405documents trouvés
Finite element based surface roughness study for ohmic contact of microswitches
H.LIU, D.LERAY, P.PONS, S.COLIN, A.BROUE
MINC, LGMT-INSAT, ICA, NOVAMEMS
Manifestation avec acte : IEEE Holm Conference on Electrical Contacts 2012 58 du 23 septembre au 26 septembre 2012, Portland (USA), 2012, pp.220-229 , N° 12397
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128457Design and development of a novel passive wireless ultrasensitive RF temperature transducer for remote sensing
T.THAI, M. M.JATLAOUI, F.CHEBILA, H.AUBERT, P.PONS, G.R.DEJEAN, M.M.TENTZERIS, R.PLANA
Microsoft Research, Georgia Institute, MINC
Revue Scientifique : IEEE Sensors Journal, Vol.12, N°9, pp.2756-2766, Septembre 2012 , N° 12468
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127988Modelling of thermal behavior N-Doped silicon resistor
F.KERROUR, A.BOUKABACHE, P.PONS
Constantine, N2IS, MINC
Revue Scientifique : Journal of Sensor Technology, Vol.2, N°3, pp.132-137, Septembre 2012 , N° 12591
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128459Wireless communicating nodes at 60GHz integrated on flexible substrate for short distance instrumentation in aeronautics and space
M. M.JATLAOUI, D.DRAGOMIRESCU, M.ERCOLI, M.KRAEMER, S.CHARLOT, P.PONS, H.AUBERT, R.PLANA
MINC, TEAM
Revue Scientifique : International Journal of Microwave and Wireless Technologies, Vol.4, N°1, pp.109-117, Février 2012 , N° 11511
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126589Nanotribology-based novel characterization techniques for the dielectric charging failure mechanism in electrostatically actuated NEMS/MEMS devices using force–distance curve measurements
U.ZAGHLOUL HEIBA, B.BHUSHAN, G.J.PAPAIOANNOU, F.COCCETTI, P.PONS, R.PLANA
MINC, NLBB, Athenes
Revue Scientifique : Journal of Colloid and Interface Science, Vol.365, N°1, pp.236-253, Janvier 2012, http://dx.doi.org/10.1016/j.jcis.2011.08.005 , N° 11544
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125538Impact of the surface roughness description on the electrical contact resistance of ohmic switches under low actuation forces
F.PENNEC, D.PEYROU, D.LERAY, P.PONS, R.PLANA, F.COURTADE
MINC, M2D, CNES
Revue Scientifique : IEEE Transactions on Components, Packaging and Manufacturing Technology, Vol.2, N°1, pp.85-94, Janvier 2012 , N° 12044
Lien : http://hal.archives-ouvertes.fr/hal-00670045
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Abstract
At the present time, the insertion of radio frequency microelectromechanical switches into real architecture requires reduced actuation voltages, reduced dimensions, and better control of the electrical and electromechanical behavior that gives more importance to surface effects, their understanding, and modeling. The use of such devices requires the development of methods for estimating the contact performances as a function of surface roughness, contact materials, and contact topologies. With increase in computation capabilities, the rough surface topography can be implemented in the finite element model but implies long calculation times or even calculation overloading if a high definition of the roughness is desired. To reduce these limitations, assumptions on the microgeometry are required. This paper treats, by use of finite element modeling, the influence of the definition of roughness of contacting switch members on the electrical contact resistance of resistive switches, and investigates the error introduced by using a minimum defined atomic force microscope sampling interval of 10 nm. The present numerical analysis is implemented for switch test structures.
Novel micromachined lumped band pass filter for 5.2 GHz WLAN applications
A.MULLER, D.NECULOIU, A.CISMARU, P.PONS, R.PLANA, D.DASCALU, A.MULLER
IMT, MINC
Revue Scientifique : International Journal of Electronics and Communications , Vol.65, N°12, pp.1050-1053, Décembre 2011 , N° 11523
Lien : http://hal.archives-ouvertes.fr/hal-00630627/fr/
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Abstract
This paper describes the design, manufacturing and experiments of a lumped element band pass filter in a new topology. The design starts from a second order capacitive coupled resonator topology. An additional series inductor is inserted in the filter classical topology, for shifting two transmission zeros on the real frequency axes in the filter's band stop, to improve the high frequency response. Design equations for the new band stop resonance frequency are presented together with the analysis of the correspondence between the band pass and band stop attenuation vs. the quality factor of the shunt and series inductors used. The filter is supported on a 6.4 m thin dielectric membrane, and is manufactured using silicon micromachining, in CPW technology. Measurements illustrated a minimum 2.75 dB insertion loss at 5.5 GHz in the band pass, and more than 40 dB attenuation, at 8 GHz.
Effect of deposition reactive gas ratio, RF power and substrate temperature on the charging/discharging processes in PECVD silicon nitride films based on induced surface potential and adhesive force measurements using atomic force microscopy
U.ZAGHLOUL HEIBA, G.J.PAPAIOANNOU, B.BHUSHAN, H.WANG, F.COCCETTI, P.PONS, R.PLANA
MINC, Athenes, NLBB
Revue Scientifique : Journal of Microelectromechanical Systems, Vol.20, N°6, pp.1395-1418, Décembre 2011 , N° 11795
Lien : http://hal.archives-ouvertes.fr/hal-00670055
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Abstract
The dependence of the electrical properties of silicon nitride, which is a commonly used dielectric in nanoand micro-electromechanical systems (NEMS and MEMS), on the deposition conditions used to prepare it and, consequently, on material stoichiometry has not been fully understood. In this paper, the influence of plasma-enhanced chemical vapor deposition conditions on the dielectric charging of SiNx films is investigated. The work targets mainly the dielectriccharging phenomenon which constitutes a major failure mechanism in electrostatically driven NEMS/MEMS devices and particularly in capacitive MEMS switches. The charging/discharging processes are studied using two nanoscale characterization techniques: Kelvin probe force microscopy (KPFM) and, for the first time, force-distance curve (FDC) measurements. KPFM is used to investigate dielectric charging at the level of a single asperity, while FDC is employed to measure the multiphysics coupling between the charging phenomenon and tribological issues, mainly meniscus force. The electrical properties of the SiNx films obtained from both techniques show a very good correlation. X-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy material characterization techniques are also used to determine the compositions and chemical bonds, respectively, of the SiNx films. An attempt to correlate between the chemical and electrical properties of SiNx films is made.
A newly developed radio frequency wireless passive highly sensitive strain transducer
T.THAI, H.AUBERT, P.PONS, G.R.DEJEAN, E.TENTZERIS, R.PLANA
Microsoft Research, MINC
Manifestation avec acte : IEEE SENSORS 2011, Limerick (Irelande), 28-31 Octobre 2011, 2p. , N° 11785
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126513A novel wireless passive temperature sensor utilizing microfluidic principles in millimeter-wave frequencies
A.TRAILLE, S.BOUAZIZ, H.AUBERT, P.PONS, E.TENTZERIS
Georgia Institute, MINC
Manifestation avec acte : IEEE SENSORS 2011, Limerick (Irelande), 28-31 Octobre 2011, 2p. , N° 11784
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