Laboratoire d’Analyse et d’Architecture des Systèmes
V.BARDINAL, B.REIG, T.CAMPS, D.BARAT, E.DARAN, J.B.DOUCET, C.TURCK, J-P.MALVAL, D-J.LOUGNOT, O.SOPPERA
PH, N2IS, TEAM, IS2M
Conférence invitée : SPIE Photonics Europe, Bruxelles (Belgique), 12-16 Avril 2010, 12p. , N° 10388
Diffusable
121958B.REIG, T.CAMPS, D.BOURRIER, E.DARAN, C.VERGNENEGRE, V.BARDINAL
PH, N2IS, TEAM, 2I
Manifestation avec acte : SPIE Photonics Europe, Bruxelles (Belgique), 12-16 Avril 2010, 8p. , N° 10389
Diffusable
121960D.LAGRANGE, T.CAMPS
2I, N2IS
Rapport LAAS N°10070, Février 2010
Diffusable
120443V.BARDINAL, B.REIG, T.CAMPS, E.DARAN, J.B.DOUCET, C.TURCK, J-P.MALVAL, D-J.LOUGNOT, O.SOPPERA
PH, N2IS, TEAM, IS2M
Revue Scientifique : Applied Physics Letters, Vol.96, 051114p., Février 2010 , N° 10044
Diffusable
120377V.BARDINAL, C.VERGNENEGRE, E.DARAN, J.B.POURCIEL, J.B.DOUCET, T.CAMPS
2I, PH, TEAM, N2IS
Revue Scientifique : Techniques de l'Ingénieur, N°RE 138, pp.RE 138-1-RE 138-9, Février 2010 , N° 09398
Non diffusable
121874D.PELLION, K.JRADI, F.MOUTIER, F.OMS-ELISABELAR, C.MAGENC, D.ESTEVE, A.R.BAZER-BACHI, T.CAMPS
CESR, N2IS
Revue Scientifique : Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol.610, N°1, pp.410-414, Octobre 2009 , N° 09946
Lien : http://hal.archives-ouvertes.fr/hal-00637352/fr/
Diffusable
Plus d'informations
Geiger APD technology, which has been used for a few years now, is evolving towards better performances, including integration in multifunctional Microsystems; one such achievement is today the so-called SiPM [ref 1]. The present work has been conducted by a consortium of researchers from CESR and LAAS/CNRS and the manufacturing of components was achieved in the clean room of LAAS/CNRS. We present here an original N/P technology of photodiode, designed so as to offer a very good homogeneity in the electrical operating characteristics. For this, we have chosen a design and technological process which defines the breakdown voltage from the substrate doping. We present the technological process which we developed, in which we took a special care to maintain, by low transit temperature processes, at the highest quality level the initial characteristics of the materials. We will also present the performances of the diodes produced, with sizes ranging from 10 to 100µm, as a function of many parameters (gain, dark current, etc). We also produced SiPM, and also 8X8 arrays of SiPM. Typical characteristics for a single diode are a Vbr between 43V and 44V, and a dark current below 1 pA at ambient temperature. But the most important feature seems to be the high homogeneity of these performances all over the wafer surface. This gives us a great confidence in the next step of our work, which is the manufacturing of very high sensitivity imaging devices.
B.REIG, V.BARDINAL, T.CAMPS, C.LEVALLOIS, C.VERGNENEGRE, J.B.POURCIEL, J.B.DOUCET, E.DARAN
PH, N2IS, INSA Rennes, 2I, TEAM
Manifestation sans acte : Optique 2009. Horizons de l'Optique, Lille (France), 6-9 Juillet 2009, 3p. , N° 09387
Diffusable
Plus d'informations
B.MARTY, T.CAMPS, J.TASSELLI, A.MARTY, D.LAGRANGE
N2IS, 2I
Manifestation avec acte : The 15th International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers 2009), Denver (USA), 21-25 Juin 2009, 4p. , N° 09163
Diffusable
117980T.CAMPS, B.MARTY, J.TASSELLI, A.MARTY, D.LAGRANGE
N2IS, 2I
Manifestation avec acte : Symposium on Design, Test, Integration & Packaging of MEMS/MOEMS (DTIP'2009), Rome (Italie), 1-3 Avril 2009, 6p. , N° 09158
Diffusable
117155B.MARTY, T.CAMPS, J.TASSELLI, A.MARTY, L.BOUSCAYROL, J.C.MARROT
N2IS, TEAM
Manifestation avec acte : 1st European Conference on Microfluidics (MicroFlu'08), Bologne (Italie), 10-12 Décembre 2008, 7p. , N° 08515
Diffusable
Plus d'informations