125documents trouvés
Design of microsystems devoted to the determination of young s mudulus and coefficient of thermal expansion of material
O.PERAT, J.M.DORKEL, E.SCHEID, P.TEMPLE BOYER, P.TOUNSI, Y.CHUNG, M.ZECRI, A.PEYRE LAVIGNE
CIP, TMN, MOTOROLA USA, MOTOROLA TOULOUSE
Manifestations avec acte à diffusion limitée : 9th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES'2002), Wroclaw (Pologne), 20-22 Juin 2002, 4p. , N° 02370
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53656Two-port network theory based thermal characterization of power module packages
F.E.RATOLOJANAHARY, J.M.DORKEL, P.TOUNSI
Madagascar, CIP
Revue Scientifique : The European Physical Journal. Applied Physics, Vol.18, N°1, pp.63-75, 2002 , N° 01016
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51412Analysis and compact modeling of a vertical grounded-base NPN bipolar transistor used as an ESD protection in a smart power technology
G.BERTRAND, C.DELAGE, M.BAFLEUR, N.NOLHIER, J.M.DORKEL, Q.NGUYEN, N.MAURAN, D.TREMOUILLES, P.PERDU
CIP, ON Semiconductor, CNES-THALES, 2I
Revue Scientifique : IEEE Journal of Solid-State Circuits, Vol.36, N°9, pp.1373-1381, Septembre 2001 , N° 00036
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47284Analysis and compact modeling of a vertical grounded-base NPN bipolar transistor used as ESD protection in a smart power technology
G.BERTRAND, C.DELAGE, M.BAFLEUR, N.NOLHIER, J.M.DORKEL, Q.NGUYEN, N.MAURAN, D.TREMOUILLES, P.PERDU
ON Semiconductor, ISGE, 2I, CNES-THALES
Revue Scientifique : IEEE Journal of Solid-State Circuits, Vol.36, N°9, pp.1373-1381, Septembre 2001 , N° 01667
Lien : http://hal.archives-ouvertes.fr/hal-00143927
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Abstract
A thorough analysis of the physical mechanisms involved in a Vertical Grounded-Base NPN bipolar transistor (VGBNPN) under ElectroStatic Discharge (ESD) stress is first carried out by using 2D-device simulation, Transmission Line Pulse measurement (TLP) and photoemission experiments. This analysis is used to account for the unexpected low value of the VGBNPN snapback holding voltage under TLP stress. A compact model based on a new avalanche formulation resulting from the exact resolution of the ionization integral is therefore proposed
Mots-Clés / Keywords
Bipolar; compact modeling ; ESD; Smart-power; 2D; Simulation;
Pour une automobile plus sure et plus fiable. Fiabilité prédictive des assemblages mécatroniques. Diagnostic automobile
J.M.DORKEL, A.ESTEVE, A.MARTY, O.PERAT, E.SCHEID, P.TOUNSI, J.P.FRADIN, X.CHAUFFLEUR, M.ZECRI, A.FEYBESSE, I.DERAM, P.DUPUY, A.PEYRE LAVIGNE, L.TRAVE-MASSUYES, X.OLIVE, D.ESTEVE, H.POULARD
CIP, MIS, TMN, EPSILON, MOTOROLA TOULOUSE, DISCO, ACTIA
Rapport de Contrat : Contrat Région Midi-Pyrénées N° DAER-Recherche/99008749, Septembre 2001, 60p. , N° 01411
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47581Design of microsystems devoted to the determination of young's modulus and coefficient of thermal expansion of material
O.PERAT, J.M.DORKEL, E.SCHEID, P.TEMPLE BOYER, P.TOUNSI, Y.CHUNG, M.ZECRI, A.PEYRE LAVIGNE
CIP, TMN, MOTOROLA USA, MOTOROLA TOULOUSE
Manifestations avec acte à diffusion limitée : 8th International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES'2001), Zakopane (Pologne), 21-23 Juin 2001, pp.427-430 , N° 01015
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45896Pour une automobile plus sure et plus fiable. Fiabilité prédictive des assemblages mécatroniques. Diagnostic automobile
J.M.DORKEL, A.MARTY, O.PERAT, E.SCHEID, P.TOUNSI, J.P.FRADIN, X.CHAUFFLEUR, M.ZECRI, A.FEYBESSE, I.DERAM, A.PEYRE LAVIGNE
CIP, MIS, TMN, EPSILON, MOTOROLA TOULOUSE
Rapport de Contrat : Contrat Région Midi-Pyrénées N° DAER-Recherche/99008749, Janvier 2001, 12p. , N° 01008
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43216Analysis and compact modeling of a vertical grounded base NPN bipolar transistor used as an ESD protection in a smart power technology
G.BERTRAND, C.DELAGE, M.BAFLEUR, N.NOLHIER, J.M.DORKEL, Q.NGUYEN, N.MAURAN, P.PERDU
CIP, ON, CNES, 2I
Manifestation avec acte : 2000 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM'2000), Minneapolis (USA), 24-26 Septembre 2000, pp.28-31 , N° 00136
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40735Thermal characterization: a key element for accelerating stress testing
J.M.BOSC, P.DUPUY, J.GIL, J.M.DORKEL, G.SARRABAYROUSE
MOTOROLA TOULOUSE, LCIP, TMN
Revue Scientifique : Microelectronics Journal, Vol.31, N°9-10, pp.747-752, Septembre-Octobre 2000 , N° 99391
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41568Advanced power copper technology for SMARTMOS TM application designs
I.PAGES, R.BAIRD, J.WANG, T.SICARD, J.M.DORKEL, P.DUPUY, P.LANCE, E.HUYNH, Y.CHUNG
MOTOROLA TOULOUSE, MOTOROLA USA, LCIP, CIP
Manifestation avec acte : 12th International Symposium on Power Semiconductor Devices & ICs (ISPSD'2000), Toulouse (France), 22-25 Mai 2000, pp.141-144 , N° 00633
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