150documents trouvés
Long-term reliability of silicon bipolar transistors subjected to low constraints
A.CROSSON, L.ESCOTTE, M.BAFLEUR, D.TALBOURDET, L.CRETINON, P.PERDU, G.PEREZ
MOST, ISGE, EDF, CNES-THALES, CNES
Manifestation avec acte : 18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon (France), 8-12 Octobre 2007, pp.1590-1594 , N° 07209
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Abstract
We present in this study the effect of electrical ageing on silicon (Si) NPN bipolar transistors. This study is based on a sample of halfhundred components, which have been fabricated in the early 1980s, which represents an exceptional experience feedback. By means of static and low frequency noise measurements, which are used as diagnostic tools for reliability assessment, we have noticed a good accordance with a physical model based on an oxide charge modulation. We have also used emission microscopy and electron beam-induced current analysis in order to visualize and to localize the defects in the structure. These have been located in the spacer oxide at the periphery of the base-emitter junction.
Recent evolutions in low phase noise microwave sources and related problems of noise modeling
O.LLOPIS, S.GRIBALDO, C.CHAMBON, B.ONILLON, J.G.TARTARIN, L.ESCOTTE
MOST
Conférence invitée : 19th International Conference on Noise and Fluctuations (ICNF2007), Tokyo (Japon), 9-14 Septembre 2007, pp.353-358 , N° 07545
Lien : http://hal.archives-ouvertes.fr/hal-00177027/fr/
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Abstract
The evolution of spectrally pure microwave sources is described, together with the problem of modeling the spectral shape of these signals. The noise sources interaction with the intrinsic nonlinear behavior of the oscillator is pointed out, and various solutions are proposed. Original techniques are shown to investigate on the phase noise modeling directly at the transistor level. Then, the problem of noise in some new approaches for frequency generation, in which other noise sources than the transistor noise contributes to the oscillator noise, is described.
Mots-Clés / Keywords
frequency generation; Phase noise; nonlinear noise; Microwave oscillator;
Noise-parameter measurements of SiGe HBTs under nonlinear conditions
C.CHAMBON, L.ESCOTTE
MOST
Manifestation avec acte : 19th International Conference on Noise and Fluctuations (ICNF2007), Tokyo (Japon), 9-14 Septembre 2007, pp.87-90 , N° 07521
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This paper deals with the measurements of "hot" noise-parameters applied to SiGe HBTs. Bias conditions and different sizes of transistors are taken into account. Afterwards, the main objective is to realize an amplifier with low-additive-noise in nonlinear regime, and then to design low-phase noise amplifiers
Mots-Clés / Keywords
Noise parameter measurement; Nonlinear devices; SiGe HBTs;
Trapped charges detection after CDM stress using a sensitive failure analysis low frequency noise measurement technique
Y.GAO, N.GUITARD, M.BAFLEUR, L.BARY, L.ESCOTTE, P.GUEULLE, L.LESCOUZERES
ISGE, 2I, MOST, ON Semiconductor
Manifestation avec acte : 1st Annual International Electrostatic Discharge Workshop, Lake Tahoe (USA), 14-17 Mai 2007, 2p. , N° 06771
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110762C-band noise-parameter measurement of microwave amplifiers under nonlinear conditions
C.CHAMBON, L.ESCOTTE, S.GRIBALDO, O.LLOPIS
MOST
Revue Scientifique : IEEE Transactions on Microwave Theory and Techniques , Vol.55, N°4, pp.795-800, Avril 2007 , N° 07051
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Abstract
A noise parameter measurement setup dedicated to microwave devices operating under large-signal conditions is presented in this paper. The method is based on the multiple impedance technique and the test set has been modified to include a pump generator. Appropriate low-pass filters are also present in order to avoid the saturation of the different measurement apparatus. The results obtained on two different amplifiers show a good accordance with experimental data extracted from residual phase noise measurements. This test set can thus be used to design low phase noise amplifiers
Mots-Clés / Keywords
Noise parameter measurement; microwave amplifiers; Nonlinear devices; Phase noise measurement ;
Mesures des paramètres de bruit appliquées à des MESFETs Triquint entre 2 et 15 GHz
C.CHAMBON, L.ESCOTTE
MOST
Rapport LAAS N°07122, Mars 2007, 25p.
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109511Caractérisation électrique et en bruit basse fréquence de la filière SCMOS3E de MHS SAS aux températures cryogéniques
J.JUYON, L.BARY, L.ESCOTTE
MOST, 2I
Rapport LAAS N°07005, Janvier 2007, 30p.
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109087Nonlinear analysis of noise in microwave amplifiers: theory and experiments
L.ESCOTTE, C.CHAMBON, E.GONNEAU
LTHR, MOST
Conférence invitée : Invited paper. 6th Mediterranean Microwave Symposium (MMS'2006), Gênes (Italie), 19-21 Septembre 2006, 4p. , N° 06494
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108742Behavioral modeling of microwave amplifiers including large-signal and noise interaction
C.CHAMBON, L.ESCOTTE, E.GONNEAU
MOST, LTHR
Manifestation avec acte : 36th European Microwave Conference (EuMC'2006), Manchester (GB), 10-15 Septembre 2006, 4p. , N° 06495
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107971Noise behavior of microwave amplifiers operating under nonlinear conditions
L.ESCOTTE, E.GONNEAU, C.CHAMBON, J.GRAFFEUIL
CISHT, LTHR
Revue Scientifique : IEEE Transactions on Microwave Theory and Techniques, Vol.53, N°12, pp.3704-3711, Décembre 2005 , N° 05042
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