Laboratoire d’Analyse et d’Architecture des Systèmes
M. M.JATLAOUI, F.CHEBILA, P.PONS, H.AUBERT
MINC
Manifestation avec acte : Journées Maghreb-Europe, Tabarka (Tunisie), 20-22 Octobre 2010, 1p. (Résumé) , N° 10575
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122915U.ZAGHLOUL HEIBA, M.KOUTSOURELI, H.WANG, F.COCCETTI, G.J.PAPAIOANNOU, P.PONS, R.PLANA
MINC, Athenes
Manifestation avec acte : European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF 2010), Gaeta (Italie), 11-15 Octobre 2010, 6p. , N° 10632
Diffusable
122856H.YOUSSEF, A.FERRAND, P.F.CALMON, P.PONS, R.PLANA
MINC, ICA, TEAM
Manifestation avec acte : European Symposium on Reliability of Electron Devices Failure Physics and Analysis (ESREF 2010), Gaeta (Italie), 11-15 Octobre 2010, 6p. , N° 10581
Diffusable
122858U.ZAGHLOUL HEIBA, B.BHUSHAN, P.PONS, G.J.PAPAIOANNOU, F.COCCETTI, R.PLANA
MINC, NLBB, Athenes
Manifestation avec acte : International Symposium on Science and Technology of Materials, Interfaces and Processing (AVS 2010), Albuquerque (USA), 17-22 Octobre 2010, 1p. , N° 10968
Lien : http://hal.archives-ouvertes.fr/hal-00670146
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Plus d'informations
Dielectric charging is among the major reliability issues that have prevented the commercialization of RF-MEMS Capacitive switches in spite of the extensive study performed on the topic. Moreover, a little work has been performed to study the effect of the relative humidity (RH) and environment gases on the dielectric charging process. In this work we present the effect of RH and the environment gases on the charging/discharging processes in PECVD silicon nitride films based on Kelvin Probe Force Microscopy (KPFM) methodology. The measurements have been performed in ambient air and under N2 flow, both under different RH levels (from 6% to 40% RH). In addition, the influence of the dielectric film thickness, SiN deposition conditions and the substrate nature on the charging process have been investigated under different environment conditions. This has been done through depositing SiN films with different thicknesses ranges from 100nm to 400nm over bare silicon substrates and over evaporated Au layers and using both Low Frequency(LF) and High Frequency(HF) PECVD deposition modes.
A.BROUE, J.DHENNIN, P.L.CHARVET, P.PONS, N.BEN JEMAA, F.COCCETTI, R.PLANA
NOVAMEMS, CEA, MINC, Rennes
Manifestation avec acte : IEEE Holm Conference on Electrical Contacts, Charleston (USA), 4-7 Octobre 2010, 10p. , N° 10957
Lien : http://hal.archives-ouvertes.fr/hal-00670153
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A systematic comparison between several pairs of contact materials based on an innovative methodology early developed at NOVA MEMS is hereby presented. The technique exploits a commercial nanoindenter coupled with electrical measurements, and test vehicles specially designed in order to investigate the underlying physics driving the surface-related failure modes. The study provides a comprehensive understanding of micro-contact behavior with respect to the impact of low- to medium levels of electrical current. The decrease of the contact resistance, when the contact force increases, is measured for contact pairs of soft material (Au/Au contact), harder materials (Ru/Ru and Rh/Rh contacts) and mixed configuration (Au/Ru and Au/Ni contacts). The contact temperatures have been calculated and compared to the theoretical values of softening temperature for each couple of contact materials. This threshold temperature is reached for gold, ruthenium and rhodium material, with different levels of current intensity. In spite of that, no oftening behavior has been observed for mixed contact at the theoretical softening temperature of both materials. Hence, considering the sensitivity to power handling and the related failure echanisms, namely the contact adhesion, the enhanced resilience of the bimetallic contacts Au/Ru and Au/Ni was demonstrated. Finally focusing on the temperature distribution around the hottest levels on the surface contact interface, these results have been theoretically investigated.
M. M.JATLAOUI, F.CHEBILA, S.BOUAZIZ, P.PONS, H.AUBERT
MINC
Manifestation avec acte : European Microwave Week 2010 (EuMC 2010), Paris (France), 26 Septembre - 1 Octobre 2010, pp.1106-1109 , N° 10395
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123355S.BOUAZIZ, M. M.JATLAOUI, D.MINGLI, P.PONS, H.AUBERT
MINC, EXT, M2D
Manifestation avec acte : Micromechanics and Micro systems Europe Workshop (MME'10), Enschende (Pays Bas), 26-29 Septembre 2010, 3p. , N° 10467
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124061I.EL GMATI, P.F.CALMON, R.FULCRAND, S.PINON, A.BOUKABACHE, P.PONS, M.A.KALLALA
TEAM, N2IS, MINC, Monastir
Manifestation avec acte : Micromechanics and Micro systems Europe Workshop (MME'10), Enschende (Pays Bas), 26-29 Septembre 2010, 4p. , N° 10469
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124060T.THAI, F.CHEBILA, M. M.JATLAOUI, P.PONS, H.AUBERT, G.R.DEJEAN, M.M.TENTZERIS, R.PLANA
MINC, Microsoft Research, Georgia Institute
Manifestation avec acte : European Microwave Week 2010 (EuMC 2010), Paris (France), 26 Septembre - 1 Octobre 2010, pp.45-48 , N° 10433
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123354I.EL GMATI, P.F.CALMON, A.BOUKABACHE, P.PONS, H.BOUSSETTA, M.A.KALLALA, KBESBES
TEAM, N2IS, MINC, M2D, Monastir
Manifestation avec acte : Eurosensors XXIV, Linz (Autriche), 5-8 Septembre 2010, 2p. , N° 10428
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