14documents trouvés
Impurity impact ionisation avalanche in p-type diamond
V.MORTET, A.SOLTANI
IEMN, M2D
Revue Scientifique : Applied Physics Letters, Vol.99, N°20, pp.202105-1-202105-3, Novembre 2011 , N° 11563
Lien : http://hal.archives-ouvertes.fr/hal-00737919
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Abstract
Electrical conductivity of a highly boron doped chemical vapor deposited diamond thin film has been studied at different temperatures under high electric field conditions. Current-voltage characteristics have been measured using pulsed technique to reduce thermal effects. Experimental results evidence deep impurity impact ionization avalanche in p-type diamond up to room temperature.
Mobility degradation in 4H-SiC MOSFETs: comparison of electrical and structural investigations
V.MORTET, A.BELTRAN, E.BEDEL-PEREIRA, F.CRISTIANO, S.SCHAMM, C.STRENGER, V.HAUBLEIN, A.JBAUER
M2D, CEMES/CNRS, Fraunhofer Erlangen
Manifestation avec acte : ECS Meeting and Electrochemical Energy Summit, Boston (USA), 9-14 Octobre 2011, 1p. , N° 11564
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125595Comparative study of electrical and microstructural investigations of 4H-SiC MOSFETs
C.STRENGER, V.HAUBLEIN, T.ERLBACHER, A.JBAUER, H.RYSSEL, A.BELTRAN, S.SCHAMM-CHARDON, V.MORTET, E.BEDEL-PEREIRA, M.LEFEBVRE, F.CRISTIANO
Fraunhofer Erlangen, M2D, CEMES/CNRS
Manifestation sans acte : International Conference on Silicon Carbide and Related Materials (ICSCRM 2011), Cleveland (USA), 11-16 Septembre 2011, 4p. , N° 11561
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125590Nano-analytical and electrical characterization of 4H-SiC MOSFETs
A.BELTRAN, S.SCHAMM, V.MORTET, M.LEFEBVRE, E.BEDEL-PEREIRA, F.CRISTIANO, C.STRENGER, V.HAUBLEIN, A.JBAUER
M2D, CEMES/CNRS, Fraunhofer Erlangen
Manifestation avec acte : HeteroSiC-WASMPE 2011, Tours (France), 27-30 Juin 2011, 5p. , N° 11565
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