234documents trouvés
Deep trench NPN transistor for low-Ron ESD protection of high-voltage I/Os in advanced smart power technology
A.GENDRON, C.SALAMERO, N.NOLHIER, M.BAFLEUR, P.RENAUD, P.BESSE
FREESCALE, ISGE
Manifestation avec acte : 2006 Bipolar/BiCMOS Circuits and Technology Meeting (BCTM'2006), Maastricht (Pays-Bas), 8-10 Octobre 2006, pp.150-153 , N° 06210
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108244Area-efficient reduced and no-snapback PNP-based ESD protection in advanced smartpower technology
A.GENDRON, P.RENAUD, P.BESSE, C.SALAMERO, M.BAFLEUR, N.NOLHIER
ISGE, FREESCALE
Manifestation avec acte : 28th Electrical Overstress/Electrostatic Discharge Symposium, Tucson (USA), 10-14 Septembre 2006, pp.69-76 , N° 06087
Diffusable
108245TCAD methodology for ESD robustness prediction of smart power ESD devices
C.SALAMERO, N.NOLHIER, A.GENDRON, M.BAFLEUR, P.BESSE, M.ZECRI
FREESCALE, ISGE
Revue Scientifique : IEEE Transactions on Device and Materials Reliability, Vol.6, N°3, pp.399-407, Septembre 2006 , N° 06014
Lien : http://hal.archives-ouvertes.fr/hal-00195294/fr/
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Abstract
This paper presents a new method to predict the electrostatic-discharge (ESD) protection robustness of a device with technology-in-computer-aided-design (TCAD) simulations. Tested on different devices and two Smart Power technologies, the results are validated through electrical measurement and failure analysis. Failure current is always predicted with a good accuracy compared to technology spreading. In addition, the methodology provides a significant simulation time speedup compared to classical methods based on a temperature criterion
Mots-Clés / Keywords
Electrostatic discharge (ESD); Predictive simulation; Robustness; Smart power technology; TCAD simulation;
Potentialities of substrate-thinning technique to control minority carrier injection in smart power IC's
C.LOCHOT, J.P.LAINE, M.BAFLEUR, A.CAZARRE, J.TASSELLI
FREESCALE, LCIP2, CIP, ISGE, N2IS
Revue Scientifique : Microelectronics Journal, Vol.37, N°8, pp.804-811, Août 2006 , N° 05258
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109743Optimizing pulsed OBIC technique for ESD defect localization
F.ESSELY, N.GUITARD, F.DARRACQ, V.POUGET, M.BAFLEUR, P.PERDU, A.D.TOUBOUL, D.LEWIS
IXL, ISGE, CNES-THALES
Manifestation avec acte : 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA'2006), Singapour, 3-7 Juillet 2006, pp.270-275 , N° 06088
Lien : http://hal.archives-ouvertes.fr/hal-00382949/fr/
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Abstract
The evolution of laser sources has led to the advent of new laser-based techniques for failure analysis. The pulsed OBIC (optical beam induced current) technique is one of them, which is based on the photoelectric laser stimulation of the device under test (DUT) at a micrometric scale. The suitability of this technique to localize failure sites resulting from electrostatic discharges (ESD) has previously been demonstrated. This paper presents a complementary work on the OBIC experimental procedure for defect localization improving the sensitivity of this technique and thus the probability to localize very small size defects
Fiabilité composants et packaging
C.PELLET, Y.DANTO, M.BAFLEUR, J.Y.FOURNIOLS, J.M.DUMAS, S.NOEL, F.FOREST, L.TORRES, R.VELAZCO, L.BECHOU
ISGE, MIS, IXL, LIRMM, SUPELEC
Rapport de Contrat : RTP Fiabilité, Juillet 2006, 62p. , N° 06526
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107484Comparison of efficient solutions for the ESD protection of high-voltage I/Os in advanced smart power technology
A.GENDRON, C.SALAMERO, N.NOLHIER, M.BAFLEUR, P.RENAUD, P.BESSE
ISGE, FREESCALE
Manifestations avec acte à diffusion limitée : 3rd EOS/ESD/EMI Workshop, Toulouse (France), 18-19 Mai 2006, pp.19-22 , N° 06528
Diffusable
107487Overvoltage during FTLP compared to TLP on a single finger grounded gate nMOS transistor
P.GALY, V.BERLAND, M.BAFLEUR, N.NOLHIER
Microelectronics, LORE, ISGE
Manifestations avec acte à diffusion limitée : 3rd EOS/ESD/EMI Workshop, Toulouse (France), 18-19 Mai 2006, pp.83-87 , N° 06529
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107489OBIC technique for ESD defect localization: influence of the experimental procedure
F.ESSELY, N.GUITARD, F.DARRACQ, V.POUGET, M.BAFLEUR, A.TOUBOUL, D.LEWIS
IXL, ISGE
Manifestations avec acte à diffusion limitée : 3rd EOS/ESD/EMI Workshop, Toulouse (France), 18-19 Mai 2006, pp.79-81 , N° 06530
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107491Original methodology for integrated circuit ESD immunity combining VF-TLP and near field scan testing
N.LACRAMPE, A.BOYER, N.NOLHIER, F.CAIGNET, M.BAFLEUR
ISGE, LESIA-INSA
Manifestations avec acte à diffusion limitée : 3rd EOS/ESD/EMI Workshop, Toulouse (France), 18-19 Mai 2006, pp.51-54 , N° 06205
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