183documents trouvés
Physicochemical characterization of annealed polySi/NIDOS/SiO2 structures
R.MAHAMDI, L.SACI, F.MANSOUR, P.TEMPLE BOYER, E.SCHEID, L.JALABERT
Univ Hadj Lakdar , Constantine, M2D, TEAM
Revue Scientifique : Spectroscopy Letters, Vol.2, pp.347-353, Mars 2009 , N° 07732
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Mots-Clés / Keywords
Annealing; NIDOS; Physicochemical; Polysilicon;
Nitrogen doped silicon films for MOS structures: simulation, modelling and characterization
R.MAHAMDI, F.MANSOUR, HBOURIDAH, P.TEMPLE BOYER, E.SCHEID, L.JALABERT
Univ Hadj Lakdar , Constantine, M2D, TEAM
Revue Scientifique : Microelectronics Journal, Vol.40, N°1, pp.1-4, Janvier 2009 , N° 07714
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Mots-Clés / Keywords
Activation; B-N bond; Crystallinity; Diffusion ; Resistivity;
ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices
K.GALICKA-FAU, M.ANDRIEUX, C.LEGROS, I.GALLET, M.BRUNET, E.SCHEID, S.SCHAMM
LEMHE-CNRS, ISGE, M2D, CEMES/CNRS
Revue Scientifique : ECS Transactions , Vol.25, N°8, pp.1121-1128, 2009 , N° 09611
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123462Boron diffusion and activation in polysilicon multilayer films for P+MOS structure: characterization and modeling
R.MAHAMDI, L.SACI, F.MANSOUR, P.TEMPLE BOYER, E.SCHEID, L.JALABERT
Univ Hadj Lakdar , Constantine, M2D, TEAM
Revue Scientifique : Microelectronics Journal, Vol.40, N°1, pp.1-4, Janvier 2009 , N° 07713
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Mots-Clés / Keywords
Polysilicon; Diffusion ; Model; SIMS profile;
Detailed investigation of Ge-Si interdiffusion in the full range of Si1-xGex (0<x<1) composition
M.GAVELLE, E.M.BAZIZI, E.SCHEID, P.F.FAZZINI, F.CRISTIANO, C.ARMAND, W.LERCH, S.PAUL, Y.CAMPIDELLI, A.HALIMAOUI
M2D, INSAT, Mattson, ST Microelectronics
Revue Scientifique : Journal of Applied Physics, Vol.104, N°11, pp.113524-1-113524-7, Décembre 2008 , N° 08652
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Abstract
Based on the recently developed MCs2 + secondary ion mass spectrometry methodology, the GeSi interdiffusion has been investigated, using Ge(:B) solid sources, for Ge concentrations between 0 and 100 at. %. A strong dependence of the interdiffusion with the Ge content of SiGe alloys, formed during annealing, has been shown. The BoltzmannMatano method was used to extract the interdiffusivity values for all the temperatures studied (750, 800, 850, and 900 °C) in the full range of SiGe compositions. Two regimes of interdiffusion have been identified, both exhibiting an exponential increase in the interdiffusion coefficient as a function of the Ge concentration. The high Ge content regime (>65 at. %) is in good agreement with the values known in the "extreme" cases of Ge diffusion in Si (0 at. %), Ge self-diffusion, and Si diffusion in Ge (100 at. %), while in the low Ge content regime (<50 at. %), the presence and evolution of misfit dislocation can explain the important values of interdiffusivity found in this work. The observed results are perfectly reproduced by a simple empirical model in which the effect of the Ge concentration and the presence of misfit dislocations are taken into account. Based on the evolution of B delta layers (in Si) and Ge depth profiles during NH3 annealing, we showed that the GeSi interdiffusion is predominately assisted by a vacancy mechanism with a slightly interstitial contribution in the full range of Ge concentrations. We have estimated the interstitial fraction coefficient, fGeSiI, to ~ 0.17 at 900 °C. Finally, the effect of in situ B doping is studied, which is found to induce a retardation of the GeSi interdiffusion.
