14documents trouvés
Golden nanofluidics: a generic micro-/nanofluidic platform with tunable surface chemistry
P.ABGRALL, P.JOSEPH, R.BURGER, S.CHARLOT, C.ESCRIBA, M.MAZAS, S.PINAUD, A.M.GUE, J.DUCREE
BDI, Dublin, N2IS, TEAM
Manifestation avec acte : European Conference on Microfluidics (MicroFlu 2010), Toulouse (France), 8-10 Décembre 2010, 7p. , N° 10789
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123407Confinement latéral par diaphragme d'oxyde de composants à émission verticale à base d'antimoine pour le moyen infrarouge
Y.LAAROUSSI, D.BELHARET, M.MAZAS, S.PINAUD, G.ALMUNEAU, D.SANCHEZ, L.CERUTTI
PH, TEAM, IES
Manifestation sans acte : Journées Nano Micro et Optoélectronique (JNMO 2010), Les Issambres (France), 28 Septembre - 1 Octobre 2010, 1p. (Résumé) , N° 10592
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122960Detection of label-free cancer biomarkers using nickel nanoislands and quartz crystal microbalance
A.MARTINEZ RIVAS, P.CHINESTRA, G.FAVRE, S.PINAUD, C.SEVERAC, J.C.FAYE, C.VIEU
NBS, INSERM Toulouse, TEAM
Revue Scientifique : International Journal of Nanomedicine, Vol.5, pp.661-668, Septembre 2010 , N° 08730
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Mots-Clés / Keywords
Cancer biomarkers; Nanobiosensors; PEG-silane; RhoA protein; Quartz Crystal Microbalance (QCM); Ni nanoislands;
Management of the electrical injection uniformity in broad-area top-emitting VCSELs
T.CAMPS, V.BARDINAL, E.HAVARD, M.CONDE, C.FONTAINE, G.ALMUNEAU, L.SALVAGNAC, S.PINAUD, J.B.DOUCET
PH, TEAM, N2IS
Revue Scientifique : European Physical Journal D, Vol.59, N°1, pp.53-57, Juillet 2010 , N° 10079
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122433High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry
L.JALABERT, P.DUBREUIL, F.CARCENAC, S.PINAUD, L.SALVAGNAC, H.GRANIER, C.FONTAINE
TEAM, PH
Revue Scientifique : Microelectronic Engineering, Vol.85, N°5-6, pp.1173-1178, Mai 2008 , N° 08182
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Abstract
We report an experimental study of GaAs etching by ICP-RIE based on Cl2:N2 chemistry. The influence of the RF source power, the chlorine dilution, the RF platen power, and the process pressure at several substrate temperatures are investigated. An optimized process is proposed to get routinely GaAs nanowires of 1 ¼m high and about 30 nm in diameter with a full top-down approach combining electron beam lithography and Ni lift-off steps.
Mots-Clés / Keywords
GaAs nanowires; Top-down; Plasma etching; ICP-RIE; Cl2/N2 chemistry;
Germanium resistors for RF MEMS based microsystems
K.GRENIER, C.BORDAS, S.PINAUD, L.SALVAGNAC, D.DUBUC
MINC, TEAM
Revue Scientifique : Microsystem Technologies, Vol.14, N°4-5, pp.601-606, Avril 2008 , N° 07601
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Abstract
This paper introduces the use of germanium as resistive material in RF MicroElectroMechanical (MEMS) devices. Integrated resistors are indeed highly required into RF MEMS components, in order to prevent any RF signal leakage in the bias lines and also to be compatible with ICs. Germanium material presents strong advantages compared to others. It is widely used in microtechnologies, notably as an important semi-conductor in SiGe transistors as well as sacrificial or structural layers and also mask layer in various processes (Si micromachining especially). But it also presents a very high resistivity value. This property is particularly interesting in the elaboration of integrated resistors for RF components, as it assures miniaturized resistors in total agreement with electromagnetic requirements. Its compatibility as resistive material in MEMS has been carried out. Its integration in an entire MEMS process has been fruitfully achieved and led to the successful demonstration and validation of integrated Ge resistors into serial RF MEMS variable capacitors or switches, without any RF perturbations.
Mots-Clés / Keywords
Germanium; RF MEMS; Integrated resistor; Millimeter waves; Process compatibility;
Effect of thermal annealing on the electrical properties of Indium Tin Oxide (ITO) contact on Be-doped GaAs for optoelectronic applications
E.HAVARD, T.CAMPS, V.BARDINAL, L.SALVAGNAC, C.ARMAND, C.FONTAINE, S.PINAUD
PH, N2IS, TEAM, INSAT
Revue Scientifique : Semiconductor Science and Technology, Vol.23, N°3, 035001p., Mars 2008 , N° 07748
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Abstract
The effects of thermal annealing on optically transparent electrodes of ITO (indium tin oxide) contact deposited on p-type Be-doped GaAs have been investigated by means of the transfer length method and secondary ion mass spectroscopy measurements. This study shows that the temperature that minimizes the specific contact resistance of ITO/GaAs (500 °C) greatly differs from the temperature that leads to a maximum conductivity of the ITO layer (600 °C) and from the values reported on ITO/GaAs in the literature. The oxygen diffusion in the semiconductor layer and its interaction with the beryllium dopant is pointed out to explain these differences.
ICP-RIE etching for high aspect ratio GaAs nanowires based on Cl2/N2 chemistry
L.JALABERT, P.DUBREUIL, F.CARCENAC, S.PINAUD, L.SALVAGNAC, O.GAUTHIER-LAFAYE, S.BONNEFONT
TEAM, PH
Manifestation avec acte : 33rd International Conference on Micro and Nano Engineering (MNE2007), Copenhague (Danemark), 23-26 Septembre 2007, 2p. , N° 07491
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Mots-Clés / Keywords
ICP-RIE; Plasma etching; Cl2/N2 chemistry; GaAs nano-columns; GaAs nanowires;
Germanium as an integrated resistor material in RF MEMS switches
K.GRENIER, C.BORDAS, S.PINAUD, L.SALVAGNAC, D.DUBUC
MINC, TEAM
Manifestation avec acte : SPIE Europe. Microtechnologies for the New Millenium 2007. Smart Sensors, Actuators and MEMS, Maspalomas (Espagne), 2-4 Mai 2007, 9p. , N° 07201
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Abstract
Germanium material is particularly suitable for high frequency applications, especially RF MEMS ones. It may be used not only as sacrificial layers, like previously published in the literature, but also into the elaboration of integrated resistors for serial RF MEMS switches. The compatibility of germanium as resistive material in MEMS has been carried out and led to the successful demonstration of integrated Ge resistors into serial RF MEMS variable capacitors, without any RF perturbations. The compatibility of this layer with the MEMS process has been studied and validated with variable MEMS capacitors employed as demonstrators.
Etude de couches sacrificielles polymères pour la réalisation de MEMS
V.CONEDERA, L.SALVAGNAC, J.C.MARROT, S.PINAUD, L.MAZENQ, J.B.DOUCET, N.FABRE
TEAM
Rapport LAAS N°07190, Mars 2007, 24p.
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