59documents trouvés
Wide-tunable low-field interdigitated barium strontium titanate capacitors
M.AL AHMAD, M.BRUNET, S.PAYAN, D.MICHAU, M.MAGLIONE, R.PLANA
MINC, ISGE, ICMCB-CNRS
Revue Scientifique : IEEE Microwave and Wireless Components Letters, Vol.17, N°11, pp.769-7771, Novembre 2007 , N° 07621
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Abstract
This letter reports low-field wide-tunable interdigitated barium strontium titanate (BST) capacitors. The capacitors consisting of BST thin film dielectric, silicon substrate, and gold metallization have been fabricated. The capacitance exhibits 0.2 pF at zero-bias and shows a tunability of 63% with an applied electric field of 1.4 V $/mu$m. This corresponds to a 3.5 $mu$m electrode gap width and a 5 V dc bias. Microwave measurements reveal a zero bias film quality of 50 around 30 GHz.
Mots-Clés / Keywords
BST; Capacitors; Thin films; Tunable circuit; Varactors;
Profile enhancement of high aspect ratio silicon pores made by DRIE with TMAH+IPA bath
M.BRUNET, M.DILHAN, D.BOURRIER, H.E.DKOTB MAHFOZ, A.BENAZZI, P.DUBREUIL, E.SCHEID
ISGE, TEAM, M2D
Manifestation avec acte : 18th Workshop on MicroMechanics Europe (MME 2007), Guimaraes (Portugal), 16-18 Septembre 2007, 4p. , N° 07513
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Mots-Clés / Keywords
High aspect ratio; DRIE; TMA; IPA; Scalloping;
Deep trench MOSFET structures study for a 1200 volts application
L.THEOLIER, K.ISOIRD, F.MORANCHO, J.ROIG GUITART, H.E.DKOTB MAHFOZ, M.BRUNET, P.DUBREUIL
ISGE, TEAM
Manifestation avec acte : 12th European Conference on Power Electronics and Applications (EPE 2007), Aalborg (Danemark), 2-5 Septembre 2007, 9p. , N° 07284
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Mots-Clés / Keywords
Power semiconductor devices; MOSFET; Super junction devices; Traction application;
Performance of 3D capacitors integrated on silicon for DC-DC converter applications
A.BENAZZI, M.BRUNET, P.DUBREUIL, N.MAURAN, L.BARY, J.P.LAUR, J.L.SANCHEZ, K.ISOIRD
ISGE, TEAM, 2I
Manifestation avec acte : 12th European Conference on Power Electronics and Applications (EPE 2007), Aalborg (France), 2-5 Septembre 2007, 9p. , N° 07511
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Mots-Clés / Keywords
Trench; Schottky contact; Phosphorus diffusion; DC-DC power converter; Deep reactive ion etching; Integrated capacitor;
Evolution of the classical functional integration towards a 3D heterogeneous functional integration
J.L.SANCHEZ, A.BOURENNANE, M.BREIL, P.AUSTIN, M.BRUNET, J.P.LAUR
ISGE
Conférence invitée : 14th International Conference Mixed Design of Integrated Circuits and Systems, Ciechocinek (Pologne), 21-23 Juin 2007, 11p. , N° 07344
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Abstract
This paper presents a brief overview of the monolithic integration in the field of power electronics. Emphasis is mainly put on the functional integration concept. The role that this mode of integration, according to its classical definition, played to enable the monolithic integration of the power device with auxiliary elements (mainly protections and supply) for the realization of new functions dedicated for medium power applications is highlighted. At that end, some of the recent realizations are described in order to showcase some of the potentialities of this mode of integration. Furthermore, to extend further the classical integration towards a 3D "heterogeneous" functional integration, an example that highlights the improvements that should be achieved at the devices level as well as at the devices environment level, for the development of new power integrated functions for ac applications, is discussed. The last part deals with the technology process evolution for the realization of the active devices as well as the passive elements. In this part, a flexible technological process and its importance in the development of more complex functions, implemented in 3D within the silicon die volume and at the surface, is described in more detail.
Mots-Clés / Keywords
Functional integration; 3D heterogeneous integration; Microfabrication techniques; Power integration;
Low-field high tunable interdigitated BST capacitor
M.AL AHMAD, G.LECLERC, M.BRUNET, N.MAURAN, S.PAYAN, D.MICHAU, M.MAGLIONE, R.PLANA
ISGE, MINC, 2I, ICMCB-CNRS
Manifestation avec acte : International Symposium on Integrated Ferroelectrics (ISIF 2007), Bordeaux (France), 8-12 Mai 2007, 2p. , N° 07617
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Mots-Clés / Keywords
Varactors; Capacitors; BST; Thin films; Tunable circuit;
Performances de condensateurs 3D intégrés sur silicium
M.BRUNET, A.BENAZZI, L.BARY, N.MAURAN, P.DUBREUIL, J.L.SANCHEZ
ISGE, 2I, TEAM
Manifestation sans acte : GDR Intégration des Systèmes de Puissance à 3 dimensions (ISP3D), Montpellier (France), 18-19 Octobre 2006, 4p. , N° 06870
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108918Development of fabrication techniques for high-density integrated MIM capacitors in power conversion equipment
M.BRUNET, P.DUBREUIL, E.SCHEID, J.L.SANCHEZ
ISGE, TEAM, M2D
Manifestation avec acte : 12th annual symposium on "MOEMS-MEMS 2006, San Jose (USA), 21-26 Janvier 2006, 10p. , N° 06044
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106357Etat d'avancement de l'intégration de composants passifs sur silicium au LAAS-CNRS
B.ESTIBALS, M.BRUNET, C.ALONSO, A.SALLES, P.ARTILLAN, A.CID-PASTOR, P.DUBREUIL, D.BOURRIER, M.DILHAN, T.EL MASTOULI, J.P.LAUR, J.L.SANCHEZ
CIP, TEAM
Manifestations avec acte à diffusion limitée : GDR Intégration des Systèmes de Puissance à 3 dimensions (ISP3D), Lyon (France), 20-21 Octobre 2005, 8p. , N° 05577
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