83documents trouvés
The BI-IGBT: a low losses power structure by IGBT parallel association
C.CARAMEL, R.DE MAGLIE, P.AUSTIN, J.L.SANCHEZ, J.LE GAL, E.IMBERNON, J.P.LAUR, D.FLORES, S.HIDALGO, J.MILLAN, J.REBOLLO
ISGE, TEAM, Université de Barcel
Revue Scientifique : Semiconductor Science and Technology, Vol.23, N°5, 055022p., Mai 2008 , N° 07515
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127031Spiral type micro-inductor with CoNiFe core
T.EL MASTOULI, J.P.LAUR, J.L.SANCHEZ, M.BRUNET, D.BOURRIER, M.DILHAN, J.F.BOBO
ISGE, TEAM, ONERA
Rapport LAAS N°08114, Mars 2008, 4p.
Non diffusable
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Mots-Clés / Keywords
Electrochemical processes; Magnetic devices; DC-DC power conversion;
New self-switching converters
F.RICHARDEAU, N.ROUX, H.FOCH, J.P.LAUR, M.BREIL, J.L.SANCHEZ, F.CAPY
LAPLACE, ISGE
Revue Scientifique : IEEE Transactions on Power Electronics, Vol.23, N°2, pp.802-812, Mars 2008 , N° 08605
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Abstract
This paper presents an original concept in which integrated over-voltage and/or over-current protections of power devices are used to produce a self-switching operation. Such a commutation is shown as a possible combination with conventional forced-switching and spontaneous-switching to simplify direct regenerative ac-dc conversion, insulating dc-ac-dc conversion and finally direct ac-ac conversion. Experimental results prove the feasibility of the concept through which the self turn-off operation is likely to offer the best practical gains.
Micro-inductors integrated on silicon for dc-dc converters
T.EL MASTOULI, J.P.LAUR, J.L.SANCHEZ, M.BRUNET, D.BOURRIER, M.DILHAN
ISGE, TEAM
Manifestation avec acte : SPIE International Symposium on Micromachining and Microfabrication Process Technology XIII, San José (USA), 19-24 Janvier 2008 , N° 07706
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Abstract
For applications such as computers, cellular telephones and Microsystems, it is essential to reduce the size and the weight of electronic devices. More particularly, this evolution implies the miniaturization of high effi ciency on-chip dc-dc converters providing low voltage to the various ICs. Therefore, fabrication of magnetic components dedicated to power conversion becomes necessary. To miniaturize inductors, the micromachining techniques provide solutions based on low-temperature process compatible with active part of the converter. The proposed inductor topology is based on a spiral-type structure which consists in a copper conductor sandwiched between two CoNiFe (60%- 15%-25%) layers shielding the magnetic fl ux of the inductor winding. Considering a 1-5 MHz operating switching frequency, a laminated core has been investigated in order to reduce eddy-current induced in the core. We have made several investigations on the electroplating baths parameters by changing temperature, pH and current density values in order to obtain optimum magnetic properties (Bsat=2.3T, low Hc, ¼r=250, resistivity>30 ¼Ohm.cm). These proprieties are measured by SQUID and the composition is analyzed using quantitative energy dispersive X-ray analysis. Research reported in this paper is an example relative to the microinductors fabrication for micropower applications. It shows the feasibility of a spiral inductor structure with a laminated core adequate for a high frequency switching operation. The fi nal paper will describe with more details the characterizations of a ten turns prototype exhibiting a 1¼H inductance value.
