16documents trouvés
Technology and design for devices with charge as state variable
G.LARRIEU, M.GRAEF
MPN, Delft
Conférence invitée : NANO-TEC Workshop 2012 du 05 novembre au 07 novembre 2012, Barcelone (Espagne), Novembre 2012, 4p. , N° 12768
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129056Technology & design for nanoelectronics: the case of nanowire transistor
G.LARRIEU
MPN
Conférence invitée : European Solid-State Device Research Conference (ESSDERC 2012), Bordeaux (France), 17-21 Septembre 2012, 1p. (Résumé) , N° 12503
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128116Fabrication of semiconductor nanowire arrays for nanoelectronic applications
G.LARRIEU
MPN
Conférence invitée : E-MRS Fall Meeting, Varsovie (Pologne), 17-21 Septembre 2012, 1p. (Résumé) , N° 12504
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128118High resolution HSQ nanopillar arrays with low energy electron beam lithography
Y.GUERFI, F.CARCENAC, G.LARRIEU
MPN, TEAM
Manifestation avec acte : Toulouse (France), 1p. , N° 12569
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128308Vertical nanowire array for nanoelectronics
G.LARRIEU
MPN
Conférence invitée : International Conference on Nanosciences & Nanotechnologies (NN12), Thessaloniki (Grèce), 3-6 Juillet 2012, 1p. (Résumé) , N° 12326
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127571Understanding of the retarded oxidation effects in silicon nanostructures
C.KRZEMINSKI, X.L.HAN, G.LARRIEU
IEMN, MPN
Revue Scientifique : Applied Physics Letters, Vol.100, N°26, 263111p., Juin 2012 , N° 12187
Lien : http://hal.archives-ouvertes.fr/hal-00643617
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Plus d'informations
Abstract
A new understanding of the retarded or self-limited oxidation phenomenon observed during the oxidation of silicon nanostructures is proposed. The wet thermal oxidation of various silicon nanostructures such as nanobeams, concave/convex nanorings and nanowires exhibits an extremely different and complex behaviour. Such effects have been investigated by the mode\-lling of the mechanical stress generated during the oxidation process explaining the retarded or quasi self-limited regime. The proposed model describes the oxidation kinetics of silicon nanowires down to a few nanometers while predicting reasonable and physical stress levels at the Si/SiO$_{2}$ interface by correctly taking into account the relaxation effects in silicon oxide through plastic flow. Finally, this study gives more insight into the retarded or self-limiting oxidation phenomenon.
Carrier injection at silicide/silicon interfaces in nanowire based-nanocontacts
X.L.HAN, G.LARRIEU, E.DUBOIS, F.CRISTIANO
IEMN Villeneuve, MPN, IEMN
Revue Scientifique : Surface Science, Vol.606, N°9-10, pp.836-839, Mai 2012 , N° 12020
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126758Investigation of silicide/silicon interfaces in nanowire based-nanocontacts
G.LARRIEU, X.L.HAN, G.PATRIARCHE, F.CRISTIANO, Y.GUERFI, M.COLLET
MPN, IEMN Villeneuve, LPN
Manifestation avec acte : MRS Spring Meeting 2012, San Francisco (USA), 9-13 Avril 2012, 1p. (Résumé) , N° 12180
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126993A combination of capillary and dielectrophoresis-driven assembly methods for wafer scale integration of carbon nanotubes-based nanocarpets
F.SEICHEPINE, S.SALOMON, M.COLLET, S.GUILLON, L.NICU, G.LARRIEU, E.FLAHAUT, C.VIEU
NBS, MPN, CIRIMAT
Revue Scientifique : Nanotechnology, Vol.23, N°9, 095303p., Mars 2012 , N° 12088
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126722Low frequency noise in schottky barriers based nanoscale field-effect transistors
N.CLEMENT, G.LARRIEU, E.DUBOIS
IEMN, M2D
Revue Scientifique : IEEE Transactions on Electron Devices, Vol.59, N°1, pp.180-187, Janvier 2012, DOI: 10.1109/TED.2011.2169676 , N° 11557
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