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Extending ballistic graphene FET lumped element models to diffusive devices
G.VINCENZI, G.DELIGEORGIS, F.COCCETTI, M.DRAGOMAN, L.PIERANTONI, D.MENCARELLI, R.PLANA
IMT, UNIVPM, MINC
Revue Scientifique : Solid State Electronics, Vol.76, pp.8-12, Octobre 2012 , N° 12357
Lien : http://hal.archives-ouvertes.fr/hal-00718929
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Abstract
In this work, a modified, lumped element graphene field effect device model is presented. The model is based on the ''Top-of-the-barrier'' approach which is usually valid only for ballistic graphene nanotransistors. Proper modifications are introduced to extend the model's validity so that it accurately describes both ballistic and diffusive graphene devices. The model is compared to data already presented in the literature. It is shown that a good agreement is obtained for both nano-sized and large area graphene based channels. Accurate prediction of drain current and transconductance for both cases is obtained.