurements
F.SEVERAC, F.CRISTIANO, E.BEDEL-PEREIRA, W.LERCH, S.PAUL, H.KHEYRANDISH
M2D, Mattson, CSMA
Revue Scientifique : Materials Science and Engineering: B, Vol.154-155, pp.225-228, Décembre 2008 , N° 08265
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Abstract
Current fabrication processes of MOS source/drain ultra-shallow junctions (dopant implantation in a preamorphised substrate, followed by ultra-rapid anneals at high temperature) generate defects which can degrade their electrical properties. The understanding of the physical phenomena responsible for this degradation is essential for the optimization of the fabrication processes. Among these phenomena, the impact of Boron Interstitial Clusters (BICs) on the carrier mobility has not yet been clearly understood. In this work, we present an empirical method for the self-consistent interpretation of SIMS and Hall effect measurements of boron doped ultra-shallow junctions that allows to estimate the activation level of the doped layers (maximum active dopant concentration, active dose fraction) and, for the case of partially activated structures, to assess whether or not the carrier mobility is affected by the electrically inactive BICs. Both epitaxial and implanted structures were studied. We found that, depending on the fabrication conditions, the maximum active dopant concentrations extracted from the studied samples may differ from the boron solid solubility at the process temperature. In addition, for the partially electrically active structures, a degradation of the drift mobility due to the presence of BICs is shown, which is experimentally confirmed by low temperature Hall effect measurements, indicating the existence of an additional Coulomb-type scattering mechanism.
Mots-Clés / Keywords
Ultra shallow junctions; Hole mobility; Hall effect; Boron interstitial clusters; SIMS;
Etude des mécanismes de luminescence de nanocristaux de silicium élaborés par LPCVD
K.KOUKOS, E.BEDEL-PEREIRA, O.GAUTHIER-LAFAYE
PH
Manifestation sans acte : Journées Nano Micro et Optoélectronique (JNMO'08), Ile d'Oléron (France), 3-6 Juin 2008, 1p. (Résumé) , N° 08808
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