507documents trouvés
Smart Homes - Current Features and Future perspectives
M.CHAN, E.CAMPO, D.ESTEVE, J.Y.FOURNIOLS
N2IS
Revue Scientifique : Maturitas-An international journal of midlife heath and beyond, Vol.64, N°2, pp.90-96, 20 Octobre 2009 , N° 09620
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119283Conception et intégration d'un micro initiateur sécurisé sur Si : Process d'intégration des protections électriques et mécaniques
H.PEZOUS, X.DOLLAT, S.CHARLOT, V.CONEDERA, L.SALVAGNAC, C.ROSSI, D.ESTEVE
N2IS, 2I, TEAM
Rapport de Contrat : Rapport REI micor initiateur contrat DGA Nexter Munitions n° 08191, Octobre 2009 , N° 09591
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119159Capacitive RF MEMS analytical predictive reliability
M.MATMAT, F.COCCETTI, A.MARTY, R.PLANA, C.ESCRIBA, J.Y.FOURNIOLS, D.ESTEVE
2I, N2IS, MINC
Manifestation avec acte : 20th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2009), Arcachon (France), 5-9 Octobre 2009, pp.1304-1308 , N° 09507
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Mots-Clés / Keywords
Charging effect; Micro system modelling; Reliability; RF MEMS; Virtual prototype; VHDL-AMS;
APD photodetectors in the Geiger photon counter mode
D.PELLION, K.JRADI, F.MOUTIER, F.OMS-ELISABELAR, C.MAGENC, D.ESTEVE, A.R.BAZER-BACHI, T.CAMPS
CESR, N2IS
Revue Scientifique : Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, Vol.610, N°1, pp.410-414, Octobre 2009 , N° 09946
Lien : http://hal.archives-ouvertes.fr/hal-00637352/fr/
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Abstract
Geiger APD technology, which has been used for a few years now, is evolving towards better performances, including integration in multifunctional Microsystems; one such achievement is today the so-called SiPM [ref 1]. The present work has been conducted by a consortium of researchers from CESR and LAAS/CNRS and the manufacturing of components was achieved in the clean room of LAAS/CNRS. We present here an original N/P technology of photodiode, designed so as to offer a very good homogeneity in the electrical operating characteristics. For this, we have chosen a design and technological process which defines the breakdown voltage from the substrate doping. We present the technological process which we developed, in which we took a special care to maintain, by low transit temperature processes, at the highest quality level the initial characteristics of the materials. We will also present the performances of the diodes produced, with sizes ranging from 10 to 100µm, as a function of many parameters (gain, dark current, etc). We also produced SiPM, and also 8X8 arrays of SiPM. Typical characteristics for a single diode are a Vbr between 43V and 44V, and a dark current below 1 pA at ambient temperature. But the most important feature seems to be the high homogeneity of these performances all over the wafer surface. This gives us a great confidence in the next step of our work, which is the manufacturing of very high sensitivity imaging devices.
Fouling measurement using a thermal-based microsystem
J.CRATTELET, A.BOUKABACHE, L.AURET, L.FILLAUDEAU, D.ESTEVE
NEOSENS, N2IS, LISBP
Manifestation avec acte : 20th MicroMechanics Europe workshop (MME 2009), Toulouse (France), 20-22 Septembre 2009 , N° 09435
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119562Technologie et Simulation Matériaux Energétiques "on a chip". Simulation 1D du dépot multicouhes. De l'ab initio au microsciopique
A.HEMERYCK, M.PETRANTONI, A.ESTEVE, C.ROSSI, M.DJAFARI ROUHANI, G.LANDA, D.ESTEVE
N2IS
Rapport de Contrat : DGA REI Micro Initiateur N° 0634042, Septembre 2009, 53p. , N° 09649
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119338Capacitive RF MEMS analytical predictive reliability and lifetime characterization
M.MATMAT, F.COCCETTI, A.MARTY, R.PLANA, C.ESCRIBA, J.Y.FOURNIOLS, D.ESTEVE
N2IS, 2I, MINC
Revue Scientifique : Microelectronics Reliability, Vol.49, N°9-11, pp.1304-1308, Août 2009, doi:10.1016/j.microrel.2009.06.049 , N° 09506
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Abstract
The reliability of integrated systems is considered as a major obstacle in their development. The goal of this work is to estimate the lifetime of RF MEMS capacitive switch devices. This is performed by combining the functional and physical failure analysis models using the VHDL-AMS language. The physics of charging effects along with mechanical behavior of the membrane are introduced simultaneously to determine the time to failure.
Investigation of steady and unsteady thermal regimes to monitor fouling in industrial processes
J.CRATTELET, L.AURET, P.DEBREYNE, A.BOUKABACHE, D.ESTEVE, L.FILLAUDEAU
NEOSENS, INRA, Villeneuve, N2IS, LISBP
Manifestation avec acte : 8th World Congress of Chemical Engineering, Montréal (Canada), 23-27 Août 2009, 6p. , N° 09455
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119455Fabrication, assembly and tests of a MEMS based safe, arm and fire device
H.PEZOUS, M.SANCHEZ, F.MATHIEU, X.DOLLAT, S.CHARLOT, G.A.ARDILA RODRIGUEZ, C.ROSSI, D.ESTEVE
N2IS, MA2-UPC, 2I, TEAM
Manifestation sans acte : E-MRS 2009 , Strasbourg (France), 8-12 Juin 2009 , N° 09606
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120155Al/Ni intermetallic energetic system : ab initio computational approach
M.PETRANTONI, A.HEMERYCK, J.M.DUCERE, A.ESTEVE, C.ROSSI, M.DJAFARI ROUHANI, D.ESTEVE, G.LANDA
N2IS
Manifestation sans acte : E-MRS 2009 , Strasbourg (France), 8-12 Juin 2009 , N° 09661
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