133documents trouvés
Temperature dependence of ESD charging in RF MEMS capacitive switch
J.RUAN, G.J.PAPAIOANNOU, N.NOLHIER, D.TREMOUILLES, F.COCCETTI, R.PLANA
MINC, Athenes, ISGE, 2I
Manifestation avec acte : 39th European Microwave Conference : European Microwave week 2009 (EuMA: EuMC), Rome (Italie), 28 Septembre-2 octobre 2009 , N° 09584
Diffusable
119148Accelerated lifetime test of FR-MEMS switches under ESD stress
J.RUAN, N.NOLHIER, G.J.PAPAIOANNOU, D.TREMOUILLES, V.PUYAL, C.VILLENEUVE, T.IDDA, F.COCCETTI, R.PLANA
MINC, ISGE, Athenes, 2I
Revue Scientifique : Microelectronics Reliability, Vol.49, N°9-11, pp.1256-1259, Septembre 2009 , N° 09582
Diffusable
119144ESD events in SiN RF-MEMS Capacitive Switches
J.RUAN, N.NOLHIER, D.TREMOUILLES, G.J.PAPAIOANNOU, R.PLANA
MINC, ISGE, Athenes
Manifestation avec acte : Anaheim (Etats-Unis), 30 Août - 4 septembre 2009, 6p. , N° 09581
Diffusable
119393Accurate transcient behaviour measurement of high-voltage ESD protections based on a very fast transmission-line pulse system
A.DELMAS, D.TREMOUILLES, N.NOLHIER, M.BAFLEUR, N.MAURAN, A.GENDRON
ISGE, 2I
Manifestation avec acte : 31st Annual Electrical Overstress/Electrostratic Discharge Symposium (EOS/ESD), Anaheim (USA), 30 Août - 4 septembre 2009 , N° 09077
Diffusable
118954La fiabilité d'un MEMS-RF capacitif en bande W soumis à des décharges électrostatiques
J.RUAN, N.NOLHIER, G.J.PAPAIOANNOU, D.TREMOUILLES, F.COCCETTI, R.PLANA
MINC, ISGE, Athenes, 2I
Manifestation avec acte : 16èmes Journées Nationales Microondes (JNM 2009), Grenoble (France), 27-29 Mai 2009, 4p. , N° 09246
Diffusable
117675ESD stress in RF-MEMS capacitive switches: the influence of dielectric material deposition method
J.RUAN, G.J.PAPAIOANNOU, N.NOLHIER, M.BAFLEUR, F.COCCETTI, R.PLANA
MINC, Athenes, ISGE, 2I
Manifestation avec acte : International Reliability Physics Symposium (IRPS 2009), Montréal (Canada), 26-30 Avril 2009, 5p. , N° 09244
Lien : http://hal.archives-ouvertes.fr/hal-00445676/fr/
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Mots-Clés / Keywords
ESD; Charging; Dielectric material; Reliability; RF MEMS;
ESD failure signature in capacitive RF MEMS switches
J.RUAN, G.J.PAPAIOANNOU, N.NOLHIER, N.MAURAN, M.BAFLEUR, F.COCCETTI, R.PLANA
MINC, Athenes, ISGE, 2I
Revue Scientifique : Microelectronics Reliability, Vol.48, N°8-9, pp.1237-1240, Novembre 2008 , N° 08457
Diffusable
Plus d'informations
Abstract
RF MEMS are commonly known as electrostatic devices using high electric field for their actuation. They can be exposed to transient voltages in any environment, and are very sensitive. According to this point of view, it is necessary to understand and analyze the degradations and failure criteria that can make them useless or reduce their lifetime. This paper deals with the investigation of ESD failure signature in capacitive RF MEMS. ESD experiments were carried out using a transmission line pulsing technique. It has been observed that electrical discharges give rise to sparks or electrical arcing and induced DC parameter shift, which can directly lead to changes in RF metrics. The contact-less dielectric charging effects of ESD pulses have been reported in this paper. It has been found that induced charges are predominant compared to injected ones through the trend of slope of the shift in the voltage corresponding to the minimum of capacitance.
ESD protection device and method of forming an ESD protection device
P.RENAUD, P.BESSE, A.GENDRON, N.NOLHIER
FREESCALE, ISGE
Brevet : FREESCALE SEMICONDUCTOR, INC/CNRS. Numéro de publication internationale: WO2008135812 (A1), Novembre 2008, 23p. , N° 08814
Lien : http://ep.espacenet.com/numberSearch?locale=fr_ep
Diffusable
117596Rapport final du laboratoire commun LISPA
P.ALOISI, C.ALONSO, M.BAFLEUR, V.BOITIER, F.CAIGNET, P.DUBREUIL, B.ESTIBALS, E.IMBERNON, K.ISOIRD, H.E.DKOTB MAHFOZ, N.MAURAN, F.MORANCHO, N.NOLHIER, J.ROIG GUITART, B.ROUSSET, C.SALAMERO, J.L.SANCHEZ, E.SCHEID, H.TRANDUC, B.CHAUDRET, M.KHAN, A.MAISONNAT, C.ESTOURNES, J.L.CHAPTAL, A.DERAM, R.ESCOFFIER, U.MONIRAT, P.RENAUD, J.M.REYNES, J.SHEPHERD, E.STEFANOV, B.VRIGNON, L.CALVENTE, L.MARTINEZ, E.VIDAL, P.ARTILLAN, B.BERNOUX, A.GENDRON, N.LACRAMPE, L.SAINT-MACARY, J.B.SAUVEPLANE, A.SIMON
ISGE, TEAM, 2I, M2D, LCC, CIRIMAT, FREESCALE, TARRAGONE, FREESCALE USA
Rapport de Contrat : Laboraoire commun LISPA, Octobre 2008, 40p. , N° 08526
Non diffusable
115245ESD failure signature in capacitive RF MEMS switches
J.RUAN, G.J.PAPAIOANNOU, N.NOLHIER, N.MAURAN, M.BAFLEUR, F.COCCETTI, R.PLANA
MINC, Athenes, ISGE, 2I
Manifestation avec acte : 19th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF), Maastricht (Pays Bas), 29 Septembre - 2 Octobre 2008 , N° 08457
Diffusable
Plus d'informations
Abstract
RF MEMS are commonly known as electrostatic devices using high electric field for their actuation. They can be exposed to transient voltages in any environment, and are very sensitive. According to this point of view, it is necessary to understand and analyze the degradations and failure criteria that can make them useless or reduce their lifetime. This paper deals with the investigation of ESD failure signature in capacitive RF MEMS. ESD experiments were carried out using a transmission line pulsing technique. It has been observed that electrical discharges give rise to sparks or electrical arcing and induced DC parameter shift, which can directly lead to changes in RF metrics. The contact-less dielectric charging effects of ESD pulses have been reported in this paper. It has been found that induced charges are predominant compared to injected ones through the trend of slope of the shift in the voltage corresponding to the minimum of capacitance.