150documents trouvés
Caractérisation d'une charge froide active réalisée à partir d'un TBH SiGe pour la calibration d'un radiomètre
E.LEYNIA DE LA JARRIGE, L.ESCOTTE, E.GONNEAU, J.M.GOUTOULE
MOST, LERISM, ASTRIUM
Manifestation avec acte : Journées Nationales Microondes (JNM 2011), Brest (France), 18-20 Mai 2011, 4p. , N° 11039
Diffusable
124638Stability analysis of an SiGe HBT-based active cold load
E.LEYNIA DE LA JARRIGE, L.ESCOTTE, E.GONNEAU, J.M.GOUTOULE
LERISM, ASTRIUM, MOST
Revue Scientifique : IEEE Transactions on Microwave Theory and Techniques, Vol.59, N°2, pp.354-359, Février 2011 , N° 10457
Diffusable
124677Characterization of an active cold load based on a SiGe HBT for radiometer calibration
E.LEYNIA DE LA JARRIGE, L.ESCOTTE, J.M.GOUTOULE, E.GONNEAU, J.RAYSSAC
MOST, ASTRIUM, LERISM, 2I
Manifestation avec acte : Microwave Technology and Techniques Workshop 2010, Noordwijk (Pays Bas), 10-12 Mai 2010, 10p. , N° 10287
Diffusable
12143323-8GHz and 36.5GHz active cold loads for radiometer calibration
C.BREDIN, D.SANSON, N.MOHAMED, J.C.ORLHAC, J.M.GOUTOULE, L.ESCOTTE, P.PIIRONEN
ASTRIUM, MOST, ESA/ESTEC
Manifestation avec acte : Microwave Technology and Techniques . Workshop 2010, Noordwijk (Pays Bas), 10-12 Mai 2010, 5p. , N° 10281
Diffusable
121320SiGe HBT-based Active Cold Load for radiometer Calibration
E.LEYNIA DE LA JARRIGE, L.ESCOTTE, J.M.GOUTOULE, E.GONNEAU, J.RAYSSAC
MOST, ASTRIUM, LTHR, 2I
Revue Scientifique : IEEE Microwave and Wireless Components Letters, Vol.20, N°4, pp.238-240, Avril 2010 , N° 10013
Diffusable
121813Active cold loads for radiometer calibration
C.BREDIN, N.MOHAMED, J.C.ORLHAC, J.M.GOUTOULE, L.ESCOTTE, P.PIIRONEN
MOST, ESA/ESTEC, ASTRIUM
Manifestation avec acte : ESA Workshop on Millimetrewave Technology & Applications, Noordwijk (Pays Bas), 18-20 Mai 2009, 8p. , N° 09205
Diffusable
117667Active cold load circuit preliminary design
L.ESCOTTE, F.LEROY
MOST
Rapport de Contrat : Active calibration for radiometers. Contract n° 21313/08/NL/GLC, Décembre 2008, 58p. , N° 08666
Non diffusable
115896Identification of the physical signature of CDM induced latent defects into a DC-DC converter using low frequency noise measurement
Y.GAO, N.GUITARD, C.SALAMERO, M.BAFLEUR, L.ESCOTTE, P.GUEULLE, L.LESCOUZERES
ISGE, MOST, ON Semiconductor
Revue Scientifique : Microelectronics Reliability, Vol.47, N°9-11, pp.1456-1460, Décembre 2007 , N° 07166
Lien : http://hal.archives-ouvertes.fr/hal-00385697/fr/
Diffusable
Plus d'informations
Abstract
In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a complex circuit such as a DCDC converter. This technique is able to detect the presence of a defect whereas classical electrical testing techniques such as Iddq or functionality test fail. In addition, a correlation between the noise signature and the nature of the defect is established. In particular, the presence of trapped charges in the oxides is clearly identified.
Long-term reliability of silicon bipolar transistors subjected to low constraints
A.CROSSON, L.ESCOTTE, M.BAFLEUR, D.TALBOURDET, L.CRETINON, P.PERDU, G.PEREZ
MOST, ISGE, EDF, CNES-THALES, CNES
Revue Scientifique : Microelectronics Reliability, Vol.47, N°9-11, pp.1590-1594, Décembre 2007 , N° 07209
Diffusable
Plus d'informations
Abstract
We present in this study the effect of electrical ageing on silicon (Si) NPN bipolar transistors. This study is based on a sample of halfhundred components, which have been fabricated in the early 1980s, which represents an exceptional experience feedback. By means of static and low frequency noise measurements, which are used as diagnostic tools for reliability assessment, we have noticed a good accordance with a physical model based on an oxide charge modulation. We have also used emission microscopy and electron beam-induced current analysis in order to visualize and to localize the defects in the structure. These have been located in the spacer oxide at the periphery of the base-emitter junction.
Identification of the physical signature of CDM induced latent defects into a DC-DC converter using low frequency noise measurement
Y.GAO, N.GUITARD, C.SALAMERO, M.BAFLEUR, L.ESCOTTE, P.GUEULLE, L.LESCOUZERES
ISGE, MOST, ON Semiconductor
Manifestation avec acte : 18th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon (France), 8-12 Octobre 2007, pp.1456-1461 , N° 07166
Lien : http://hal.archives-ouvertes.fr/hal-00385697/fr/
Diffusable
Plus d'informations
Abstract
In this paper, it is demonstrated that low frequency noise measurements are an efficient tool for the detection of latent defects induced by CDM stress in a complex circuit such as a DCDC converter. This technique is able to detect the presence of a defect whereas classical electrical testing techniques such as Iddq or functionality test fail. In addition, a correlation between the noise signature and the nature of the defect is established. In particular, the presence of trapped charges in the oxides is clearly identified.