14documents trouvés
Compositional characterization of SiC-SiO2 interfaces in MOSFETs
A.BELTRAN, S.SCHAMM-CHARDON, V.MORTET, E.BEDEL-PEREIRA, F.CRISTIANO, C.STRENGER, A.JBAUER
CEMES/CNRS, MPN, Fraunhofer Erlangen
Manifestation avec acte : European Microscopy Conference (EMC 2012), Manchester (UK), 16-21 Septembre 2012, pp.367-368 , N° 12472
Lien : http://hal.archives-ouvertes.fr/hal-00720226
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Abstract
In the context of the MobiSiC project (Mobility engineering for SiC devices) we study 4H-SiC MOSFETs with the aim to get more insight in the C distribution and nature across the SiC-SiO2 interface and to correlate the results with electron mobility measurements. Investigations are based on the combination of structural and compositional analyses carried out by high resolution transmission electron microscopy (HRTEM) and spatially resolved EELS.
Hall effect characterization of 4H-SiC MOSFETs: influence of nitrogen gate implantation
V.MORTET, P.BRETON, E.BEDEL-PEREIRA, J.F.BOBO, C.STRENGER, A.JBAUER, F.CRISTIANO
MPN, CEMES/CNRS, Fraunhofer Erlangen
Manifestation avec acte : European Conference on Silicon Carbide & Related Materials (ECSCRM 2012), Saint Petersbourg (Russie), 2-6 Septembre 2012, 2p. , N° 12415
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128074Grain size tuning of nanocrystalline chemical vapor deposited diamond by continuous electrical bias growth: Experimental and theoretical study
V.MORTET, L.ZHANG, M.ECKERT, J.D'HAEN, A.SOLTANI, M.MOREAU, D.TROADEC, E.NEYTS, J.C.DE JAEGER, J.VERBEECK, A.BOGAERTS, G.VAN TENDELOO, K.HAENEN, P.WAGNER
MPN, EMAT, Antwerp, Hasselt University, IEMN, LASIR
Revue Scientifique : Physica Status Solidi (a), Vol.209, N°9, pp.1675-1682, Septembre 2012 , N° 12534
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128175BF3 PIII modeling: implantation, amorphisation and diffusion
Z.ESSA, F.CRISTIANO, Y.SPIEGEL, P.BOULENC, Y.QIU, M.QUILLEC, N.TALEB, A.BURENKOV, M.HACKENBERG, E.BEDEL-PEREIRA, V.MORTET, F.TORREGROSA, C.TAVERNIER
MPN, Ion Beam Services, ST Microelectronics, Probion Analysis, Fraunhofer Erlangen
Manifestation avec acte : International Conference on Ion Implantation Technology (IIT'2012), Valladolid (Espagne), 25-29 Juin 2012, 4p. , N° 12449
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127899Evidence of impurity impact ionization avalanche in p_type diamond
V.MORTET, A.SOLTANI, N.NOLHIER
MPN, IEMN, ESE
Manifestation sans acte : Workshop on Compound Semiconductor Devices and Integrated Circuits and Expert Evaluation & Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2012), Porquerolles (France), 30 Mai - 1 Juin 2012, 2p. , N° 12306
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127501Hall effect measurements of 4H-SiC MOSFET influence on nitrogen implantation
V.MORTET, P.BRETON, E.BEDEL-PEREIRA, F.CRISTIANO, A.BELTRAN, S.SCHAMM-CHARDON, C.STRENGER, V.HAUBLEIN, A.JBAUER
MPN, CEMES/CNRS, Fraunhofer Erlangen
Manifestation sans acte : Workshop on Compound Semiconductor Devices and Integrated Circuits and Expert Evaluation & Control of Compound Semiconductor Materials and Technologies (WOCSDICE-EXMATEC 2012), Porquerolles (France), 30 Mai 1 Juin 2012, 2p. , N° 12307
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127503Comparative study of electrical and microstructural investigations of 4H-SiC MOSFETs
C.STRENGER, V.HAUBLEIN, T.ERLBACHER, A.JBAUER, H.RYSSEL, A.BELTRAN, S.SCHAMM-CHARDON, V.MORTET, E.BEDEL-PEREIRA, M.LEFEBVRE, F.CRISTIANO
Fraunhofer Erlangen, M2D, CEMES/CNRS
Ouvrage (contribution) : Materials Science Forum. Silicon Carbide and Related Materials 2011, Vol.717-720, N°ISBN 978-3-03785-419-8, Mai 2012, pp.437-440 , N° 11561
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127720Hexagonal boron nitride nanowalls: physical vapour deposition, 2D/3D morphology and spectroscopic analysis
B.BEN MOUSSA, J.D'HAEN, C.BORSCHEL, J.BARJON, A.SOLTANI, V.MORTET, C.RONNING, M.D'OLIESLAEGER, H.G.BOYEN, K.HAENEN
Hasselt University, Friedrich-Schiller, GEMAC, IEMN, MPN
Revue Scientifique : Journal of Physics D: Applied Physics, Vol.45, N°13, 135302p., Avril 2012 , N° 12387
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127748Theoretical study of Lamb acoustic waves characteristics in a AlN/diamond composite membranes for Super High Frequency range operating devices
A.TALBI, A.SOLTANI, V.MORTET, J.C.GERBEDOEN, J.C.DE JAEGER, P.PERNOD
LEMAC, IEMN, MPN
Revue Scientifique : Diamond and Related Materials, Vol.22, pp.66-69, Février 2012 , N° 12389
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127750Nano-analytical and electrical characterization of 4H-SiC MOSFETs
A.BELTRAN, S.SCHAMM, V.MORTET, M.LEFEBVRE, E.BEDEL-PEREIRA, F.CRISTIANO, C.STRENGER, V.HAUBLEIN, A.JBAUER
M2D, CEMES/CNRS, Fraunhofer Erlangen
Revue Scientifique : Materials Science Forum, Vol.711, pp.134-138, Janvier 2012 , N° 11565
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