Laboratoire d’Analyse et d’Architecture des Systèmes
K.ABOUDA, M.BAFLEUR, P.BESSE, F.CAIGNET, F.LAFON, J.P.LAINE, N.NOLHIER, N.MONNEREAU, S.RIGOUR, A.SALLES, D.TREMOUILLES, A.WANG
FREESCALE, ISGE, Valeo
Rapport de Contrat : Projet ANR-09-VTT-07-01, Septembre 2011, 8p. , N° 11479
Non diffusable
125281R.MONTHEARD, C.ESCRIBA, J.Y.FOURNIOLS, M.LASTAPIS, J.PRUNET, M.BAFLEUR, J.M.DILHAC
ISGE, N2IS, TAG Technologies
Manifestation avec acte : International Workshop on Structural Health Monitoring (IWSHM 2011), Stanford (USA), 13-15 Septembre 2011, pp.471-478 , N° 11152
Diffusable
125302M.DIATTA, D.TREMOUILLES, E.BOUYSSOU, M.BAFLEUR
ISGE, ST
Manifestation avec acte : Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD 2011), Anaheim (USA), 11-16 Septembre 2011, pp.4A.2-1-4A.2-9 , N° 11422
Diffusable
125579N.MONNEREAU, F.CAIGNET, N.NOLHIER, D.TREMOUILLES, M.BAFLEUR
ISGE
Manifestation avec acte : Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD 2011), Anaheim (USA), 11-16 Septembre 2011, pp.6A.2-1-6A.2-6 , N° 11058
Diffusable
Plus d'informations
Due to growing number of embedded electronics, estimating failure related to system-level electrostatic discharge (ESD) consideration has become a major concern. In this paper, a behavioral modeling methodology to predict ESD failures at system level is proposed and validated. The proposed models enable time-domain simulation to determine the voltage and current waveforms inside and outside an integrated circuit during ESD events and then to predict the susceptibility of an electronic system to ESD. The purpose of this methodology is based on the improvement of Input/output Buffer Information Specification files widely used in signal integrity simulation. A simple case study is proposed to investigate the susceptibility of latch devices to transient stresses. Simulations and measurements are compared. Analytical formulations to determine the probability of susceptibility failure are proposed and compared with measurements.
P.BESSE, F.LAFON, N.MONNEREAU, F.CAIGNET, J.P.LAINE, A.SALLES, S.RIGOUR, M.BAFLEUR, N.NOLHIER, D.TREMOUILLES
FREESCALE, Valeo, ISGE
Manifestation avec acte : Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD 2011), Anaheim (USA), 11-16 Septembre 2011, pp.5B.3-1-5B.3-9 , N° 11059
Diffusable
125587H.ARBESS, D.TREMOUILLES, M.BAFLEUR
ISGE
Manifestation avec acte : Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD 2011), Anaheim (USA), 11-16 Septembre 2011, pp.1B.2-1-1B.2-8 , N° 11087
Lien : http://hal.archives-ouvertes.fr/hal-00722642
Diffusable
Plus d'informations
We propose a new MOS-IGBT power clamp for high-temperature operation providing a very compact high-robustness ESD protection with low temperature sensitivity. It is achieved by inserting in the same LDMOS device P+ diffusions in the drain with various N+/P+ ratios whose impact on RON and holding current at high temperatures is thoroughly studied.
M.ZERARKA, P.AUSTIN, M.BAFLEUR
ISGE
Revue Scientifique : Microelectronics Reliability, Vol.51, N°9-11, pp.1990-1994, Septembre 2011 , N° 11556
Diffusable
125582C.VANHECKE, L.ASSOUERE, M.BAFLEUR, J.M.DILHAC
Thalès Alenia Space, ISGE
Rapport LAAS N°11018, Février 2011, 7p.
Diffusion restreinte
123884G.AURIOL, M.BAFLEUR, C.BARON, J.M.DILHAC, S.DI MERCURIO, C.ESCRIBA, A.GODLEWSKI, J.Y.FOURNIOLS, M.LASTAPIS, R.MONTHEARD, R.SAHORES
ISI, ISGE, INSAT, N2IS
Rapport de Contrat : Contrat Airbus PJOR D10014614, Février 2011, 36p. , N° 11012
Non diffusable
124178R.BRIAND, G.HAYE, S.BEAUSSART, C.PERSON, M.BAFLEUR, M.DIAZ, J.M.DILHAC, D.DRAGOMIRESCU, M.O.KILLIJIAN, P.D.BERGER, C.JANNETEAU, J.CAELEN, T.TARIS, C.MULLER, D.GAITI
ESTIA, FEMTO-ST, IEMN, Institut Telecom, ISGE, OLC, MINC, TSF, LETI, LIST, LSI, MIB, STAR, UT
Rapport LAAS N°10825, White Paper de l'Association Instituts Carnot, Janvier 2011, 45p.
Diffusable
123657