Mots-Clés / Keywords
Integrated inductors; Spiral; Electroplating; CoNiFe; CMP; DC-DC converters;
Simulation based analysis of a monolithically integrated fast and slow IGBT structure (U)
J.LE GAL, R.DE MAGLIE, C.CARAMEL, A.BOURENNANE, P.AUSTIN, J.L.SANCHEZ, J.P.LAUR, D.FLORES, J.MILLAN, J.REBOLLO
ISGE, Université de Barcel
Manifestation avec acte : 12th European Conference on Power Electronics and Applications (EPE 2007), Aalborg (Danemark), 2-5 Septembre 2007, 10p. , N° 07651
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Mots-Clés / Keywords
IGBT; Functional integration;
Performance of 3D capacitors integrated on silicon for DC-DC converter applications
A.BENAZZI, M.BRUNET, P.DUBREUIL, N.MAURAN, L.BARY, J.P.LAUR, J.L.SANCHEZ, K.ISOIRD
ISGE, TEAM, 2I
Manifestation avec acte : 12th European Conference on Power Electronics and Applications (EPE 2007), Aalborg (France), 2-5 Septembre 2007, 9p. , N° 07511
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Mots-Clés / Keywords
Trench; Schottky contact; Phosphorus diffusion; DC-DC power converter; Deep reactive ion etching; Integrated capacitor;
Evolution of the classical functional integration towards a 3D heterogeneous functional integration
J.L.SANCHEZ, A.BOURENNANE, M.BREIL, P.AUSTIN, M.BRUNET, J.P.LAUR
ISGE
Conférence invitée : 14th International Conference Mixed Design of Integrated Circuits and Systems, Ciechocinek (Pologne), 21-23 Juin 2007, 11p. , N° 07344
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Abstract
This paper presents a brief overview of the monolithic integration in the field of power electronics. Emphasis is mainly put on the functional integration concept. The role that this mode of integration, according to its classical definition, played to enable the monolithic integration of the power device with auxiliary elements (mainly protections and supply) for the realization of new functions dedicated for medium power applications is highlighted. At that end, some of the recent realizations are described in order to showcase some of the potentialities of this mode of integration. Furthermore, to extend further the classical integration towards a 3D "heterogeneous" functional integration, an example that highlights the improvements that should be achieved at the devices level as well as at the devices environment level, for the development of new power integrated functions for ac applications, is discussed. The last part deals with the technology process evolution for the realization of the active devices as well as the passive elements. In this part, a flexible technological process and its importance in the development of more complex functions, implemented in 3D within the silicon die volume and at the surface, is described in more detail.
Mots-Clés / Keywords
Functional integration; 3D heterogeneous integration; Microfabrication techniques; Power integration;
Design of an integrated self-switching mode device for power converters
F.CAPY, A.BOURENNANE, M.BREIL, F.RICHARDEAU, E.IMBERNON, J.L.SANCHEZ, J.P.LAUR, P.AUSTIN
ISGE, LEEI, TEAM
Manifestation avec acte : 14th International Conference Mixed Design of Integrated Circuits and Systems, Ciechocinek (Pologne), 21-23 Juin 2007, 6p. , N° 07148
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Abstract
In this paper, we present a design procedure for the integration of a new specific function based on the association of a ZVS mode thyristor and a circuit breaker dedicated to self-switching mode power converters. This function, based on the functional integration concept, monolithically associates protection, self-drive and power switch functions. This function uses an original switching mode of operation. After presenting the characteristics of the function and the function specifications, we focus on the different design steps: function optimization and cells sizing using 2D electrical and technological simulations, and mask design.
Mots-Clés / Keywords
Power functional integration; ZVS mode thyristor-circuit breaker function; 2D numerical simulation; Design;
Liquid loading of silicon-based cantilevers using electrowetting actuation for microspotting applications
T.LEICHLE, D.SAYA, P.BELAUBRE, J.B.POURCIEL, F.MATHIEU, J.P.LAUR, L.NICU, C.BERGAUD
NANO, 2I, CIP, CNRS-IIS
Revue Scientifique : Sensors and Actuators A: Physical, Vol.132, N°2, pp.590-596, Novembre 2006 , N° 05027
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109327Bi-IGBT: a new low losses power switch integrating fast and slow IGBT structures
C.CARAMEL, R.DE MAGLIE, P.AUSTIN, J.L.SANCHEZ, E.IMBERNON, J.P.LAUR, D.FLORES, S.HIDALGO, J.REBOLLO
ISGE, CIP, Université de Barcel
Manifestation avec acte : 8th International Seminar on Power Semiconductors (ISPS'06), Prague (République Tchèque), 29 Août - 1er Septembre 2006, pp.139-144 , N° 06408
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