127documents trouvés
Thermal effects modeling of multi-fingereg MOSFETs based on new specific test structures
S.HNIKI, G.BERTRAND, S.ORTOLLAND, M.MINONDO, B.RAUBER, C.RAYNAUD, A.GIRY, O.BON, H.JAOUEN, F.MORANCHO
ISGE, ST Microelectronics, CEA
Rapport LAAS N°09460, Juillet 2009, 4p.
Diffusable
118522Analysis and Optimization of LUDMOS Transistors on a 0.18um SOI CMOS Technology
G.TOULON, I.CORTES, F.MORANCHO
ISGE
Manifestation avec acte : 16th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES 2009), Lodz (Pologne), 25-27 Juin 2009 , N° 09372
Diffusable
118194New self heating structures for thermal coupling modeling on multi-fingered SOI power devices
S.HNIKI, G.BERTRAND, F.MORANCHO, S.ORTOLLAND, M.MINONDO, B.RAUBER, C.RAYNAUD, A.GIRY, O.BON, H.JAOUEN
ISGE, ON Semiconductor, ST Microelectronics, EXT, CEA
Manifestation avec acte : 21st International Symposium on Power Semiconductor devices and ICs (ISPD'09), Barcelone (Espagne), 14-17 Juin 2009 , N° 09374
Diffusable
118198A new junction termination technique: the Deep Trench Termination (DT2)
L.THEOLIER, H.MAHFOZ-KOTB, K.ISOIRD, F.MORANCHO
ISGE, Assiut University
Manifestation avec acte : 21st International Symposium on Power Semiconductor devices and ICs (ISPD'09), Barcelone (Espagne), 14-17 Juin 2009 , N° 09373
Diffusable
118196A new junction termination using a deep trench filled with BenzoCycloButene
L.THEOLIER, H.MAHFOZ-KOTB, K.ISOIRD, F.MORANCHO, S.ASSIE-SOULEILLE, N.MAURAN
Tours, Assiut University, ISGE, 2I
Revue Scientifique : IEEE Electron Device Letters, Vol.30, N°6, pp.687-689, Juin 2009 , N° 09505
Diffusable
Plus d'informations
Abstract
A new junction termination for high-voltage devices using a deep trench filled with dielectric, which dramatically decreases the junction-termination area, is proposed and fabricated. The termination breakdown voltage dependence on the dielectric critical electric field (E Cd) and its permittivity (epsivrd) is theoretically studied. Finally, the proposed junction termination is experimentally validated using BenzoCycloButene (BCB) as dielectric material. Experimental results show that the proposed termination sustains more than 1200 V with a 70-mum-width and 100- mum-depth trench filled by BCB.
Static and dynamic analysis of split-gate RESURF stepped oxide (RSO) MOSFETs for 35V applications
C.F.TONG, I.CORTES, P.A.MAWBY, J.A.COVINGTON, F.MORANCHO
ISGE, University of Warwic
Manifestation avec acte : 7th Spanish Conference on Electron Devices (CDE 09), Santiago de Compostela (Espagne), 11-13 Février 2009, pp.71-72 , N° 08697
Diffusable
117039Analysis of the C-V characteristics SiO2/GaN MOS capacitors
I.CORTES, E.AL ALAM, M.P.BESLAN, A.GOULLET, F.MORANCHO, A.CAZARRE, Y.CORDIER, K.ISOIRD
ISGE, IMN-CNRS, Nantes, CRHEA, N2IS
Manifestation avec acte : 7th Spanish Conference on Electron Devices (CDE 09), Santiago de Compostela (Espagne), 11-13 Février 2009, pp.279-280 , N° 08698
Diffusable
117040Optimisation of low voltage field plate LDMOS transistors
I.CORTES, F.MORANCHO, D.FLORES, S.HIDALGO, J.REBOLLO
ISGE, Université de Barcel
Manifestation avec acte : 7th Spanish Conference on Electron Devices (CDE 09), Santiago de Compostela (Espagne), 11-13 Février 2009, pp.31-32 , N° 08699
Diffusable
117041Analysis of field-plate LDMOS devices for RF applications
I.CORTES, D.FLORES, F.MORANCHO, S.HIDALGO, J.REBOLLO
ISGE, Université de Barcel
Rapport LAAS N°08735, Janvier 2009, 6p.
Diffusable
Plus d'informations
Mots-Clés / Keywords
Superjunction; 3-D RESURF LDMOS; Trench oxide; Field-plate;
Modeling and simulation of low power FLIMOSFETs taking into account the interelectrode capacitances
A.GALADI, F.MORANCHO, M.M.HASSANI
Univ. Cadi Ayyad, ISGE
Revue Scientifique : Journal of Active and Passive Electronic Devices, Vol.4, N°1-2, pp.91-105, Janvier 2009 , N° 08419
Diffusable
Plus d'informations
Mots-Clés / Keywords
SPICE-compatible model; Power VDMOS device; FLIMOSFET; Interelectrode capacitances;