Study of silicon-germanium interdiffusion from pure germanium deposited layers
M.GAVELLE, E.M.BAZIZI, E.SCHEID, C.ARMAND, P.F.FAZZINI, O.MARCELOT, Y.CAMPIDELLI, A.HALIMAOUI, F.CRISTIANO
M2D, INSAT, CEMES/CNRS, ST Microelectronics
Revue Scientifique : Materials Science and Engineering: B, Vol.154-155, pp.110-113, Décembre 2008 , N° 08654
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Abstract
We have studied the Ge-Si interdiffusion from structures in which not, vert, similar300 nm-thick pure Ge(:B) layers were grown on Si 200 mm substrates by CVD at 450 °C. As-grown samples were capped with SiO2 and then annealed in the 750-900 °C range for various times. Using the secondary ion mass spectrometry (SIMS) MCs2+ methodology, we measures precisely the Ge diffused profiles. Boltzmann-Matano analysis was used to extract the interdiffusion coefficients. Si-Ge interdiffusion is found to be strongly dependent on the Ge concentration. Also, an effect of dislocations near the Ge/Si original interface is suggested by our results. A physical model including the various observed effects is proposed, that gives a very good agreement with experiments. Finally, we show that the effect of the in situ B doping of the pure Ge layer is to reduce the interdiffusion.
Mots-Clés / Keywords
Interdiffusion; Germanium; Silicon; CVD; SIMS; MCs2+; Boltzmann-Matano; Defects; Modeling;
Physico-chemical properties of SiOxNy thin films
R.MAHAMDI, L.SACI, F.MANSOUR, C.MOLLIET, P.TEMPLE BOYER, E.SCHEID
Constantine, M2D
Manifestation avec acte : 16th IEEE International Conference on Networks (ICON 2008), New Delhi (Inde), 12-14 Décembre 2008, 13p. , N° 08780
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Mots-Clés / Keywords
Silicon oxynitride; FTIR; Bonds;
Rapport final du laboratoire commun LISPA
P.ALOISI, C.ALONSO, M.BAFLEUR, V.BOITIER, F.CAIGNET, P.DUBREUIL, B.ESTIBALS, E.IMBERNON, K.ISOIRD, H.E.DKOTB MAHFOZ, N.MAURAN, F.MORANCHO, N.NOLHIER, J.ROIG GUITART, B.ROUSSET, C.SALAMERO, J.L.SANCHEZ, E.SCHEID, H.TRANDUC, B.CHAUDRET, M.KHAN, A.MAISONNAT, C.ESTOURNES, J.L.CHAPTAL, A.DERAM, R.ESCOFFIER, U.MONIRAT, P.RENAUD, J.M.REYNES, J.SHEPHERD, E.STEFANOV, B.VRIGNON, L.CALVENTE, L.MARTINEZ, E.VIDAL, P.ARTILLAN, B.BERNOUX, A.GENDRON, N.LACRAMPE, L.SAINT-MACARY, J.B.SAUVEPLANE, A.SIMON
ISGE, TEAM, 2I, M2D, LCC, CIRIMAT, FREESCALE, TARRAGONE, FREESCALE USA
Rapport de Contrat : Laboraoire commun LISPA, Octobre 2008, 40p. , N° 08526
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1152453D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET
J.B.SAUVEPLANE, P.TOUNSI, E.SCHEID, A.DERAM
ISGE, M2D, FREESCALE
Manifestation avec acte : 19th European Symposium Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2008), Maastricht (Pays Bas), 29 Septembre - 2 Octobre 2008, 10p. , N° 08559
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Abstract
This paper presents a methodology and tool based on 3D electro-thermal finite elements modeling intended to analyze the sequence of the events after emergence of defects in automotive power MOSFETs. Finite element modeling of power device and its nearby environment is detailed. The effects of delamination and bonding wire lift off on device transient electro-thermal behavior are investigated during a short circuit mode. Thus it helps to quantify the electro-thermal impact of the damages. Such modeling is useful for optimization of structure design to guarantee a longer lifespan.
Mots-Clés / Keywords
Power electronics; MOSFET; finite element modelling; Electro-thermal coupling; Device reliability;
Hermetic wafer level bonding of an absolute piezo-resistive pressure sensor for aerospace applications
J.F.LE NEAL, S.BRIDA, P.PONS, D.BOURRIER, E.SCHEID, P.TEMPLE BOYER, D.LELLOUCHI, M.VAYSSIERES
AUXITROL, TEAM, M2D, NOVAMEMS
Manifestation avec acte : 34th Micro and Nano Engineering Conference (MNE 2008), Athènes (France), 15-18 Septembre 2008, 1p. , N° 08765
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