183documents trouvés
MOSFET with a boron-loaded gate as a low-energy neutron dosimeter
M.GAVELLE, G.SARRABAYROUSE, E.SCHEID, S.SISKOS, M.FRAGOPOULOU, M.ZAMANI
M2D, Thessaloniki
Revue Scientifique : Radiation Physics and Chemistry, Vol.80, N°2, pp.1437-1440, Décembre 2011 , N° 11566
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125599Nano-crystallized tetragonal metastable ZrO2 thin films deposited by MOCVD for 3D capacitors
M.BRUNET, H.MAHFOZ-KOTB, L.BOUSCAYROL, E.SCHEID, M.ANDRIEUX, C.LEGROS, S.SCHAMM
ISGE, Assiut University, TEAM, M2D, LEMHE-CNRS, CEMES/CNRS
Revue Scientifique : Thin Solid Films, Vol.519, N°16, pp.5638-5644, Juin 2011 , N° 10555
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124709Controlling precursor stability and evaporation through molecular design. Pseudo single source precursor approach to MOCVD SrTiO3 thin films
G.A.SEISENBAEVA, S.GOHIL, V.G.KESSLER, M.ANDRIEUX, C.LEGROS, P.RIBOT, M.BRUNET, E.SCHEID
Uppsala, LEMHE-CNRS, ISGE, M2D
Revue Scientifique : Applied Surface Science, Vol.257, N°6, pp.2281-2290, Janvier 2011 , N° 10641
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123464Properties of silicon thin films obtained by low-pressure chemical vapour deposition
P.TEMPLE BOYER, B.ROUSSET, E.SCHEID
TEAM, M2D
Revue Scientifique : Thin Solid Films, Vol.518, N°23, pp.6897-6903, Septembre 2010 , N° 09686
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122318Physico-chemical properties of SiOxNy thin films
R.MAHAMDI, L.SACI, F.MANSOUR, C.MOLLIET, P.TEMPLE BOYER, E.SCHEID
Constantine, M2D
Revue Scientifique : International Journal of Nano and Biomaterials, Vol.2, pp.347-353, Décembre 2009 , N° 08780
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Plus d'informations
Mots-Clés / Keywords
Silicon oxynitride; FTIR; Bonds;
ZrO2 Thin Films Grown On 2D and 3D Silicon Surfaces By DLI-MOCVD For Electronic Devices
K.GALICKA-FAU, M.ANDRIEUX, C.LEGROS, I.GALLET, M.BRUNET, E.SCHEID, S.SCHAMM
LEMHE-CNRS, ISGE, M2D, CEMES/CNRS
Manifestation avec acte : EuroCVD-17, Vienne (Autriche), 4-9 Octobre 2009, 8p. , N° 09611
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123461Characterization of ZrO2 thin films deposited by MOCVD for high-density 3D capacitors
M.BRUNET, E.SCHEID, K.GALICKA-FAU, M.ANDRIEUX, C.LEGROS, I.GALLET, M.HERBST, S.SCHAMM
ISGE, M2D, LEMHE-CNRS, CEMES/CNRS
Revue Scientifique : Microelectronic Engineering, Vol.86, N°10, pp.2034-2037, Octobre 2009 , N° 08631
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Abstract
This work deals with high-density integrated capacitors for output filters in future micro DCDC converters. To reach high capacitance density, 3D structures were created in silicon with DRIE followed by MOCVD of ZrO2 (100 nm thick). The step coverage revealed two deposition regimes: a surface reaction controlled regime for cavities aspect ratio lower than 2 and a diffusion-controlled regime for higher aspect ratios. The ZrO2 films present mostly a cubic/tetragonal structure. The permittivity extracted from the measurement is 26.4. These results are discussed with static dielectric responses calculated in literature.
Mots-Clés / Keywords
ZrO2; MOCVD; High-k; Thin films; Step coverage; 3D stuctures; MIS capacitor;
Parasitic phenomena in electrostatic actuators based on sealed cavity fabricated with wafer-bonding technology
C.MAJ, M.OLSZACKI, M.AL BAHRI, E.SCHEID, A.NAPIERALSKI
M2D, Lodz
Manifestation avec acte : XXIII Eurosensors (EUROSENSORS 2009), Lausane (Suisse), 6-9 Septembre 2009, 4p. , N° 09613
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119654Parasitic phenomena in electrostatic actuators based on sealed cavity fabricated with wafer-bonding technology
C.MAJ, M.OLSZACKI, M.AL BAHRI, E.SCHEID, A.NAPIERALSKI
M2D, Lodz
Revue Scientifique : Procedia Chemistry, Vol.1, N°1, pp.429-432, Septembre 2009 , N° 09613
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126505On the accurate determination of micro-scale material's thermomechanical properties. Application to AlSi1% chip metallization from a power semiconductor device
J.B.SAUVEPLANE, E.SCHEID, A.DERAM
ISGE, M2D, FREESCALE
Revue Scientifique : Microelectronics Reliability, Vol.49, N°5, pp.499-505, Mai 2009 , N° 08614
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Abstract
This paper presents a method and an experimental technique supporting the accurate measurement of the thermomechanical parameters (coefficient of thermal expansion (CTE), Young's modulus, yield stress and internal stress) of a thin metallic film used in microelectronic chip fabrication. First the theoretical background of the method is presented along with the process of fabrication of bilayer microcantilevers. Then the experimental setup of measurement and the measurement results obtained on a thin aluminum layer are given and discussed. The accuracy of the method is demonstrated and enables us to observe mechanical property variations over a temperature range of 80 °C as well as metal hardening phenomena.
Mots-Clés / Keywords
Thermomechanical properties; Young's modulus; Coefficient of thermal expansion; Yield stress; Residual stress; Cantilever curvature; AlSi1% metallization;