359documents trouvés
High-frequency noise in pseudomorphic double-heterojunction high electron mobility transistors
S.LONG, L.ESCOTTE, J.GRAFFEUIL, P.FELLON, D.GEIGER, D.PONS
CISHT, United
Revue Scientifique : Fluctuation and Noise Letters, Vol.2, N°1, pp.L13-L19, 2002 , N° 01540
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53540Resonant coupling irises for the design of new planar bandstop filters
A.TAKACS, H.AUBERT, P.PONS, T.PARRA, R.PLANA, J.GRAFFEUIL, H.BAUDRAND, J.L.CAZAUX
ENSEEIHT, TMN, CISHT, ALCATEL ESPACE
Manifestation avec acte : 32nd European Microwave Conference, Milan (Italie), 23-27 Septembre 2002, pp.661-664 , N° 02218
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100414New planar bandstop filters with resonant coupling irises for satellite communications systems
A.TAKACS, H.AUBERT, P.PONS, T.PARRA, R.PLANA, J.GRAFFEUIL, H.BAUDRAND, J.L.CAZAUX
LEN7, TMN, CISHT, ALCATEL ESPACE
Manifestations avec acte à diffusion limitée : International Workshop on Microwave Filters, Toulouse (France), 24-26 Juin 2002, 2p. , N° 02421
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100052A 14,5 GHz-0,35 um frequency divider for dual-modulus prescaler
E.TOURNIER, M.SIE, J.GRAFFEUIL
CISHT
Manifestation avec acte : 2002 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Seattle (USA), 2-4 Juin 2002, pp.227-230 , N° 01591
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52138Low noise, high linearity, wide bandwidth amplifier using a 0.4 um SiGe BiCMOS for WLAN applications
J.SADOWY, V.LE GOASCOZ, I.TELLIEZ, J.GRAFFEUIL, E.TOURNIER, L.ESCOTTE, R.PLANA
ST Microelectronics, CISHT
Manifestation avec acte : 2002 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Seattle (USA), 2-4 Juin 2002, pp.217-220 , N° 01565
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Abstract
In this paper, we present the design of an integrated low noise amplifier (LNA) for WLAN applications in the 6 GHz range using a low complexity Site BiCMOS technology. The Site HBTs used in the design feature a typical cut-off frequency Ft of 45 GHz and a typical maximum oscillation frequency Fmax of 60 GHz. The LNA exhibits a 17 dB power gain with a 1.4 GHz bandwidth and a noise figure lower than 2.5 dB. The 1 dB compression point is -18 dBm and the third order intercept point referred to the Input is -7 dBm. We have furthermore observed a good accuracy between simulations and measurements. Finally, we have defined a new figure of merit involving the noise measure and the DC power consumption that shows that our design features a performance at the state of the art.
Low frequency noise characterization and modeling of microwave bipolar devices: application to the design of low phase noise oscillator
L.BARY, M.REGIS, G.CIBIEL, J.RAYSSAC, A.RENNANE, O.LLOPIS, M.BORGARINO, R.PLANA, J.GRAFFEUIL
CISHT, SiGe Semiconductor, 2I, Modena
Manifestation avec acte : 2002 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), Seattle (USA), 2-4 Juin 2002, pp.359-362 , N° 01619
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52142High quality factor and high self-resonant frequency monolithic inductor for millimeter-wave Si-based IC's
D.DUBUC, E.TOURNIER, I.TELLIEZ, C.BOULANGER, T.PARRA, J.GRAFFEUIL
CISHT, ST Microelectronics, CNES
Manifestation avec acte : 2002 IEEE MTT-S International Microwave Symposium, Seattle (USA), 2-7 Juin 2002, pp.193-196 , N° 01539
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52144MEMS and MEMS technologies for wireless communications
D.DUBUC, K.GRENIER, L.RABBIA, A.TAKACS, M.SAADAOUI, P.PONS, P.CAUDRILLIER, O.PASCAL, H.AUBERT, H.BAUDRAND, J.TAO, P.COMBES, J.GRAFFEUIL, R.PLANA
CISHT, TMN, AD2M, ENSEEIHT, LEN7
Conférence invitée : Invited paper. 23rd International Conference on Microelectronics (MIEL 2002), Nis (Yougoslavie), 12-15 Mai 2002, pp.91-98 , N° 02230
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52258The correlation resistance for low-frequency noise compact modeling of Si/SiGe HBT's
M.BORGARINO, L.BARY, D.VESCOVI, R.MENOZZI, A.MONROY, M.LAURENS, R.PLANA, F.FANTINI, J.GRAFFEUIL
Modena, CISHT, Parme, ST Microelectronics
Revue Scientifique : IEEE Transactions on Electron Devices, Vol.49, N°5, pp.863-870, Mai 2002 , N° 02055
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100546MEMS devices for the future wireless applications
K.GRENIER, D.DUBUC, L.RABBIA, A.TAKACS, P.PONS, T.PARRA, P.CAUDRILLIER, H.AUBERT, J.GRAFFEUIL, O.PASCAL, P.COMBES, H.BAUDRAND, R.PLANA
CISHT, TMN, LEN7, AD2M
Manifestation avec acte : 4th IEEE International Caracas Conference on Devices, Circuits and Systems (ICCDCS'2002), Oranjestad (Aruba), 17-19 Avril 2002, pp.D031.1-D031.8 , N° 02231
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