Laboratoire d’Analyse et d’Architecture des Systèmes
A.GHANNAM, C.VIALLON, D.BOURRIER, T.PARRA
MOST, TEAM
Manifestation avec acte : Journées de Charactérisation Microondes et Matériaux (JCMM 2010), Brest (France), 31 Mars - 2 Avril 2010, 4p. , N° 10781
Diffusable
123347D.SERON, A.GHANNAM, L.OURAK, C.VIALLON, T.PARRA
MOST, OLC
Rapport LAAS N°08889, Février 2010
Diffusable
120378A.GHANNAM, C.VIALLON, D.BOURRIER, T.PARRA
MOST, TEAM
Manifestation avec acte : 39th European Microwave Conference : European Microwave week 2009 (EuMA: EuMC), Rome (Italie), 28 Septembre-2 octoibre 2009, pp.1041-1044 , N° 09397
Diffusable
119094M.MENEGHIN, C.VIALLON, T.PARRA
MOST
Manifestation avec acte : NEWCAS - TAISA'09, Toulouse (France), 28 Juin - 1 juillet 2009, 6p. , N° 09311
Diffusable
117890M.MENEGHIN, C.VIALLON, E.TOURNIER, T.PARRA
MOST
Manifestation avec acte : 16èmes Journées Nationales Microondes (JNM 2009), Grenoble (France), 27-29 Mai 2009, 6p. , N° 09306
Diffusable
117880M.CAMUS, B.BUTAYE, L.GARCIA, B.PELLAT, M.SIE, T.PARRA
ST Microelectronics, MOST
Revue Scientifique : IEEE Journal of Solid-State Circuits, Vol.43, N°6, pp.1372-1383, Juin 2008 , N° 07728
Diffusable
Plus d'informations
An integrated 2.4 GHz CMOS receiver front-end according to the IEEE 802.15.4 standard is presented in this paper. It integrates the overall RF part, from the balun up to the first stage of the channel filter, as well as the cells for the LO signal conditioning. The proposed architecture is based on a 6 MHz low-IF topology, which uses an inductorless LNA and a new clocking scheme for driving a passive mixer. When integrated in a 90 nm CMOS technology, the receiver front-end exhibits an area of only 0.07 mm2, or 0.23 mm2 when including an input integrated balun. The overall chip consumes 4 mA from a single 1.35 V supply voltage and it achieves a 35 dB conversion gain from input power in dBm to output voltage in dBvpk, a 7.5 dB NF value, -10 dBm of IIP3 and more than 32 dB of image rejection.
W.KAROUI, T.PARRA
FREESCALE, MOST
Manifestation avec acte : Joint IEEE-NEWCAS and TAISA Conference, Montréal (Canada), 22-25 Juin 2008, 4p. , N° 08054
Diffusable
Plus d'informations
This paper proposes a circuit solution for monolithic HBT RF Power Amplifier protection against failures that occur when a PA under extreme power conditions is exposed to output impedance mismatches. Both high voltage operation and high dissipated power conditions are addressed by respectively integrating a parallel base resistor and a simple current sensor associated to a feedback on biasing circuit. Experiments confirm the effectiveness of the protection which is indexed on the bias level and acts for all output loads up to VSWR of 10:1, whereas output power and power efficiency on a 50 Ohms load are not affected.
M.CAMUS, B.BUTAYE, L.GARCIA, M.SIE, B.PELLAT, T.PARRA
ST Microelectronics, MOST
Manifestation avec acte : IEEE International Solid-State Circuits Conference (ISSCC 2008), San Francisco (USA), 3-7 Février 2008, 3p. , N° 08853
Diffusable
118115M.CAMUS, B.BUTAYE, T.PARRA
ST Microelectronics, MOST
Rapport LAAS N°07730, Décembre 2007, 3p.
Diffusable
Plus d'informations
W.KAROUI, T.PARRA, P.SAVARY, R.JAOUI
FREESCALE, MOST
Rapport LAAS N°07735, Décembre 2007, 17p.
Non diffusable
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