359documents trouvés
Vers une optimisation fonctionnelle des dispositifs à grande bade interdite GaN: exploitation du bruit basse et haute fréquence, et corrélation avec d'autres techniques de caractérisation
J.G.TARTARIN, S.KARBOYAN, S.NSELE, T.NOUTSA DJOKO, L.ESCOTTE, J.GRAFFEUIL, D.CARISETTI, S.PIOTROWICZ, B.LAMBERT
MOST, THALES R&T, ALCATEL THALES III-V, UMS
Manifestation avec acte : Journées de la Matière Condensée ( JMC ) 2012 du 27 août au 31 août 2012, Montpellier (France), Décembre 2012, 1p. , N° 12672
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128713Procédé et système de génération d'un signal impulsionnel du type à bande ultra large
A.CATHELIN, S.THURIES, S.GODET, E.TOURNIER, J.GRAFFEUIL
ST Microelectronics, MOST
Brevet : FR 2936918 (A1) le 9 avril 2010 FR 2936918 (B1) le 22 octobre 2010 WO 2010040740 (A1) le 15 avril 2010, Avril 2010, 20p. , N° 08580
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126787Cyclostationary shot noise measurements in RF schottky barrier diode detectors
J.GRAFFEUIL, R.ALI LIMAN, J.L.MURARO, O.LLOPIS
Thalès Alenia Space, MOST
Revue Scientifique : IEEE Electron Devices Letters, Vol.31, N°1, pp.74-76, Janvier 2010 , N° 09684
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122021Noise in sampling phase detectors for RF PLL
R.ALI LIMAN, J.L.MURARO, P.LAUTIER, O.LLOPIS, J.GRAFFEUIL
MOST, Thalès Alenia Space
Manifestation avec acte : 39th European Microwave Conference : European Microwave week 2009 (EuMA: EuMC), Rome (Italie), 28 Septembre-2 octobre 2009, pp.480-483 , N° 09392
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119097Bruit dans les détecteurs de phase à échantillonage pour boucle à verrouillage de phase RF
R.ALI LIMAN, J.L.MURARO, P.LAUTIER, O.LLOPIS, J.GRAFFEUIL
MOST, Thalès Alenia Space
Manifestation avec acte : 16èmes Journées Nationales Microondes (JNM 2009), Grenoble (France), 27-29 Mai 2009, 4p. , N° 09305
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117907A 6-GHz low-power BiCMOS SiGe:C 0.25 um direct digital synthesizer
S.THURIES, E.TOURNIER, A.CATHELIN, S.GODET, J.GRAFFEUIL
MOST, ST Microelectronics
Revue Scientifique : IEEE Microwave and Wireless Components Letters, Vol.18, N°1, pp.46-48, Janvier 2008 , N° 06550
Lien : http://hal.archives-ouvertes.fr/hal-00257982/fr/
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Abstract
A 6-GHz low power SiGe direct digital synthesizer (DDS) is reported. This letter discusses the BiCMOS design improvements used for the phase accumulator and the phase-to-amplitude conversion in order to achieve higher speed operation and lower power consumption compared to existing DDS. The phase accumulator is based on a three-level BiCMOS logic, and the phase-to-amplitude conversion is completed through a bipolar differential pair. The circuit has been processed in a BiCMOS SiGe:C 0.25 $mu$m technology. The power consumption is 308 mW and it operates from a 2.8 V supply. The chip core area is 1 mm$^2$.
Mots-Clés / Keywords
BiCMOS; SiGe; Direct digital synthesizer; Synthesizer;
Assessing zener diodes structures reliability from their low frequency noise
J.GRAFFEUIL, L.BARY, J.RAYSSAC, J.G.TARTARIN, L. LOPEZ
2I, CNES, MOST
Revue Scientifique : IEEE Transactions on Device and Materials Reliability, Vol.7, N°3, pp.468-472, Novembre 2007 , N° 07381
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Abstract
An electrical stress test has been conducted on 98 Zener conventional reference diodes structures and it has been observed that 45 % of these devices failed after 3000 hours. However this high failure ratio can be reduced to below 25 %, or less, providing that an appropriate low frequency noise (LFN) characterization is initially performed and that all the devices exhibiting the larger LFN are subtracted from the lot subjected to electrical stress test. Further results obtained after a 4500 hours electrical stress test conducted on a reduced number of diodes fully validate this finding.
Mots-Clés / Keywords
Reliability testing; Low frequency noise measurement; Zener diode;
A 3-bits DDS oriented low power consumption 15 GHz phase accumulator in a 0.25 um BiCMOS SiGe:C technology
S.THURIES, E.TOURNIER, J.GRAFFEUIL
MOST
Manifestation avec acte : 13th IEEE International Conference on Electronics, Circuits and Systems (ICECS'2006), Nice (France), 10-13 Décembre 2006, 4p. , N° 06551
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109013Robust gan electronics for highly reliable BF and RF analog systems in aerospace applications
G.SOUBERCAZE PUN, J.G.TARTARIN, L.BARY, J.RAYSSAC, S.DELAGE, J.GRAFFEUIL
MOST, 2I, TRT, TIGER
Manifestation avec acte : CANEUS 2006, Toulouse (France), 27 Août - 1er Septembre 2006, 7p. , N° 06474
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107581Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design
G.SOUBERCAZE PUN, J.G.TARTARIN, L.BARY, J.RAYSSAC, E.MORVAN, B.GRIMBERT, S.L.DELAGE, J.C.DE JAEGER, J.GRAFFEUIL
2I, ALCATEL THALES III-V, IEMN Villeneuve, THOMSON CSF-LCR, MOST
Rapport LAAS N°06139, Mars 2006, 4p.
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Abstract
Although GaN technologies were initially developed for solid state source amplifiers, it was recently demonstrated that AlGaN/GaN HEMT transistors were also suitable for low noise applications such as LNA. The frequency synthesis is not yet widely explored for these technologies. In this paper the design of a low phase noise X-Band oscillator is proposed. The low frequency noise performance and the residual phase noise, as well as dynamic S-parameters were carried out on AlGaN/GaN HEMT grown on SiC. A large-signal modeling technique is also presented. The reduced complexity and the good accuracy of our large signal model permits an efficient circuit design, without intensive knowledge of the technological device parameters. These characterization and modeling tools are used for the design of an 1-stage oscillator working at 10 GHz delivering 20dBm.